Nearest Object Priority Based Integrated Rough Surface Scattering Algorithm for 3D Indoor Propagation Prediction

Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.This algorithm is composed of a three dimensional(3D) ray tracing algorithm based on binary space partitioning(BSP) and a diffuse scattering algorithm based on Oren-Nayar's theory.Lack of accuracy and prohibitive time consumption are the main drawbacks of the existing ray tracing based propagation prediction models.To defy these shortcomings,the balanced BSP tree is used in the proposed algorithm to accelerate the ray tracing,while the nearest object priority technique(NOP) and in contact surface(ICS) is used to eliminate the repeated rayobject intersection tests.Therefore,the final criteria of this study are the time consumption as well as accuracy by predicting the field strength and the number of received signals.Using the proposed approaches,our algorithm becomes faster and more accurate than the existing algorithms.A detailed comparative study with existing algorithms shows that the proposed algorithm has at most 37.83%higher accuracy and 34.44%lower time consumption.Moreover,effects of NOP and ICS techniques and scattering factor on time and ray prediction accuracy are also presented.

The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current （/ON）, but has little effect on the hole mobility. The/ON is degraded by the surface roughness scattering in both strained and unstrained devices.

Electron mobility limited by surface and interface roughness scattering in Al_xGa_(1-x)N/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

Investigation of Simulating Radar Images Concerning the Multipath Scattering Effect

In the composed system of a target and rough surface, the electromagnetic scattering mechanism, especially the multipath scattering, is investigated. Using physical optics double bouncing algorithm, the multipath scattering model of the system has been established. Simulated by a wide-band radar signal and based on fractal rough surface, the artificial echo of the target has been obtained in virtue of the established multipath scattering model. By simulating to image the target in one dimension using the artificial echo, two kinds of range profiles are attained. It is found that one is from the target and the other is from the multipath scattering effect. Key words multipath scattering - radar imaging - rough surface scattering CLC number O 451 Foundation item: Supported by the Key Laboratory Foundation of National Defense Science and Technology (99JS93. 1. 2. JW1204)Biography: Yang Chun-hua(1978-), male, Ph. D candidate, research direction: radio wave propagation and wiresless communication.

Elastic wave scattering from rough free surfaces of solids

Elastic wave scattering by a rough free surface of solids is analyzed. The analysis is based on the concept of scattering amplitude (SA) and perturbation approximation. The SA method is very convenient for rough surface scattering problems. By solving the boundary equations, the first and the second order solutions of approximate scattering amplitude are obtained. The general solutions are used for, as an example, the wave scattering by rough surfaces with Gaussian distribution. The mean field and variance are given. Finally, an experiment is designed to verify the theoretical predications.

Quantum Analytical Theory for Giant Magnetoresistance in Magnetic Multilayered Cylindrical Systems

Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory to calculate the electronic conductivity and the giant magnetoresistance in magnetic multilayered cylindrical systems. It is found that in the limit of weakly scattering from impurities surface and interfaces, the total conductivity is given by a sum of conductivities of all the subbands and two spin-channels. For each subband and each spin-channel the scattering rate due to the impurities, surface and interfaces is added up.

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.