Recent Advances in Pure-Organic Host-Guest Room-Temperature Phosphorescence Systems Toward Bioimaging

Organic room-temperature phosphorescence(RTP)materials have garnered considerable attention in the fields of biosensing,optoelectronic devices,and anticounterfeiting because of their substantial Stokes shifts,tunable emission wavelengths,and prolonged lifetimes.These materials offer remarkable advantages for biological imaging applications by effectively reducing environmental autofluorescence and enhancing imaging resolution.Recently,host-guest systems have been employed as efficient approaches to fabricate pure-organic RTP materials for bioimaging,providing benefits such as controllable preparation and flexible modulation.Consequently,an increasing number of corresponding studies are being reported;however,a comprehensive systematic review is still lacking.Therefore,we summarize recent advances in the development of pureorganic RTP materials using host-guest systems with regard to bioimaging,including rigid matrices and sensitization.The challenge and potential of RTP for biological imaging are also proposed to promote the biomedical applications of organic RTP materials with excellent optical properties.

Room-Temperature Phosphorescence and Lifetime of Fossil Resins (Amber) from Dominican Republic, Mexico, Baltic Sea, Myanmar, and Fushun, China

Amber can emit room temperature phosphorescence(RTP)under the well-known 365 nm fluorescence ultraviolet light.This paper is devoted to the phosphorescence study of 20 pieces of amber materials from the Dominican Republic,Mexico,Baltic sea,Myanmar,and Fushun,China.The results show that amber from the same geographic origin has similar shape in phosphorescence spectra.However,the shape of the amber phosphorescence spectra varies depending on their different localities.Burmite(amber from Myanmar)and Fushun amber have a bright yellow phosphorescence with a long lifetime,while the Dominican and Mexican ones are weaker and last shorter.The irradiation of Baltic amber becomes faint or even inert.Phosphorescence spectral Gaussian fitting results suggest an emission maximum near 550 nm in most amber samples.Their phosphorescence lifetime,analyzed through the exponential function fitting,is up to 1 second in Burmite and Fushun samples,shorter in the Dominican and Mexican ones,about 0.230 s,and the shortest in Baltic amber,close to 0.151 s.These variations of phosphorescence lifetime and intensity are related to the relative geological ages of these amber.It indicated that the phosphorescence agent was probably formed during the long geological time.While the anomaly occurred in Baltic amber,the only one found in a sea secondary deposit form,it demonstrated that the terrestrial geological environment these amber preserved has prevented the phosphorescence agent to be deactivated.

Enhancement of room-temperature magnetoresistance in La_(0.5)Sm_(0.2)Sr_(0.3)MnO_3/(Ag_2O)_(x/2)

La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.

Room-Temperature Assembled MXene-Based Aerogels for High Mass-Loading Sodium-Ion Storage

Low-temperature assembly of MXene nanosheets into three-dimensional(3D) robust aerogels addresses the crucial stability concern of the nano-building blocks during the fabrication process,which is of key importance for transforming the fascinating properties at the nanoscale into the macroscopic scale for practical applications.Herein,suitable cross-linking agents(amino-propyltriethoxysilane,Mn^(2+),Fe^(2+),Zn^(2+),and Co^(2+)) as interfacial mediators to engineer the interlayer interactions are reported to realize the graphene oxide(GO)-assisted assembly of Ti_(3)C_(2)T_(x) MXene aerogel at room temperature.This elaborate aerogel construction not only suppresses the oxidation degradation of Ti_(3)C_(2)T_(x) but also generates porous aerogels with a high Ti_(3)C_(2)T_(x) content(87 wt%) and robustness,thereby guaranteeing the functional accessibility of Ti_(3)C_(2)T_(x) nanosheets and operational reliability as integrated functional materials.In combination with a further sulfur modification,the Ti_(3)C_(2)T_(x) aerogel electrode shows promising electrochemical performances as the freestanding anode for sodium-ion storage.Even at an ultrahigh loading mass of 12.3 mg cm^(-2),a pronounced areal capacity of 1.26 mAh cm^(-2) at a current density of 0.1 A g^(-1) has been achieved,which is of practical significance.This work conceptually suggests a new way to exert the utmost surface functionalities of MXenes in 3D monolithic form and can be an inspiring scaffold to promote the application of MXenes in different areas.

Understanding Sulfur Redox Mechanisms in Different Electrolytes for Room-Temperature Na-S Batteries

This work reports influence of two different electrolytes,carbonate ester and ether electrolytes,on the sulfur redox reactions in room-temperature Na-S batteries.Two sulfur cathodes with different S loading ratio and status are investigated.A sulfur-rich composite with most sulfur dispersed on the surface of a carbon host can realize a high loading ratio(72%S).In contrast,a confined sulfur sample can encapsulate S into the pores of the carbon host with a low loading ratio(44%S).In carbonate ester electrolyte,only the sulfur trapped in porous structures is active via‘solid-solid’behavior during cycling.The S cathode with high surface sulfur shows poor reversible capacity because of the severe side reactions between the surface polysulfides and the carbonate ester solvents.To improve the capacity of the sulfur-rich cathode,ether electrolyte with NaNO_(3) additive is explored to realize a‘solid-liquid’sulfur redox process and confine the shuttle effect of the dissolved polysulfides.As a result,the sulfur-rich cathode achieved high reversible capacity(483 mAh g^(−1)),corresponding to a specific energy of 362 Wh kg^(−1) after 200 cycles,shedding light on the use of ether electrolyte for high-loading sulfur cathode.

