DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and mea...DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.展开更多
Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. B...Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect（SHE） has a great influence on SOI,extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer.The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET;and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel.This offers a great help to SHE modeling and parameter extraction.展开更多
文摘DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.
基金supported by the State Key Development Program for Basic Research of China(No.2006CB3027-01)
文摘Deep submicron partially depleted silicon on insulator（PDSOI） MOSFETs with H-gate were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect（SHE） has a great influence on SOI,extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer.The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET;and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel.This offers a great help to SHE modeling and parameter extraction.
