Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage ...Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.展开更多
In this article, we present a new type of unified dynamic scaling property for synchronizability, which can describe the scaling relationship between dynamic synehronizability and four hybrid ratios under the unified ...In this article, we present a new type of unified dynamic scaling property for synchronizability, which can describe the scaling relationship between dynamic synehronizability and four hybrid ratios under the unified hybrid network theory framework （UHNTF）. Our theory results can not only be applied to judge and analyze dynamic synehronizability for most of complex networks associated with the UHNTF, but also we can flexibly adjust and design different hybrid ratios and sealing exponent to meet actual requirement for the dynanfic characteristics of the UHNTF.展开更多
基金Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003)the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800)+1 种基金the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121)the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000)
文摘Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
基金The work was supported by the National Natural Science Foundation of China （Grant Nos. 60874087 and 61174151）.
文摘In this article, we present a new type of unified dynamic scaling property for synchronizability, which can describe the scaling relationship between dynamic synehronizability and four hybrid ratios under the unified hybrid network theory framework （UHNTF）. Our theory results can not only be applied to judge and analyze dynamic synehronizability for most of complex networks associated with the UHNTF, but also we can flexibly adjust and design different hybrid ratios and sealing exponent to meet actual requirement for the dynanfic characteristics of the UHNTF.