Room-temperature fast assembly of 3D macroscopically porous graphene frameworks for binder-free compact supercapacitors with high gravimetric and volumetric capacitances

Synthesis and applications of three-dimensional(3 D)porous graphene frameworks(GFs)have attracted extensive interest owing to their intriguing advantages of high specific surface area,enriched porosity,excellent electrical conductivity,exceptional compressibility and processability.However,it is still challenging for economically viable,fast and scalable assembly of 3 D GFs at room-temperature.Herein,we reported a one-step scalable strategy for fast self-assembly of graphene oxide into 3 D macroscopically porous GFs,with assistance of polyoxometalates(POM)as functional cross-linker and hydrazine hydrate as reductant at room-temperature.The resulting 3 D interconnected macroporous POM-GFs uniformly decorated with ultrasmall POM nanoclusters were directly processed into binder-/additive-free film compact electrodes(1.68 g cm^(-3))with highly aligned,layer-stacked structure and electrically conductivity(622 S m-1)for high-performance supercapacitors,showing an impressive gravimetric capacitance of205 F g-1,volumetric capacitance of 334 F cm^(-3) at 1 mV s^(-1),and remarkable cycling stability with capacitance retention of 83%after 10,000 cycles,outperforming the most reported GFs.Further,the solid-state supercapacitors offered excellent gravimetric capacitance of 157 F g-1 exceptionally volumetric capacitance of 115 F cm^(-3) at 2 mV s^(-1) based on single electrode,and volumetric energy density of2.6 mWh cm^(-3).Therefore,this work will open novel opportunities to room-temperature fast assembly of 3 D porous graphene architectures for high-energy-density supercapacitors.

Ethanol-driven Room-temperature Synthesis of Potential Green-emitting Phosphors： a Case Study of Tb^3＋-doped CaHPO4

A novel green nanophosphor CaHPO4：Tb3＋ was synthesized via a room-temperatureco-precipitation route driven by ethanol solvent. X-ray powder diffraction （XRD）, scanningelectron microscopy （SEM） and photoluminescence spectroscopy （PL） techniques were utilizedto characterize the structure, morphology and fluorescence performance of the obtained powders.The results demonstrated that the prepared samples were well crystallized with triclinic phaseCaHPO4 structure and particle-like morphology. Photoluminescence measurements indicated thatCaHPOa：Tb3＋ had a strong absorption peak at 370 nm and exhibited characteristic emissions withseveral sharp peaks corresponding to the transitions 5D4-7FJ （jr = 6-3） of Tb3＋. Moreover, theluminescence optimum concentration for CaHPO4：Tb3＋ was determined to be 11 mol%, whichmight be a promising green-emitting ohosohor for display applications.

Room-temperature conversion of ethane and the mechanism understanding over single iron atoms confined in graphene

The catalytic conversion of ethane to high value-added chemicals is significantly important for utilization of hydrocarbon resources.However, it is a great challenge due to the typically required high temperature(> 400 ℃) conditions.Herein, a highly active catalytic conversion process of ethane at room temperature(25 ℃) is reported on single iron atoms confined in graphene via the porphyrin-like N4-coordination structures.Combining with the operando time of flight mass spectrometer and density functional theory calculations, the reaction is identified as a radical mechanism, in which the C–H bonds of the same C atom are preferentially and sequentially activated, generating the value-added C2 chemicals, simultaneously avoiding the over-oxidation of the products to CO2.The in-situ formed O–FeN4–O structure at the single iron atom serves as the active center for the reaction and facilitates the formation of ethyl radicals.This work deepens the understanding of alkane C–H activation on the FeN4 center and provides the reference in development of efficient catalyst for selective oxidation of light alkane.

High room-temperature magnetization in Co-doped TiO_(2) nanoparticles promoted by vacuum annealing for different durations

To clarify the contribution of oxygen vacancies to room-temperature ferromagnetism(RTFM)in cobalt doped TiO_(2)(Co-TiO_(2)),and in order to obtain the high level of magnetization suitable for spintronic devices,in this work,Co-TiO_(2) nano-particles are prepared via the sol-gel route,followed by vacuum annealing for different durations,and the influence of vacu-um annealing duration on the structure and room-temperature magnetism of the compounds is examined.The results reveal that with an increase in annealing duration,the concentration of oxygen vacancies rises steadily,while the saturation magnetiza-tion(Ms)shows an initial gradual increase,followed by a sharp decline,and even disappearance.The maximum Ms is as high as 1.19 emu/g,which is promising with respect to the development of spintronic devices.Further analysis reveals that oxygen va-cancies,modulated by annealing duration,play a critical role in tuning room-temperature magnetism.An appropriate concentra-tion of oxygen vacancies is beneficial in terms of promoting RTFM in Co-TiO_(2).However,excessive oxygen vacancies will result in a negative impact on RTFM,due to antiferromagnetic superexchange interactions originating from nearest-neighbor Co^(2+)ions.

