A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the ...A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved.展开更多
In the past few decades,circuits based on gallium nitride high elec-tron mobility transistor(GaN HEMT)have demonstrated exceptional potential in a wide range of high-power and high-frequency applica-tions,such as the ...In the past few decades,circuits based on gallium nitride high elec-tron mobility transistor(GaN HEMT)have demonstrated exceptional potential in a wide range of high-power and high-frequency applica-tions,such as the new generation mobile communications,object de-tection and consumer electronics,etc.As a critical intermediary be-tween GaN HEMT devices and circuit-level applications,GaN HEMT large-signal models play a pivotal role in the design,application and development of GaN HEMT devices and circuits.This review pro-vides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades.Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model was of-fered,including large-signal measurement setups,classical formula-tion methods,model classification and non-ideal effects,etc.In order to better serve follow-up researches,this review also explored poten-tial future directions for the development of GaN HEMT large-signal modeling.展开更多
A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurat...A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.展开更多
A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20 (MM20) is presented. The weak avalanche effect and the power dissipation caused by self-heating are described. The RF paras...A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20 (MM20) is presented. The weak avalanche effect and the power dissipation caused by self-heating are described. The RF parasitic elements are extracted directly from measured S-parameters with analytical methods. Their final values can be obtained quickly and accurately through the necessary optimization. The model is validated in DC,AC small-signal,and large-signal analyses for an RF-SOI LDMOS of 20-fingers (channel mask length, L = 1μm,finger width, W = 50μm) gate with high resistivity substrate and body-contact. Excellent agreement is achieved between simulated and measured results for DC, S- parameters (10MHz-0.01GHz), and power characteristics, which shows our model is accurate and reliable. MM20 is improved for RF-SOI LDMOS large-signal applications. This model has been implemented in Verilog-A using the ADS circuit simulator (hpeesofsim).展开更多
Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics ...Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects:the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency(SRF) for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.展开更多
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device ...A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.展开更多
A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic funct...A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic function approach,including a relevant equation to reduce the deviation caused by approximation.The model consists of both series and shunt lumped elements and accounts for high-order parasitic effects.The equivalent circuit model is derived and verified to recover the frequency-dependent parameters at a range from direct current to 50 GHz accurately.The scalability of the model is proved by comparing simulated and measured scattering parameters with the method of cascade,attaining excellent results based on samples made from CMOS 0.13 and 0.18 μm process.展开更多
We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of ...We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.展开更多
A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This...A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.展开更多
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external p...A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.展开更多
An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of ...An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm^2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.展开更多
A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC's ...A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC's 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters (50 MHz-40 GHz), and power characteristics, which shows that our model is accurate and reliable.展开更多
A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The ana...A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.展开更多
文摘A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved.
基金supported in part by the National Research Founda-tion (NRF) of Singapore under Grant NRF-CRP17-2017-08.
文摘In the past few decades,circuits based on gallium nitride high elec-tron mobility transistor(GaN HEMT)have demonstrated exceptional potential in a wide range of high-power and high-frequency applica-tions,such as the new generation mobile communications,object de-tection and consumer electronics,etc.As a critical intermediary be-tween GaN HEMT devices and circuit-level applications,GaN HEMT large-signal models play a pivotal role in the design,application and development of GaN HEMT devices and circuits.This review pro-vides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades.Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model was of-fered,including large-signal measurement setups,classical formula-tion methods,model classification and non-ideal effects,etc.In order to better serve follow-up researches,this review also explored poten-tial future directions for the development of GaN HEMT large-signal modeling.
基金Project supported by the National Basic Research Program of China (Grant No. 2010CB327502)
文摘A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.
文摘A novel large-signal equivalent circuit model of RF-SOI LDMOS based on Philips MOS Model 20 (MM20) is presented. The weak avalanche effect and the power dissipation caused by self-heating are described. The RF parasitic elements are extracted directly from measured S-parameters with analytical methods. Their final values can be obtained quickly and accurately through the necessary optimization. The model is validated in DC,AC small-signal,and large-signal analyses for an RF-SOI LDMOS of 20-fingers (channel mask length, L = 1μm,finger width, W = 50μm) gate with high resistivity substrate and body-contact. Excellent agreement is achieved between simulated and measured results for DC, S- parameters (10MHz-0.01GHz), and power characteristics, which shows our model is accurate and reliable. MM20 is improved for RF-SOI LDMOS large-signal applications. This model has been implemented in Verilog-A using the ADS circuit simulator (hpeesofsim).
基金supported by the Scientific and Technologic Cooperation Foundation of Yangtze River Delta Area of China(Nos.2008C16017, 08515810103)the Major Science and Technology Project of China(No.2009ZX02303-05).
文摘Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects:the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable models.The two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency(SRF) for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M RF CMOS technology.
文摘A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.
基金supported by National Natural Science Foundation of China(No.61674036)
文摘A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic function approach,including a relevant equation to reduce the deviation caused by approximation.The model consists of both series and shunt lumped elements and accounts for high-order parasitic effects.The equivalent circuit model is derived and verified to recover the frequency-dependent parameters at a range from direct current to 50 GHz accurately.The scalability of the model is proved by comparing simulated and measured scattering parameters with the method of cascade,attaining excellent results based on samples made from CMOS 0.13 and 0.18 μm process.
基金Ministry of Trade,Industry and Energy(MOTIE)(10065666)Yonsei University(Research Scholarship Grants)IC Design Education Center(IDEC)
文摘We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.
基金Project supported by the National Natural Science Foundation of China(No.60706002)the Scientific and Technologic Cooperation Foundation of the Yangtze River Delta Area of China(Nos.08515810103,2008C16017)
文摘A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.
基金Project supported by the National Natural Science Foundation of China(No.60806024)
文摘A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.
基金Project supported by the Open Research Program of State Key Laboratory of Millimeter Waves,Southeast University,China(No. K201002)
文摘An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm^2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.
基金supported by the National Natural Science Foundation of China(No.60706002)the Scientific and Technologic Cooperation Foundation of Yangtze River Delta Area of China(Nos.08515810103,2008C16017).
文摘A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC's 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters (50 MHz-40 GHz), and power characteristics, which shows that our model is accurate and reliable.
文摘A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.