Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Filmwise Condensation Heat Transfer Enhancement with Dropwise and Filmwise Coexisting Condensation Surfaces

Six surfaces were prepared with defferent surface division patterns for the experimental investigationof steam condensation heat transfer characteristics for dropwise and filmwise coexisting(DFC)condensationsurfaces under atmospheric pressure Dropwise condensation(DWC)was promoted with an ultrathin polytetrafluoroethylene(PTFE)film,which was prepared by the dynamic ion-beam mixed implantation(DIMI)method.The results showed that the condensation phenomena at the intersection between the dropwise andfilmwise condensation regios were quite different for different relative positions of the dropwise and filmwisecondensation regions.The experimental results revealed that the condensation heat transfer characteristics werehighly influenced by the surface division number and the relative area ratio of the dropwise and filmwise conden-sation regions.The impact of thesc findings on heat transfer enhancement mechanism for condensation heattransfer is discussed in detail.

Research on the effect of Reynolds correlation in natural convection film condensation

Film condensation is a vital phenomenon in the nuclear engineering applications,such as the gas-steam pressurizer design,and heat removing on containment in the case of postulated accident.Reynolds number in film condensation can be calculated from either the mass relation or the energy relation,but few researches have distinguished the difference between them at present.This paper studies the effect of Reynolds correlation in the natural convection film condensation on the outer tube.The general forms of the heat transfer coefficient correlation of film condensation are developed in different flow regimes.By simultaneously solving a set of the heat transfer coefficient correlations with Re_(mass) and Re_(energy),the general expressions for Re_(mass) and Re_(energy) and the relation between the corresponding heat transfer coefficients are obtained.In the laminar and wavefree flow regime,Re_(mass) and Re_(energy) are equivalent,while in the laminar and wavy flow regime,Re_(mass) is much smaller than Re_(energy),and the deviation of the corresponding average heat transfer coefficients is about 30% at the maximum.In the turbulent flow regime,the relation of Re_(mass) and Re_(energy)is greatly influenced by Prandtl number.The relative deviation of their average heat transfer coefficients is the nonlinear function of Reynolds number and Prandtl number.Compared with experimental results,the heat transfer coefficient calculated from Re_(energy) is more accurate.

Flavor Amidst Plainness:An Examination of the Subjectivity of the“People’s Films”From the Perspective of Classical Aesthetics

The“People’s Films,”when examined from the perspective of classical aesthetics,present a unique visual style that creates artistic conceptions through sparse filming and deliver a scenery-based ideology through background shots,contributing to the overall aesthetic taste dominated by plainness.Chinese national aesthetic tastes,distinguished by implicitness,symbolism,and ethereality,have the magical power to present charming conceptions via plain and simple scenes,thus endowing the“People’s Films”with natural,plain,and harmonious frames that are unique to China.Behind the silent and plain scenes are representations of personal cultivation and essential values cherished by the Chinese people,which are achieved via the momentary presence and entirety of scenes photographed in the films,delivering an internal transcendence of people’s consciousness.

Investigation of Spontaneous Condensation of an Amino Acid Based Amphiphile on Cast Film by in situ Transmission FT-IR Spectroscopy

The spontaneous condensation of the amphiphilic N-（O,O-dihexadecyl）phosphorylalanine on the cast film was observed by in situ investigation of transmission infrared spectroscopy The particular orientation and ordered packing of the monomers within the multilayers of the cast film is concluded to attribute to the spontaneous condensation between the monomers.

Numerical Study of Thin Film Condensation in Forced Convection of Saturated Vapor on a Vertical Wall Covered with a Porous Material

The study of forced convection in a porous medium has aroused and still arouses today the interest of many scientists and industrialists. A considerable amount of work has been undertaken following the discovery of the phenomenon. Solving a standard problem of forced convection in porous media comes down to predicting the temperature and velocity fields as well as the intensity of the flow as a function of the various parameters of the problem. A numerical study of the condensation in forced convection of a pure and saturated vapor on a vertical wall covered with a porous material is presented. The transfers in the porous medium and the liquid film are described respectively by the Darcy-Brinkman model and the classical boundary layer equations. The dimensionless equations are solved by an implicit finite difference method and the iterative Gauss-Seidel method. Our study makes it possible to examine and highlight the role of parameters such as: the Froude number and the thickness of the porous layer on the speed and the temperature in the porous medium. Given the objective of our study, the presentation of velocity and temperature profiles is limited in the porous medium. The results show that the Froude number does not influence the thermal field. The temperature increases with an increase in the thickness of the dimensionless porous layer. The decrease in the Froude number leads to an increase in the hydrodynamic field.

