A large-area multi-fingerβ-Ga_(2)O_(3) MOSFET and its self-heating effect

The self-heating effect severely limits device performance and reliability.Although some studies have revealed the heat distribution ofβ-Ga_(2)O_(3) MOSFETs under biases,those devices all have small areas and have difficulty reflecting practical con-ditions.This work demonstrated a multi-fingerβ-Ga_(2)O_(3) MOSFET with a maximum drain current of 0.5 A.Electrical characteris-tics were measured,and the heat dissipation of the device was investigated through infrared images.The relationship between device temperature and time/bias is analyzed.

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.

A new physics-based self-heating effect model for 4H-SiC MESFETs

A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.

Numerical Simulation of the Self-Heating Effect Induced by Electron Beam Plasma in Atmosphere

For exploiting advantages of electron beam air plasma in some unusual applications, a Monte Carlo （MC） model coupled with heat transfer model is established to simulate the characteristics of electron beam air plasma by considering the self-heating effect. Based on the model, the electron beam induced temperature field and the related plasma properties are investigated. The results indicate that a nonuniform temperature field is formed in the electron beam plasma region and the average temperature is of the order of 600 K. Moreover, much larger volume pear-shaped electron beam plasma is produced in hot state rather than in cold state. The beam ranges can, with beam energies of 75 keV and 80 keV, exceed 1.0 m and 1.2 m in air at pressure of 100 torr, respectively. Finally, a well verified formula is obtained for calculating the range of high energy electron beam in atmosphere.

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.

Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.

Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure

An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N+ and O+ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.

Impact of ambient temperature on the self-heating effects in FinFETs

We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect（SHE） in 14 nm bulk n Fin FETs with ambient temperature（TA） from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/Si O_2 are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below：（i） not all input power（Q_（input） turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport;（ii） a higher TA leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages;（iii） SHE can lead to serious degradation in the carrier transport, which will increase when TA increases;（iv） the current degradation can be 8.9% when Vds = 0.7 V, Vgs = 1 V and TA = 400 K;（v） device thermal resistance（Rth） increases with increasing of TA, which is seriously impacted by the non-equilibrium transport. Hence, the impact of TA should be carefully considered when investigating SHE in nanoscale devices.

Numerical analysis of the self-heating effect in SGOI with a double step buried oxide

To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.

A novel interconnect optimal buffer insertion model considering the self-heating effect

Considering the self-heating effect, an accurate expression for the global interconnection resistance per unit length in terms of interconnection wire width and spacing is presented. Based on the proposed resistance model and according to the trade-off theory, a novel optimization analytical model of delay, power dissipation and bandwidth is derived. The proposed optimal model is verified and compared based on 90 nm, 65 nm and 40 nm CMOS technologies. It can be found that more optimum results can be easily obtained by the proposed model. This optimization model is more accurate and realistic than the conventional optimization models, and can be integrated into the global interconnection design ofnano-scale integrated circuits.

Investigation on step overcharge to self-heating behavior and mechanism analysis of lithium ion batteries

To obtain intrinsic overcharge boundary and investigate overcharge mechanism,here we propose an innovative method,the step overcharge test,to reduce the thermal crossover and distinguish the overcharge thermal behavior,including 5%state of charge(SOC)with small current overcharge and resting until the temperature equilibrium under adiabatic conditions.The intrinsic thermal response and the self-excitation behaviour are analysed through temperature and voltage changes during the step overcharge period.Experimental results show that the deintercalated state of the cathode is highly correlated to self-heating parasitic reactions.Before reaching the upper limit of Negative/Positive(N/P)ratio,the temperature changes little,the heat generation is significantly induced by the reversible heat(endothermic)and ohmic heat,which could balance each other.Following that the lithium metal is gradually deposited on the surface of the anode and reacts with electrolyte upon overcharge,inducing selfheating side reaction.However,this spontaneous thermal reaction could be“self-extinguished”.When the lithium in cathode is completely deintercalated,the boundary point of overcharge is about 4.7 V(~148%SOC,>40℃),and from this point,the self-heating behaviour could be continuously triggered until thermal runaway(TR)without additional overcharge.The whole static and spontaneous process lasts for 115 h and the side reaction heat is beyond 320,000 J.The continuous self-excitation behavior inside the battery is attributed to the interaction between the highly oxidized cathode and the solvent,which leads to the dissolution of metal ions.The dissolved metal ions destroy the SEI(solid electrolyte interphase)film on the surface of the deposited Li of anode,which induces the thermal reaction between lithium metal and the solvent.The interaction between cathode,the deposited Li of anode,and solvent promotes the temperature of the battery to rise slowly.When the temperature of the battery reaches more than 60℃,the reaction between lithium metal and solvent is accelerated.After the temperature rises rapidly to the melting point of the separator,it triggers the thermal runaway of the battery due to the short circuit of the battery.

