This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,...This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,including scanning capacitance microscopy(SCM).The SCM measures the change in the C–V characteristic of the device as a result of placing a minute amount of charge on the floating gate,even in nano-meter scales.The proposed design only adds a simple processing step to the conventional FGT by adding an oppositely doped implanted layer to the substrate.This new structure was first analyzed theoretically and then a two-dimensional model was extracted to represent its C–V characteristic.Furthermore,this model was verified with a simulation.In addition,the C–V characteristics relevant to the SCM measurement of both conventional and the new designed FGT were compared to discuss the effectiveness of the added layer in masking the state of the transistor.The effect of change in doping concentration of the implanted layer on the C–V characteristics was also investigated.Finally,the feasibility of the proposed design was examined by comparing its I–V characteristics with the traditional FGT.展开更多
Dopant redistribution in a silicon nanowire （SiNW） p-n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom ...Dopant redistribution in a silicon nanowire （SiNW） p-n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom side and by air on the other sides. When a high level of current flows, the inner body temperature is found to increase enough to cause dopant diffusion and even to reach the silicon melting point due to Joule heating. This experimentally observed electrothermal behavior is also validated through numerical simulation. The conductivity change is dependent on the total power density and the change becomes permanent once the device suffers self-heating beyond a threshold point. Finally, the dopant redistribution is directly visualized using scanning capacitance microscopy for the first time.展开更多
文摘This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,including scanning capacitance microscopy(SCM).The SCM measures the change in the C–V characteristic of the device as a result of placing a minute amount of charge on the floating gate,even in nano-meter scales.The proposed design only adds a simple processing step to the conventional FGT by adding an oppositely doped implanted layer to the substrate.This new structure was first analyzed theoretically and then a two-dimensional model was extracted to represent its C–V characteristic.Furthermore,this model was verified with a simulation.In addition,the C–V characteristics relevant to the SCM measurement of both conventional and the new designed FGT were compared to discuss the effectiveness of the added layer in masking the state of the transistor.The effect of change in doping concentration of the implanted layer on the C–V characteristics was also investigated.Finally,the feasibility of the proposed design was examined by comparing its I–V characteristics with the traditional FGT.
文摘Dopant redistribution in a silicon nanowire （SiNW） p-n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom side and by air on the other sides. When a high level of current flows, the inner body temperature is found to increase enough to cause dopant diffusion and even to reach the silicon melting point due to Joule heating. This experimentally observed electrothermal behavior is also validated through numerical simulation. The conductivity change is dependent on the total power density and the change becomes permanent once the device suffers self-heating beyond a threshold point. Finally, the dopant redistribution is directly visualized using scanning capacitance microscopy for the first time.