An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates

We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room temperature.The best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8 nV/Hz1/2 for noise equivalent power 0.57 pW/Hz1/2.The measured response time of the device is about 9 μs,demonstrating that the detector has a speed of>110 kHz.The achieved good performance,together with large detector size(acceptance area is 3μm×160μm),simple structure,easy manufacturing method,compatibility with mature silicon technology,and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.

Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors

Two-dimensional (2D) ferromagnetic semiconductors have been recognized as the most promising candidates for next-generation low-cost, high-performance and nano-scale spintronic applications such as spin field-effect transistors and quantum computation/communication. However, as one of the 125 important scientific issues raised by Science journal in 2005 that "is it possible to create magnetic semiconductors that work at room temperature?", how to achieve a feasible ferromagnetic semiconductor with high Curie temperature is still a long-standing challenge despite of tremendous efforts have been devoted in this field since 1960s. The recent discovery of 2D ferromagnetic semiconductors Cr2Ge2Te6 and CrI3 has evoked new research interests in 2D intrinsic ferromagnetic semiconductors. But the low Curie temperature (<45 K) of these materials is still badly hindering their industrial applications.

Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells

Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells （namely triple wells and five wells embedded） and bulk InCaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence （PL） intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47 As wells and InP barrier layers.

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.

Structure,room-temperature magnetic and optical properties of Mn-doped TiO_2 nano powders prepared by the sol-gel process

TiO2 nano powders with Mn concentration of 0 at%-12 at% were synthesized by the sol-gel process, and were annealed at 500 ℃ and 800 ℃ in air for 2 hrs. X-ray diffraction （XRD） measurements indicate that the Mn-TiO2 nano powders with Mn concentration of 1 at% and 2 at% annealed at 500 and 800 ℃ are of pure anatase and rutile, respectively. The scanning electron microscope （SEM） observations reveal that the crystal grain size increases with the annealing temperature, and the high resolution transmission electron microscopy （HRTEM） investigations further indicate that the samples are well crystallized, confirming that Mn has doped into the TiO2 crystal lattice effectively. The room temperature ferromagnetism, which could be explained within the scope of the bound magnetic polaron （BMP） theory, is detected in the Mn-TiO2 samples with Mn concentration of 2 at%, and the magnetization of the powders annealed at 500 ℃ is stronger than that of the sample treated at 800 ℃. The UV-VIS diffuse reflectance spectra results demonstrate that the absorption of the TiO2 powders could be enlarged by the enhanced trapped electron absorption caused by Mn doping.

Room-temperature ferromagnetism induced by Cu vacancies in Cu_x(Cu_2O)_(1-x) granular films

Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

Study on Room-Temperature Phosphorescence of 1-Bromonaphthalene in Media of Surfactant and β-Cyclodextrin

Sdrictants(S) induced room-ternperature phorphorescence(RTP) frorn l-bromonaplithalene(l-BrN) in aerated aqueous solutions of o-cyclodextha(β-CD) hasbeco mvestigated m detail. lt has been fotmd that the partial incIu5ion and coil ofhydIocarbon chain of edctans at the mouth of the 6-CD ca\4ty' is reSPoedle foTbright RTP

Ag3PO4 Microcrystals Synthesized by Room-Temperature Solid State Reaction:Enhanced Photocatalytic Activity and Photoelectronchemistry Performance

Ag3PO4 microcrystals with highly enhanced visible light photocatalytic activity are prepared by a facile and simple solid state reaction at room temperature. The composition, morphology and optical properties of the asprepared Ag3PO4 microcrystMs are characterized by x-ray diffraction, scanning electron microscopy and UV-vis diffuse reflectance spectra. The photocatalytie properties of Ag3PO4 are investigated by the degradation of both methylene blue and methyl orange dyes under visible light irradiation. The as-prepared Ag3PO4 microcrystals possess high photocatalytic oxygen production with the rate of 673μmolh-1g-1. Moreover, the as-prepared Ag3PO4 microcrystals show an enhanced photoelectrochemistry performance under irradiation of visible light.

Room-Temperature Synthesis of Fe-containing Mesoporous Silica

A Fe-containing mesoporous silica has been synthesized at room temperature using alkylamine as templating surfactant; XRD, IR, ESR and Si-29 MAS NMR spectra provided evidence of the presence of framework and non-framework iron(III) in Fe-HMS material.

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.