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

Experimental study on the effect of water absorption level on rockburst occurrence of sandstone

To investigate the mechanism of rockburst prevention by spraying water onto the surrounding rocks,15 experiments are performed considering different water absorption levels on a single face.High-speed photography and acoustic emission(AE)system are used to monitor the rockburst process.The effect of water on sandstone rockburst and the prevention mechanism of water on sandstone rockburst are analyzed from the perspective of energy and failure mode.The results show that the higher the ab-sorption degree,the lower the intensity of the rockburst after absorbing water on single side of sand-stone.This is reflected in the fact that with the increase in the water absorption level,the ejection velocity of rockburst fragments is smaller,the depth of the rockburst pit is shallower,and the AE energy is smaller.Under the water absorption level of 100%,the magnitude of rockburst intensity changes from medium to slight.The prevention mechanism of water on sandstone rockburst is that water reduces the capacity of sandstone to store strain energy and accelerates the expansion of shear cracks,which is not conducive to the occurrence of plate cracking before rockburst,and destroys the conditions for rockburst incubation.

Evaluation of the intracellular lipid-lowering effect of polyphenols extract from highland barley in HepG2 cells

Active ingredients from highland barley have received considerable attention as natural products for developing treatments and dietary supplements against obesity.In practical application,the research of food combinations is more significant than a specific food component.This study investigated the lipid-lowering effect of highland barley polyphenols via lipase assay in vitro and HepG2 cells induced by oleic acid(OA).Five indexes,triglyceride(TG),total cholesterol(T-CHO),low density lipoprotein-cholesterol(LDL-C),aspartate aminotransferase(AST),and alanine aminotransferase(ALT),were used to evaluate the lipidlowering effect of highland barley extract.We also preliminary studied the lipid-lowering mechanism by Realtime fluorescent quantitative polymerase chain reaction(q PCR).The results indicated that highland barley extract contains many components with lipid-lowering effects,such as hyperoside and scoparone.In vitro,the lipase assay showed an 18.4%lipase inhibition rate when the additive contents of highland barley extract were 100μg/m L.The intracellular lipid-lowering effect of highland barley extract was examined using 0.25 mmol/L OA-induced HepG2 cells.The results showed that intracellular TG,LDL-C,and T-CHO content decreased by 34.4%,51.2%,and 18.4%,respectively.ALT and AST decreased by 51.6%and 20.7%compared with the untreated hyperlipidemic HepG2 cells.q PCR results showed that highland barley polyphenols could up-regulation the expression of lipid metabolism-related genes such as PPARγand Fabp4.

High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect

Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.

Engineering Strategies for Suppressing the Shuttle Effect in Lithium–Sulfur Batteries

Lithium–sulfur(Li–S)batteries are supposed to be one of the most potential next-generation batteries owing to their high theoretical capacity and low cost.Nevertheless,the shuttle effect of firm multi-step two-electron reaction between sulfur and lithium in liquid electrolyte makes the capacity much smaller than the theoretical value.Many methods were proposed for inhibiting the shuttle effect of polysulfide,improving corresponding redox kinetics and enhancing the integral performance of Li–S batteries.Here,we will comprehensively and systematically summarize the strategies for inhibiting the shuttle effect from all components of Li–S batteries.First,the electrochemical principles/mechanism and origin of the shuttle effect are described in detail.Moreover,the efficient strategies,including boosting the sulfur conversion rate of sulfur,confining sulfur or lithium polysulfides(LPS)within cathode host,confining LPS in the shield layer,and preventing LPS from contacting the anode,will be discussed to suppress the shuttle effect.Then,recent advances in inhibition of shuttle effect in cathode,electrolyte,separator,and anode with the aforementioned strategies have been summarized to direct the further design of efficient materials for Li–S batteries.Finally,we present prospects for inhibition of the LPS shuttle and potential development directions in Li–S batteries.

