The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junct...The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.展开更多
Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exh...Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse speed.However,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection performance.Here,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 GHz.Furthermore,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared region.Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.展开更多
文摘The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.
基金This work was supported by the National Natural Science Foundation of China(Grants No.52022029,91850116,51772084,and U19A2090)the Sino-German Center for Research Promotion(Grant No.GZ1390)the Hunan Provincial Natural Science Foundation of China(Grants No.2018RS3051 and 2019XK2001)。
文摘Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse speed.However,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection performance.Here,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 GHz.Furthermore,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared region.Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.
