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Tianwan sets a national record for continuous and safe operation in first fuel cycle
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《Electricity》 2008年第2期40-,共1页
On May 1st, China National Nuclear Corporation(CNNC) announced in Beijing that unit 1 and unit 2 ofTianwan Nuclear Power Plant cooperatively constructedby China and Russia have completed in succession thefirst fuel cy... On May 1st, China National Nuclear Corporation(CNNC) announced in Beijing that unit 1 and unit 2 ofTianwan Nuclear Power Plant cooperatively constructedby China and Russia have completed in succession thefirst fuel cycle operation continuously and safely. It is 展开更多
关键词 Tianwan sets a national record for continuous and safe operation in first fuel cycle
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Safe operation of inverted siphon during ice period 被引量:2
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作者 付辉 杨开林 +2 位作者 郭新蕾 郭永鑫 王涛 《Journal of Hydrodynamics》 SCIE EI CSCD 2015年第2期204-209,共6页
Sixteen inverted siphons are in operation at the Beijing-Shijiazhuang section in the Middle Route of the South-to-North Water Diversion Project. Their safe operation is closely related to the safety and the water dive... Sixteen inverted siphons are in operation at the Beijing-Shijiazhuang section in the Middle Route of the South-to-North Water Diversion Project. Their safe operation is closely related to the safety and the water diversion efficiency of the whole project during an ice period. The ice accumulation process at the inlet of the inverted siphon is modeled under a real ice condition, and then the hydraulic conditions of the ice jam prevention are confirmed. According to the experimental results and the design sizes of the inverted siphons, the detailed safe water diversion discharge and the operational water level are studied. Analysis results of these inverted siphons provide references for the safe operation and the reasonable regulations during the ice period. 展开更多
关键词 inverted siphon ice period safe operation real ice experiment water diversion project
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Natural disaster warning system for safe operation of a high-speed railway 被引量:2
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作者 Hu Qizhou Fang Xin Bian Lishuang 《Transportation Safety and Environment》 EI 2021年第4期34-45,共12页
In this paper,the least square support vector machine(LSSVM)is used to study the safety of a high-speed railway.According to the principle of LSSVM regression prediction,the parameters of the LSSVM are optimized to mo... In this paper,the least square support vector machine(LSSVM)is used to study the safety of a high-speed railway.According to the principle of LSSVM regression prediction,the parameters of the LSSVM are optimized to model the natural disaster early warning of safe operation of a high-speed railway,and the management measures and methods of high-speed railway safety operation under natural disasters are given.The relevant statistical data of China’s high-speed railway are used for training and verification.The experimental results show that the LSSVM can well reflect the nonlinear relationship between the accident rate and the influencing factors,with high simulation accuracy and strong generalization ability,and can effectively predict the natural disasters in the safe operation of a high-speed railway.Moreover,the early warning system can improve the ability of safety operation evaluation and early warning of high-speed railway under natural disasters,realize the development goals of high-speed railway(safety,speed,economic,low-carbon and environmental protection)and provide a theoretical basis and technical support for improving the safety of a high-speed railway. 展开更多
关键词 high-speed railway safe operation natural disaster early warning system least square support vector machine(LSSVM)
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SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability
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作者 张金平 陈伟 +1 位作者 陈子珣 张波 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第11期627-634,共8页
A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combi... A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, respectively.The switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications. 展开更多
关键词 SiC trench MOSFET switching power loss figure of merit safe operating area
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To Raise Safe and Economical Operation Level on Scientific and Technical Progress Basis
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《Electricity》 1997年第1期20-22,共3页
关键词 To Raise safe and Economical operation Level on Scientific and Technical Progress Basis
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Review and Prospect of Research on Structural Health Monitoring Technology for Bridges
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作者 Guoyi Liu 《Journal of Architectural Research and Development》 2024年第3期156-161,共6页
