Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorpho...Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·n H2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2h, RuO2·n H2O electrode surface gains mass of2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly20% with voltage scan rate increasing from 5 to 250 m V/s.展开更多
RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction,...RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction, scanning electron microscopy,optical transmittance, and electrical resistivity methods. The results indicate that the films arehomogeneous and dense; the structure of the as-deposited films is amorphous and they crystallizeafter annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV,and the electrical resistivity of them is in the order of 10~5 Ω·cm.展开更多
The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a depos...The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.展开更多
Polymer LB films containing photofuntional groups were prepared by the copolymerization of N-dodecylacrylamide (DDA), which has an excellent property to form a stable monolayer and LB multilayerswith photofunctional m...Polymer LB films containing photofuntional groups were prepared by the copolymerization of N-dodecylacrylamide (DDA), which has an excellent property to form a stable monolayer and LB multilayerswith photofunctional monomers. Tris(2, 2'-bipyridine) ruthenium complex, Ru(bpy)_3^(2+), one of the most well-known redox-active sensitizer, was incorporated into the DDA copolymer. The photogalvanic effect based onthe photoinduced electron transfer using the ruthenium complex in the polymer LB monolayer was discussed.展开更多
Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditio...Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.展开更多
A photo-luminescent multilayer film based on Keggin-type polyoxometalate PMo 12O 3- 40 and transition metal complex tris(2,2-bipyridine) ruthenium [Ru(bpy) 3] 2+ was prepared by using layer-by-layer assembly(LBL). The...A photo-luminescent multilayer film based on Keggin-type polyoxometalate PMo 12O 3- 40 and transition metal complex tris(2,2-bipyridine) ruthenium [Ru(bpy) 3] 2+ was prepared by using layer-by-layer assembly(LBL). The formation of multilayer film was monitored by ultraviolet absorption spectra(UV). The absorption intensity of characteristic peaks increases with a four-layer cycle, indicating that the LBL assembly film grows linearly and reproducibly. The composition of the film was measured by X-ray photoelectron spectrum(XPS). The film exhibited photo-luminescence arising from π*-t 2g ligand-to-metal transition of Ru(bpy).展开更多
基金Project(S2013040015492)supported by the Natural Science Foundation of Guangdong Province,ChinaProject(2007AA03Z240)supported by Hi-tech Research and Development Program of China
文摘Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·n H2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2h, RuO2·n H2O electrode surface gains mass of2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly20% with voltage scan rate increasing from 5 to 250 m V/s.
基金This work is financially supported by the Tianjin Science and Technology Committee, China (No. F103004).
文摘RuS_2 thin films were prepared by the cost-effective chemicalmethod―successive ionic layer adsorption and reaction (SILAR). The structural, optical, andelectrical properties were investigated using X-ray diffraction, scanning electron microscopy,optical transmittance, and electrical resistivity methods. The results indicate that the films arehomogeneous and dense; the structure of the as-deposited films is amorphous and they crystallizeafter annealed at 500℃ for 30 min. The band gap of the as-deposited films is found to be 1.85 eV,and the electrical resistivity of them is in the order of 10~5 Ω·cm.
基金Supported by the National Natural Science Foundation in China under Grant No 60476010, the Science and Technology Committee of the Shanghai Municipality （04QMX1407）, the National Basic Research Programme of China under Grant No 2006CB302703, and the International Research Training Group （Materials and Concepts for Advanced Interconnects）.
文摘The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.
文摘Polymer LB films containing photofuntional groups were prepared by the copolymerization of N-dodecylacrylamide (DDA), which has an excellent property to form a stable monolayer and LB multilayerswith photofunctional monomers. Tris(2, 2'-bipyridine) ruthenium complex, Ru(bpy)_3^(2+), one of the most well-known redox-active sensitizer, was incorporated into the DDA copolymer. The photogalvanic effect based onthe photoinduced electron transfer using the ruthenium complex in the polymer LB monolayer was discussed.
文摘Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.
文摘A photo-luminescent multilayer film based on Keggin-type polyoxometalate PMo 12O 3- 40 and transition metal complex tris(2,2-bipyridine) ruthenium [Ru(bpy) 3] 2+ was prepared by using layer-by-layer assembly(LBL). The formation of multilayer film was monitored by ultraviolet absorption spectra(UV). The absorption intensity of characteristic peaks increases with a four-layer cycle, indicating that the LBL assembly film grows linearly and reproducibly. The composition of the film was measured by X-ray photoelectron spectrum(XPS). The film exhibited photo-luminescence arising from π*-t 2g ligand-to-metal transition of Ru(bpy).
