The thermodynadric parameters of main phase transition of 1,2-di-n-heptadecanoylphosphatidylcholine have been determined by differential scanning calorimetry. According to thedata obtained and the reliable data in lit...The thermodynadric parameters of main phase transition of 1,2-di-n-heptadecanoylphosphatidylcholine have been determined by differential scanning calorimetry. According to thedata obtained and the reliable data in literature, the homologous linear rules of tlie thermody-nandc parameters of main phase transitions have been obtained by linear regression analysis. Thelinear regression equations of the thermodynamic parameters obtained can fit the experimentaldata better than the equations from Small(1986) and Marsh(1991).展开更多
Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea- surements reveal all peaks belong to the purely ...Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea- surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor- phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper- ties of Gal-xHoxN （x=0.0, 0.05） films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films （i.e. GaN） exhibited diamagnetic behavior, while the Ho-doped （Gao.95Hoo.05N） film exhibited a ferro- magnetic behavior.展开更多
文摘The thermodynadric parameters of main phase transition of 1,2-di-n-heptadecanoylphosphatidylcholine have been determined by differential scanning calorimetry. According to thedata obtained and the reliable data in literature, the homologous linear rules of tlie thermody-nandc parameters of main phase transitions have been obtained by linear regression analysis. Thelinear regression equations of the thermodynamic parameters obtained can fit the experimentaldata better than the equations from Small(1986) and Marsh(1991).
文摘Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea- surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor- phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper- ties of Gal-xHoxN （x=0.0, 0.05） films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films （i.e. GaN） exhibited diamagnetic behavior, while the Ho-doped （Gao.95Hoo.05N） film exhibited a ferro- magnetic behavior.