Numerical Study of Thin Film Condensation in Forced Convection on an Inclined Wall Covered with a Porous Material

The present work presents a study of forced convection condensation of a laminar film of a pure and saturated vapor on a porous plate inclined to the vertical. The Darcy-Brinkman-Forchheimer model is used to write the flow in the porous medium, while the classical boundary layer equations have been exploited in the pure liquid and in the porous medium taking into account inertia and enthalpy convection terms. The problem has been solved numerically. The results are mainly presented in the form of velocity and temperature profiles. The obtained results have been compared with the numerical results of Chaynane et al. [1]. The effects of different influential parameters such as: inclination (ϕ), effective viscosity (ReK), and dimensionless thermal conductivity λ* on the flow and heat transfers are outlined.

Influence of Prandtl Number on Thin Film Condensation in Forced Convection in an Inclined Wall Covered with a Porous Material

The numerical study of thin film type condensation in forced convection of a saturated pure vapor in an inclined wall covered with a porous material is presented. The generalized Darcy-Brinkman-Forchheimer (DBF) model is used to describe the flow in the porous medium while the classical boundary layer equations have been exploited in the case of a pure liquid. The dimensionless equations are solved by an implicit finite difference method and the iterative Gauss-Seidel method. The objective of this study is to examine the influence of the Prandtl number on the hydrodynamic and thermal fields but also on the local Nusselt number and on the boundary layer thickness. For Pr ≤ 0.7 (low) the velocity and the longitudinal temperature increase with the Prandtl number. On the other hand, when Pr ≥ 2 (high) the Prandtl number no longer influences the velocity and the longitudinal temperature. The local Nusselt number increases as the Prandtl number increases and the thickness of the hydrodynamic boundary layer increases as the Prandtl number decreases.

化学水浴沉积制备高质量Zn(O,S)薄膜及其性能研究

为获得铜铟镓硒薄膜太阳电池中高质量Zn(O,S)无镉缓冲层薄膜,该研究阐述了柠檬酸三钠作为络合剂制备Zn(O,S)薄膜的成膜机理,系统性研究了该体系下各反应参数对薄膜化学水浴沉积的影响。研究表明,柠檬酸三钠的浓度值显著影响反应类型,异质反应更有利于生成高质量薄膜。同时,柠檬酸三钠与金属离子浓度的比值直接影响成膜质量和成膜速率,适合的pH溶液环境有助于提高Zn(O,S)薄膜沉积的质量。此外,通过工艺参数的优化,获得了电学性能接近传统CdS/CIGS太阳电池的Zn(O,S)/CIGS电池器件。

Depth Profile Study of Electroless Deposited Sb2S3 Thin Films Using XPS for Photovoltaic Applications

Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S3 thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.

Effects of substrate temperature and annealing on the anisotropic magnetoresistive property of NiFe films

Ni_(83)Fe_(17) films with a thickness of about 100 nm were deposited onthermal oxidized silicon substrates at ambient temperature, 240, 350, and 410℃ by DC magnetronsputtering. The deposition rate was about 0.11 nm/s. The as-deposited films were annealed at 450,550, and 650℃, respectively, in a vacuum lower than 3 x 10~3 Pa for 1 h. The Ni_(83)Fe_(17) filmsmainly grow with a crystalline orientation of [111] in the direction of the film growth. With theannealing temperature increasing, the [111] orientation enhances. For films deposited at all fourdifferent temperatures, the significant improvement on anisotropic magnetoresistance occurs at theannealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃,the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For filmsdeposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃annealing. The atomic force microscopy (AFM) observation shows a significant increase in grain sizeof the film deposited at 350℃ after 650℃ annealing. The decrease in resistivity and the increasein anisotropic magnetoresistance are caused by the decrease in point defects, the increase in grainsize, and the improvement in lattice structure integrity of the films.

