Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga_(2)O_(3)

Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

CuO–TiO_(2) based self-powered broad band photodetector

An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.

A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)film.The results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light.Moreover,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and voltages.At zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,respectively.In general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

Ultraviolet Photodetector based on Sr_(2)Nb_(3)O_(10) Perovskite Nanosheets

Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).

High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film

We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn_(5)Se_(8)/t-Se heterojunction

A type Ⅱ p–n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn_(5)Se_(8)(AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn_(5)Se_(8)/FePSe_(3)obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe_(3)thin film. Se, with a direct bandgap(around 1.7 eV), p-type conductivity, high electron mobility and high carrier density,is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn5Se8/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μA/W and 1.8×109Jones, respectively, which are around 9 and 4 times higher than those of the AgIn_(5)Se_(8)/FePSe_(3)heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn_(5)Se_(8)/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.

High-performance omnidirectional self-powered photodetector constructed by CsSnBr_(3)/ITO heterostructure film

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide（SiC）-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.

Performance optimization of self-powered visible photodetectors based on Cu2O/electrolyte heterojunctions

The performance of the self-powered photodetectors based on the Cu2O/electrolyte heterojunctions is optimized by adjusting morphology and structure of the Cu2O film.The Cu2O film with a deposition time of 2000 s possesses a largest current density of 559.6μA/cm2 under visible light illumination at zero bias,with a rising time of 5.2 ms and a recovering time of 9.0 ms.This optimized Cu2O film has a highest responsivity of about 25.8 mA/W for visible light,and a negligible responsivity for UV light.The high crystallinity and excellent charge transfer property are responsible for the improved photodetection performance.

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Ultraviolet(UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga_2O_3, TiO_2, and Ni O, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.

A Self-Powered Fast-Response Ultraviolet Detector of p–n Homojunction Assembled from Two ZnO-Based Nanowires

Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p–n homojunction ultraviolet detector(UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of -0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices.

Highly Efficient Organic Ultraviolet Photodetectors Based on Re(I) Complexes

High response organic ultraviolet photodetectors（UV-PDs） were demonstrated with 4,4＇,4”- tris[3-methyl-pheny（phenyl）amino]triphenylamine（m-MTDATA） and two Re（Ⅰ） complexes, （bathocuproine）- Re（CO）3CI（Re-BCP） and （bathophenanthroline）Re（CO）3Cl（Re-Bphen） to act as the electron donor and acceptor, re- spectively. UV-PDs have the configuration of indium tin oxide（ITO）/m-MTDATA（25 nm）/m-MTDATA：Re-complex （25-35 nm）/Re-complex（20 nm）/LiF（l nm）/Al（200 nm） with different blend layer thicknesses of 25, 30 and 35 nm. The optimized PD based on Re-Bphen offers a corrected-dark photocurrent up to 760μA/cm^2 at -10 V, corresponding to a response of 310 mA/W which is among the best values reported for organic UV-PDs. Excellent electron transport ability makes for such high photo-to-electron conversion.

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition

Self-powered photodetectors based on nanomaterials have attracted lots of attention for several years due to their various advantages.In this paper,we report a high performance Cu2O/ZnO self-powered photodetector fabricated by using electrochemical deposition.ZnO nanowires arrays grown on indium-tin-oxide glass are immersed in Cu2O film to construct type-Ⅱband structure.The Cu2O/ZnO photodetector exhibits a responsivity of 0.288 mA/W at 596 nm without bias.Compared with Cu2O photoconductive detector,the responsivity of the Cu2O/ZnO self-powered photodetector is enhanced by about two times at 2 V bias.It is attributed to the high power conversion efficiency and the efficient separation of the photogenerated electron-hole pairs,which are provided by the heterojunction.The outstanding comprehensive performances make the Cu2O film/ZnO nanowires self-powered photodetector have great potential applications.

Deep-ultraviolet and visible dual-band photodetectors by integrating Chlorin e6 with Ga_(2)O_(3)

Gallium oxide(Ga_(2)O_(3))is a promising material for deep-ultraviolet(DUV)detection.In this work,Chlorin e6(Ce6)has been integrated with Ga_(2)O_(3)to achieve a DUV and visible dual-band photodetector,which can achieve multiple target information and improve the recognition rate.The photodetector shows two separate response bands at 268 nm and 456 nm.The DUV response band has a responsivity of 9.63 A/W with a full width at half maximum(FWHM)of 54.5 nm;the visible response band has a responsivity of 1.17 A/W with an FWHM of 45.3 nm.This work may provide a simple way to design and fabricate photodetectors with dual-band response.

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

Nanostructure photodetectors,as the core component of optoelectronic devices,are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption devices.Herein,we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet photodetection.The radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias,indicating effective carriers’separation.And more,by integrating plasmonic effect,the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33×1012 Jones under 325 nm UV light irradiation.While the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V bias.The high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection process.This work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.

High-performance self-powered GaN/PEDOT:PSS hybrid heterojunction UV photodetector for optical communication

Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous challenge.Herein,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating method.Profited from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection repeatability.Functioned as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication system.These results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be realized.Herein,a wearable bidirectional self-powered PD based on detached(Al,Ga)N and(In,Ga)N nanowires has been proposed and demonstrated successfully.Arising from the photovoltage-competing dynamics across(Al,Ga)N and(In,Ga)N nanowire photoelectrodes,such PD can generate the positive(33.3 mA W−1)and negative(-0.019 mA W−1)photo-responsivity under ultraviolet(UV)and visible illumination,respectively,leading to the bidirectional photocurrent behavior.Thanks to the introduction of quasi solid-state hydrogel,the PD can work without the liquid-electrolyte,thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3.Furthermore,the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%,which is mainly attributed to the increased open circuit potential and reduced ion transport distance.As the GaN connecting segment is pretty thin,the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density.Therefore,both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times.With an excellent flexibility,this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices,e.g.,wearable intelligent sensors.