In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-ste...In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61664001,61574070,and 61306148)the Application Research and Development Plan of Gansu Academy of Sciences,China(Grant Nos.2015JK-11 and 2015JK-01)
文摘In this paper, the self-compliance bipolar resistive switching characteristic of an HfO-based memory device with Ag/HfO/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.