Optical and Electrical Properties of ZnO/CdO Composite Thin Films Prepared by Pulse Laser Deposition

ZnO/CdO composite films with different CdO contents are obtained by pulse laser deposition technique. The structural, optical and electrical properties of the composite [liras are investigated by x-ray diffraction, photolu- minescence and electrical resistivity measurements, respectively. The results show that the UV emission is at a constant peak position in the photoluminescence spectra. Meanwhile, their electrical resistivity decreases to very low level approaching to the value of the CdO film, which can be explained by the Matthiessen composite rule for resistivity. The peculiarity of low resistivity and high transnlittance in the visible region enables these Rims suitable for optoelectronic device fabrication.

Preparation and Thermal Characterization of Diamond-Like Carbon Films

Diamond-like carbon （DLC） films are prepared on silicon substrates by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition. Raman spectroscopy indicates that the films have an amorphous structure and typical characteristics. The topographies of the films are presented by AFM images. Effective thermal conductivities of the films are measured using a nanosecond pulsed photothermal reflectance method. The results show that thermal conductivity is dominated by the microstructure of the films.

Effects of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si （100） substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700℃. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite （OZn）, interstitial oxygen （Oi）, interstitial zinc （Zni） and zinc vacancy （VZn^-）, which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.

Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.

Fabrication of ZnO-based thick film varistors with high potential gradient

ZnO-based thick film varistors have been fabricated by Y203 doping and low-temperature sintering, of which the sample with the best electrical properties has a high potential gradient value of 3159.4 V/mm. The effects of Y2O3 doping concentration and sintering temperature on the potential gradient of the samples were systematically investigated. The results show that the sample with the best electrical properties can be obtained by doping 0.08 mol% Y2O3 and sintering at 725℃. Under these optimum preparation conditions, the leakage current and the nonlinear coefficient are found to be 36.4 gA and 13.1. The sample with the best electrical properties has a grain size of 1.290um, a single grain boundary voltage of 4.08 V, a barrier height of 0.81 eV, and a depletion layer width of 10.2 nm, which are determined by thermionic emission. Small grain size with good grain boundary characteristics is beneficial to improve the electrical properties of varistors and promote the potential gradient.

Enhanced Optical Absorption of Amorphous Silicon Films by Ag Nanostructures

The optical absorption of amorphous silicon （α-Si） films is enhanced by silver （Ag） nanostructures deposited on the films. The reflection at the long wavelength side of localized plasmon polaritons （LPPs） resonance originated from Ag nanostructures is significantly decreased, i.e. the optical absorption is enhanced. The results show that the average reflection value of the amorphous silicon films in the wavelength range of 900-1200 nm could be decreased by 11.4%. Moreover, the reduction of the reflection is found to be mainly dependent on the size of the Ag nanostructures, which is related to the island sizes, i.e. the LPP＇s resonance peak position.

The Study of Condensation Processes in the Low-Temperature Short Heat Pipes with a Nozzle-Shaped Vapour Channel

The results of researches of condensation processes in the vapour channel similar to the Laval nozzle of short linear heat pipes are presented. Capacitive sensors are additionally installed in cooled top covers of the heat pipes, and electromagnetic pulses were supplied to them from the external generator. At heating the heat pipe evaporator, starting from a certain thermal power threshold value, electromagnetic pulses became modulated. It is related with the formations of the boiling process in the capillary-porous evaporator and large amount of vapour over it. Boiling process results in rapid increase of the pressure under which the average temperature of the evaporator occurs to be less than the boiling temperature of the working fluid under increased pressure. Considering condensation of excess vapour, this leads to repeated initiation and extinction of the boiling process in the evaporator, which reflects in pressure pulsations in the vapour channel. Pressure pulsations cause modulating effect on electromagnetic impulses. Pulsations frequencies are measured as well as their dependence from overheating of the evaporator. Using the capacitive sensors and a special electronic equipment we measured the local thickness of the working fluid at the condensing surface inside the heat pipes. Time-averaged values of the condensate film thickness are measured, depending on the heat load on the capillary-porous evaporator. The measurement error does not exceed 2 × 10–3 mm. It is demonstrated that the condensate film thickness lessens sharply with the increase of the heat load on the evaporator of a Laval-like low-temperature heat pipe, while the heat resistance of the film on the condensing surface reaches 60% of the total heat resistance of heat pipe with the capillary-porous evaporator.

Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films

Hafnium dioxide （HfO2） thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.