The batch cooling crystallization initiated from spontaneous nucleation for aqueous solution of potassium nitrate was studied. The concentration and transmittance data were acquired on line throughout the operation.Ba...The batch cooling crystallization initiated from spontaneous nucleation for aqueous solution of potassium nitrate was studied. The concentration and transmittance data were acquired on line throughout the operation.Based on solute mass transfer in both liquid and solid phases, a kinetic model was deduced by assuming that the late period of primary nucleation resembles the initial period of the secondary nucleation. Nucleation and crystal growth stages were identified. Kinetic parameters were estimated piecewise from online experimental data and compared with those in literature. The estimated kinetic parameters for stages without apparent primary nucleation agreed well with those in literature. Further, a simulated concentration curve was also drawn from the estimated kinetic parameters and it matched well with that in experiment.展开更多
碳化硅(SiC)电子器件的性能和成本受衬底质量影响,因此生长大直径高品质SiC单晶意义重大。物理气相传输(PVT)法是一种常用的生长方法,但其主要面临热场设计与气流控制问题。本工作对电阻加热PVT法生长150 mm SiC单晶完整过程开展数值仿...碳化硅(SiC)电子器件的性能和成本受衬底质量影响,因此生长大直径高品质SiC单晶意义重大。物理气相传输(PVT)法是一种常用的生长方法,但其主要面临热场设计与气流控制问题。本工作对电阻加热PVT法生长150 mm SiC单晶完整过程开展数值仿真研究,建立描述SiC原料热解和再结晶及其多孔结构演变、热-质输运、晶体形貌变化的数理模型,用数值模拟手段研究晶体生长、原料演变与热场变化等过程间的耦合关系。结果显示:原料区侧面高温导致气流不均匀,晶面呈“W”形,原料区底部高温得到均匀气流和微凸晶面;长晶界面通过径向温度变化调节气相组分平衡压力,使晶面生长成等温线形状;晶体生长速率与原料温度、剩余原料量呈正相关。模拟结果与已报道实验结果吻合,对优化生长SiC单晶有指导意义。展开更多
文摘The batch cooling crystallization initiated from spontaneous nucleation for aqueous solution of potassium nitrate was studied. The concentration and transmittance data were acquired on line throughout the operation.Based on solute mass transfer in both liquid and solid phases, a kinetic model was deduced by assuming that the late period of primary nucleation resembles the initial period of the secondary nucleation. Nucleation and crystal growth stages were identified. Kinetic parameters were estimated piecewise from online experimental data and compared with those in literature. The estimated kinetic parameters for stages without apparent primary nucleation agreed well with those in literature. Further, a simulated concentration curve was also drawn from the estimated kinetic parameters and it matched well with that in experiment.
文摘碳化硅(SiC)电子器件的性能和成本受衬底质量影响,因此生长大直径高品质SiC单晶意义重大。物理气相传输(PVT)法是一种常用的生长方法,但其主要面临热场设计与气流控制问题。本工作对电阻加热PVT法生长150 mm SiC单晶完整过程开展数值仿真研究,建立描述SiC原料热解和再结晶及其多孔结构演变、热-质输运、晶体形貌变化的数理模型,用数值模拟手段研究晶体生长、原料演变与热场变化等过程间的耦合关系。结果显示:原料区侧面高温导致气流不均匀,晶面呈“W”形,原料区底部高温得到均匀气流和微凸晶面;长晶界面通过径向温度变化调节气相组分平衡压力,使晶面生长成等温线形状;晶体生长速率与原料温度、剩余原料量呈正相关。模拟结果与已报道实验结果吻合,对优化生长SiC单晶有指导意义。
