一种测量钢材残留应力的磁性各向异性方法

详细地论述了用磁性物理的方法测量残留应力的基本原理和方法.提出了利用磁性各向异性方法测量钢材残留应力.为了证明该方法的正确性,将用磁性各向异性的方法测量钢材的残留应力的数据与用应变片法测量钢材的残留应力的数据进行了比较,得到了令人满意的结果.该方法是一种全新的磁性应力测量方法,实验和理论都证明,这种磁性残留应力的测量方法具有其它方法所无法比拟的优势.它将会在工程技术上具有更加广泛的应用.

半导体应变片式传感器应用研究

应变片式传感器由于自身所具有的灵敏度、测量精度和可靠性高、动态响应快、抗干扰性强等特性，已在许多领域获得广泛应用。本文仅就实际使用的一个方面，做一系统介绍，供应用者进一步开发研究。

Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

A functionalized silicon nanowire field-effect transistor （SiNW FET） was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method with the ability to provide specific and reliable data. The device was designed and fabricated by indented ash trimming via shallow anisotropic etching. The approach is a simple and low-cost technique that is compatible with the current commercial semiconductor standard CMOS process without an expensive deep reactive ion etcher. Specific electric changes were observed for DNA sensing when the nanowire surface was modified with a complementary captured DNA probe and target DNA through an organic linker （--OCH2CH3） using organofunctional alkoxysilanes （3-aminopropyl） triethoxysilane （APTES）. With this surface modification, a single specific target molecule can be detected. The simplicity of the sensing domain makes it feasible to miniaturize it for the development of a cancer detection kit, facilitating its use in both clinical and non-clinical environments to allow non-expert interpretation. With its novel electric response and potential for mass commercial fabrication, this biosensor can be developed to become a portable/point of care biosensor for both field and diagnostic applications.

Evaluation of the accuracy and efficiency of the in-vivo dosimetry systems for routine cancer patient dose verification

Objective： This study aimed to evaluate of the accuracy and efficiency of the in-vivo dosimetry systems for routine cancer patient dose verification. Methods： In vivo dosimetry, using diodes and thermoluminescent dosimeters （TLD） is performed in many radiotherapy departments to verify the dose delivered during treatment. A total of 40 TLD divided into two batches （one of 20 and other of 20 TLD） were used. Different doses of Co6~ beam were delivered to the TLD chips at different depths. Diodes were irradiated at different depths in a （30 x 30 x 30） cm3 water slab phantom with various conditions of Field sizes, monitor units and SSDs. Results： The limitation of the in-vivo dosimetry technique is that dose can only be in system readout difficulty and type of readout （TLD system and diode） as the patient dose is directly measured. Several authors have investigated the measurements was 1.3%, with a standard deviation of 2.6%. Results were normally distributed around a mean as -0.39 and 0.34 respectively. After the evaluation of in vivo dosimetry brain case as an example, the mean doses for both eyes were 1.8%, with a standard deviation of 2.7%. These results are similar to studies conducted with diodes and TLD＇s. Conclusion： The diode is superior to TLD, since the diode measurements can be obtained on line and allows an immediate check. Other advantages of diodes include high sensitivity, good spatial resolution, and small size, simplicity of used.

Advanced Aircraft Power Electronics Systems- the impact of simulation, standards and wide band-gap devices

The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and traction applications,as well as grid related or charging systems,with the potential to provide paradigm shifts in performance and efficiency over Silicon devices in current use today.Despite these exciting developments,however,there are still many outstanding challenges for both researchers and industry to solve before WBG technology becomes pervasive.In this paper we will explore some of these challenges and highlight the strengths of WBG devices,some of the specific issues for machine drives and develop some potential solutions for future developments in power electronics.

Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using cryogenic on-chip multiplexing

Themass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator.It is,therefore,beneficial to contrast themeasurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability,integrability,reliability,and reproducibility of quantum devices and to save evaluation time,cost and energy.Here,we used a cryogenic on-chip multiplexer architecture and investigated the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact(QPC)transistors.Our single chips contain 256 split gate field-effect QPC transistors(QFET)each,with two 16-branch multiplexed source-drain and gate pads,allowing individual transistors to be selected,addressed and controlled through an electrostatic gate voltage process.A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures.From the measurements of 571 functioning QFETs taken at temperatures T[1.4 K and T[40 mK,it is found that the spontaneous polarisation model and Kondo effect do not fit our results.Furthermore,some of the features in our data largely agreed with van Hove model with short-range interactions.Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QFETs,paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics,for scalable quantum logic control,readout,synthesis,and processing applications.