This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor （HEMT） and AlAs/GaAs resonant tunnelling diode （RTD） are epitaxially grown by molecular beam epitaxy （MBE） in turn on a G...This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor （HEMT） and AlAs/GaAs resonant tunnelling diode （RTD） are epitaxially grown by molecular beam epitaxy （MBE） in turn on a GaAs substrate. An Alo.24Gao.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.展开更多
文摘This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor （HEMT） and AlAs/GaAs resonant tunnelling diode （RTD） are epitaxially grown by molecular beam epitaxy （MBE） in turn on a GaAs substrate. An Alo.24Gao.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.
