Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface

Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes （VLEDs）. The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.

Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching （ICP） surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency （IPCE） shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carder localization and carrier lifetime.

Surface micro/nanostructure evolution of Au-Ag alloy nanoplates： Synthesis, simulation, plasmonic photothermal and surface-enhanced Raman scattering applications

This study reports the controllable surface roughening of Au-Ag alloy nanoplates via the galvanic replacement reaction between single-crystalline triangular Ag nanoplates and HAuC14 in an aqueous medium. With a combination of experimental evidence and finite element method （FEM） simulations, improved electromagnetic field （E-field） enhancement around the surface-roughened Au- Ag nanoplates and tunable light absorption in the near-infrared （NIR） region （-800-1,400 nm） are achieved by the synergistic effects of the localized surface plasmon resonance （LSPR） from the maintained triangular shape, the controllable Au-Ag alloy composition, and the increased surface roughness. The NIR light extinction enables an active photothermal effect as well as a high photothermal conversion efficiency （78.5%）. The well-maintained triangular shape, surface- roughened evolutions of both micro- and nanostructures, and tunable NIR surface plasmon resonance effect enable potential applications of the Au-Ag alloy nanoplates in surface-enhanced Raman spectroscopic detection of biomolecules through 785-nm laser excitation.

Improved light extraction of wafer-bonded AlGalnP LEDs by surface roughening

By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature.The wafer was cut into 270×270μm2 chips and then packaged into TO-18 without epoxy resin.With 20-mA current injection,the light intensity and output power of LED-Ⅰwith surface roughening respectively reach 315 mcd and 4.622 mW,which was 1.7 times higher than that of LED-Ⅱwithout surface roughening.The enhancement of output power in LED-Ⅰcan be attributed to the pyramid-like surface,which not only reduces the total internal reflection at the semiconductor-air interface but also effectively guides more photons into the escape angle for emission from the LED device.