Carbon Emission Effects Driven by Evolution of Chinese Dietary Structure from 1987 to 2020

Exploring carbon emission effects based on the evolution of residents’ dietary structure to achieve the carbon neutrality goal and mitigate climate change is an important task.This study took China as the research object(data excluding Hong Kong,Macao and Taiwan) and used the carbon emission coefficient method to quantitatively measure the food carbon emissions from 1987–2020,then analyzed the carbon emission effects under the evolution of dietary structure.The results showed that during the study period,the Chinese dietary structure gradually changed to a high-carbon consumption pattern.The dietary structure of urban residents developed to a balanced one,while that of rural residents developed to a high-quality one.During the study period,the per capita food carbon emissions and total food consumption of Chinese showed an increasing trend.The per capita food carbon emissions of residents in urban and rural showed an overall upward trend.The total food carbon emissions in urban increased significantly,while that in rural increased first and then decreased.The influence of beef and mutton on carbon emissions is the highest in dietary structure.Compared with the balanced dietary pattern,the food carbon emissions of Chinese residents had not yet reached the peak,but were evolving to a high-carbon consumption pattern.

“Buckets effect”in the kinetics of electrocatalytic reactions

In this study,we systematically investigated the effect of proton concentration on the kinetics of the oxygen reduction reaction(ORR)on Pt(111)in acidic solutions.Experimental results demonstrate a rectangular hyperbolic relationship,i.e.,the ORR current excluding the effect of other variables increases with proton concentration and then tends to a constant value.We consider that this is caused by the limitation of ORR kinetics by the trace oxygen concentration in the solution,which determines the upper limit of ORR kinetics.A model of effective concentration is further proposed for rectangular hyperbolic relationships:when the reactant concentration is high enough to reach a critical saturation concentration,the effective reactant concentration will become a constant value.This could be due to the limited concentration of a certain reactant for reactions involving more than one reactant or the limited number of active sites available on the catalyst.Our study provides new insights into the kinetics of electrocatalytic reactions,and it is important for the proper evaluation of catalyst activity and the study of structureperformance relationships.

Understanding the Relationship Between Shrinking Cities and Land Prices:Spatial Pattern,Effectiveness,and Policy Implications

Urban shrinkage has emerged as a widespread phenomenon globally and has a significant impact on land,particularly in terms of land use and price.This study focuses on 2851 county-level cities in China in 2005–2018(excluding Hong Kong,Macao,Taiwan,and‘no data’areas in Qinhai-Tibet Plateau)as the fundamental units of analysis.By employing nighttime light(NTL)data to identify shrinking cities,the propensity score matching(PSM)model was used to quantitatively examine the impact of shrinking cities on land prices,and evaluate the magnitude of this influence.The findings demonstrate the following:1)there were 613 shrinking cities in China,with moderate shrinkage being the most prevalent and severe shrinkage being the least.2)Regional disparities are evident in the spatial distribution of shrinking cities,especially in areas with diverse terrain.3)The spatial pattern of land price exhibits a significant correlated to the economic and administrative levels.4)Shrinking cities significantly negatively impact on the overall land price(ATT=–0.1241,P<0.05).However,the extent of the effect varies significantly among different spatial regions.This study contributes novel insights into the investigation of land prices and shrinking cities,ultimately serving as a foundation for government efforts to promote the sustainable development of urban areas.

Cumulative effects of excess high-normal alanine aminotransferase levels in relation to new-onset metabolic dysfunction-associated fatty liver disease in China

BACKGROUND Within the normal range,elevated alanine aminotransferase(ALT)levels are associated with an increased risk of metabolic dysfunction-associated fatty liver disease(MAFLD).AIM To investigate the associations between repeated high-normal ALT measurements and the risk of new-onset MAFLD prospectively.METHODS A cohort of 3553 participants followed for four consecutive health examinations over 4 years was selected.The incidence rate,cumulative times,and equally and unequally weighted cumulative effects of excess high-normal ALT levels(ehALT)were measured.Cox proportional hazards regression was used to analyse the association between the cumulative effects of ehALT and the risk of new-onset MAFLD.RESULTS A total of 83.13%of participants with MAFLD had normal ALT levels.The incidence rate of MAFLD showed a linear increasing trend in the cumulative ehALT group.Compared with those in the low-normal ALT group,the multivariate adjusted hazard ratios of the equally and unequally weighted cumulative effects of ehALT were 1.651[95%confidence interval(CI):1.199-2.273]and 1.535(95%CI:1.119-2.106)in the third quartile and 1.616(95%CI:1.162-2.246)and 1.580(95%CI:1.155-2.162)in the fourth quartile,respectively.CONCLUSION Most participants with MAFLD had normal ALT levels.Long-term high-normal ALT levels were associated with a cumulative increased risk of new-onset MAFLD.