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Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction
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作者 陆红霞 董正超 付浩 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第2期680-684,共5页
Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-f... Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect. 展开更多
关键词 MAGNETORESISTANCE spin-flip effect rough-scattering
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