As a crucial infrastructure in the transport system,the safe operation of bridges is directly related to all aspects of people’s daily lives.The development of bridge structural health monitoring technology and its a... As a crucial infrastructure in the transport system,the safe operation of bridges is directly related to all aspects of people’s daily lives.The development of bridge structural health monitoring technology and its application play an important role in ensuring the safety and extending the service life of bridges.This paper carries out in-depth research and analysis on the related technology of bridge structural health monitoring.Firstly,the existing monitoring technologies at home and abroad are sorted out,and the advantages and problems of various methods are compared and analyzed,including nondestructive testing,stress measurement,vibration characteristic identification,and other commonly used monitoring technologies.Secondly,the key technologies and equipment in the bridge health monitoring system,such as sensor technology,data acquisition,and processing technology,are introduced in detail.Finally,the development trend in the field of bridge health monitoring is prospected from both theoretical research and technical application.In the future,with the development of emerging technologies such as big data,cloud computing,and the Internet of Things,it is expected that bridge health monitoring with intelligent and systematic features will be more widely applied to provide a stronger guarantee for the safe and efficient operation of bridges. 展开更多
关键词 Bridge structural health monitoring safe operation Monitoring technology
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Research on Operation of UAVs in Non-isolated Airspace 被引量:7
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作者 Zhaoyue Zhang Jing Zhang +1 位作者 Peng Wang Lei Chen 《Computers, Materials & Continua》 SCIE EI 2018年第10期151-166,共16页
In order to explore the safe operation of UAVs in non-segregated airspace,a collision risk model for cylindrical UAVs based on conflict areas was constructed and the risk of conflict between manned and unmanned aerial... In order to explore the safe operation of UAVs in non-segregated airspace,a collision risk model for cylindrical UAVs based on conflict areas was constructed and the risk of conflict between manned and unmanned aerial vehicles was researched.According to the results of risk analysis,a strategy for solving the conflict of aircraft is proposed,and the risk assessment experiment of unmanned aerial vehicle(UAV)in non-isolated airspace conflict is carried out.The results show that under the experimental conditions,large unmanned aerial vehicles equipped with ADS-B,TCAS and other airborne sensing systems will indeed interfere with other aircraft in airspace when they enter non-isolated airspace.Especially when the number of aircraft in airspace is large,the automatic avoidance system of UAV will increase the avoidance time and trigger the safety alarm,but the safety level is still acceptable.This indicates that it is relatively safe for UAVs to enter non-isolated airspace under limited conditions.The results can be used as a reference for the safe operation of unmanned aerial vehicle(UAV)in non-isolated airspace. 展开更多
关键词 Unmanned aircraft vehicles non-isolated airspace safe operation risk assessment
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On-State Breakdown Model for High Voltage RESURF LDMOS 被引量:2
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作者 方健 易坤 +1 位作者 李肇基 张波 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第3期436-442,共7页
An analytical breakdown model under on state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result... An analytical breakdown model under on state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n drift in LDMOS at on state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on state accurately and it also directs high voltage LDMOS design. 展开更多
关键词 LDMOS safe operating area breakdown voltage
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An Apparatus Design for the Vehicle Control Scheme in Personal Rapid Transit System
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作者 Jun-Ho Lee 《Journal of Mechanics Engineering and Automation》 2013年第5期325-333,共9页
A new transportation technology known as personal rapid transit (PRT) is being developed by multiple different companies around the world, and one system is under commercial operations in the United Kingdom. Each de... A new transportation technology known as personal rapid transit (PRT) is being developed by multiple different companies around the world, and one system is under commercial operations in the United Kingdom. Each design is different, but they all share a need to operate many automated transit vehicles at very close headways. Safe operation will require a level of control an order of magnitude above any current transit system. As a result, new techniques will be needed for the development and testing of the mechanical and control systems. In this paper an apparatus for developing and testing a PRT vehicle control scheme is demonstrated. This system is composed of independent modules that represent virtual vehicles, a central control system, a man-machine interface and a monitoring device. It can be used to implement and to evaluate the designed vehicle control algorithm. The vehicle control algorithm is designed and simulated in a combined simulation platform that consists of Matlab/Simulink and Labview Simulation Interface Toolkit. Simple operational scenarios are proposed for the testing of the proposed vehicle control apparatus. 展开更多
关键词 Personal rapid transit vehicle control scheme virtual vehicles safe operation headway.
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Homing Strategy for a 4RRR Parallel Kinematic Machine 被引量:2
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作者 WANG Liping LIU Dawei LI Tiemin 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2011年第3期399-405,共7页
Returning home is the most important process of a parallel kinematic machine (PKM) with incremental encoders.Currently,most corresponding articles focus on the accuracy of homing process,and there lacks the investig... Returning home is the most important process of a parallel kinematic machine (PKM) with incremental encoders.Currently,most corresponding articles focus on the accuracy of homing process,and there lacks the investigation of the operation's safety.For a 4RRR PKM,all servoaxes would be independently driven to their zero positions at the same time based on the traditional homing mode,and that can bring serious interfere of the kinematic chains.This paper systemically investigates this 4RRR PKM's safety of homing process.A homing strategy usually contains three parts which are the home switches' locations,the platform's initial moving space,and each links' homing direction,and all of them can influence the safety of homing operation.For the purpose of evaluating and describing the safety of the homing strategy,some important parameters are introduced as follows:Safely homing ratio (SHR) is used to evaluate the probability of a machine's successfully returning home from an initial moving space;Synchronal rotational angle (SRA) is the four links' largest synchronal rotational angle with given directions from a given pose.Whether a machine can safely return home from a given pose can be judged by comparing the SRA with all four home switches' mounting angles.By meshing the initial moving space and checking the safeties of returning home from all the initial poses on the nodes,the SHR of this initial moving space can be calculate.For the sake of convenience,the platform's initial moving space should be as large as possible,and in this 4RRR PKM,a square zone in the center of the workspace with a giving initial rotation range is selected as the platform's initial moving space.The forward direction is selected as each link's homing direction according to custom,and the platform's initial rotational angle is selected as larger than 0° based on this 4RRR PKM's kinematic characteristics.The platform's initial moving space can be defined only by the side length of the initial moving square.By setting a probable searching step and calculating the SHR of the initial moving square,an optimal procedure of searching for the largest side length of the platform's initial moving square is proposed.The homing strategy proposed is based on a systemic research on the safety of homing process for PKM,and the two new indexes SHR and SRA can clearly describe the safety of homing operation.The homing operation based on this strategy is fast and safe,and the method can also be used in other PKMs with the situation of serious components' interference. 展开更多
关键词 homing strategy safely homing operation maximum safely homing space redundant parallel kinematic machine
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An LDMOS with large SOA and low specific on-resistance
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作者 杜文芳 吕信江 陈星弼 《Journal of Semiconductors》 EI CAS CSCD 2016年第5期52-55,共4页
An LDMOS with nearly rectangular-shape safe operation area (SOA) and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region... An LDMOS with nearly rectangular-shape safe operation area (SOA) and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be low- ered down to 74.7 m^2.cm2 for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ion- ization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V6s is obtained and snap-back is suppressed as well. 展开更多
关键词 LDMOS safe operation area (SOA) snap-back split gate
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Kirk effect and suppression for 20 V planar active-gap LDMOS 被引量:1
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作者 聂卫东 易法友 于宗光 《Journal of Semiconductors》 EI CAS CSCD 2013年第5期59-63,共5页
For 20 V planar active-gap lateral double-diffused MOSFET (LDMOS), the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the ... For 20 V planar active-gap lateral double-diffused MOSFET (LDMOS), the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the conventional single channel. Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence of the n-drift concentration and the n-drift length Ldrift (the drain n+ diffusion to gate spacing) which are related to the Kirk effect is discussed. The trade-offs between Rdson.Area, breakdown voltage Vbd and the electrical safe operating area (e-SOA) performance of LDMOS are considered also. Finally the proposed planar active-gap LDMOS devices with varied values of Ldria are experimentally demonstrated. The experimental results show that the Kirk effect can be greatly suppressed with slight increase in the Rdson.Area parameter. 展开更多
关键词 planar active-gap LDMOS sectional channel n-drift length L-drift n-drift concentration Kirk effect electrical safe operating area
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Energy capability enhancement for isolated extended drain NMOS transistors
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作者 Nie Weidong Wu Jin +1 位作者 Ma Xiaohui Yu Zongguang 《Journal of Semiconductors》 EI CAS CSCD 2012年第2期45-50,共6页
Isolated extended drain NMOS(EDNMOS) transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect... Isolated extended drain NMOS(EDNMOS) transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial(p-epi) thickness,n-type buried layer(BLN) and nwell doping distribution,the peak electric field is decreased by 30%and the peak hole current is decreased by 60%,which obviously suppress the parasitic NPN effect.Measured I-V characteristics and transmission line pulsing(TLP) results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V Vgs is applied and the energy capability is improved by about 30%,while the on-state resistance remains unchanged. 展开更多
关键词 energy capability isolated extended drain NMOS transistors safe operating area parasitic NPN TLP on-state breakdown voltage
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