Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches

A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge is caused by the interaction between the self-excitation of the resonant circuit and transferred electron oscillation of the switch. The bias electric field （larger than Gunn threshold） across the switch is modulated by the AC elec-tric field,when the instantaneous bias electric field E is swinging below Gunn electric field threshold ET but grea-ter than the sustaining field Es （the minimum electric field required to support the domain） at the time of the do-main reaching the anode, and then the delayed-dipole domain mode of switch is obtained. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length prod-uct of 10^12 cm^-2,and the semi-insulating GaAs photoconductive semiconductor switch is essentially a type of pho-ton-activated charge domain device.

Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch

An experimental study of leakage current is presented in a semi-insulating（SI） Ga As photoconductive semiconductor switch（PCSS） with voltages up to 5.8 kV（average field is 19.3 kV/cm）. The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n（E） characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J（E）, further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.

Regulating the dopant clustering in LiZnAs-based diluted magnetic semiconductor

Tuning of the magnetic interaction plays the vital role in reducing the clustering of magnetic dopant in diluted magnetic semiconductors(DMS).Due to the not well understood magnetic mechanism and the interplay between different magnetic mechanisms,no efficient and universal tuning strategy is proposed at present.Here,the magnetic interactions and formation energies of isovalent-doped(Mn) and aliovalent(Cr)-doped LiZnAs are studied based on density functional theory(DFT).It is found that the dopant–dopant distance-dependent magnetic interaction is highly sensitive to the carrier concentration and carrier type and can only be explained by the interplay between two magnetic mechanisms,i.e.,superexchange and Zener’s p–d exchange model.Thus,the magnetic behavior and clustering of magnetic dopant can be tuned by the interplay between two magnetic mechanisms.The insensitivity of the tuning effect to U parameter suggests that our strategy could be universal to other DMS.

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)

Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolutions under external pres-sures are required to analyze the mechanisms.Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells.The materials become ferromagnetic with Curie temperature of 105 K after further 20%K doping.The title material undergoes an isostruc-tural phase transition at around 19 GPa.Below the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying pressures.Accompanied with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase transition.With further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

Magneto-Photo-Thermoelastic Excitation Rotating Semiconductor Medium Based on Moisture Diffusivity

In this research,we focus on the free-surface deformation of a one-dimensional elastic semiconductor medium as a function of magnetic field and moisture diffusivity.The problem aims to analyze the interconnection between plasma and moisture diffusivity processes,as well as thermo-elastic waves.The study examines the photothermoelasticity transport process while considering the impact of moisture diffusivity.By employing Laplace’s transformation technique,we derive the governing equations of the photo-thermo-elastic medium.These equations include the equations for carrier density,elastic waves,moisture transport,heat conduction,and constitutive relationships.Mechanical stresses,thermal conditions,and plasma boundary conditions are used to calculate the fundamental physical parameters in the Laplace domain.By employing numerical techniques,the Laplace transform is inverted to get complete time-domain solutions for the primary physical domains under study.Referencemoisture,thermoelastic,and thermoelectric characteristics are employed in conjunction with a graphical analysis that takes into consideration the effects of applied forces on displacement,moisture concentration,carrier density,stress due to forces,and temperature distribution.

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Low-Cost and Biodegradable Thermoelectric Devices Based on van der Waals Semiconductors on Paper Substrates

We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates.The devices are based on thin films of WS_(2),Te,and BP(P-type semiconductors)and TiS_(3)and TiS_(2)(N-type semiconductors),deposited by simply rubbing powder of these materials against paper.The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of(+1.32±0.27)mV K^(-1)and(-0.82±0.15)mV K^(-1)for WS_(2)and TiS_(3),respectively.Additionally,Peltier elements were fabricated by interconnecting the P-and N-type films with graphite electrodes.A thermopower value up to 6.11 mV K^(-1)was obtained when the Peltier element were constructed with three junctions.The findings of this work show proof-of-concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low-cost disposable electronic devices.

Functional Confirmation Using a Medical X-Ray System of a Semiconductor Survey Meter

In recent years, semiconductor survey meters have been developed and are in increasing demand worldwide. This study determined if it is possible to use the X-ray system installed in each medical facility to calculate the time constant of a semiconductor survey meter and confirm the meter’s function. An additional filter was attached to the medical X-ray system to satisfy the standards of N-60 to N-120, more copper plates were added as needed, and the first and second half-value layers were calculated to enable comparisons of the facility’s X-ray system quality with the N-60 to N-120 quality values. Next, we used a medical X-ray system to measure the leakage dose and calculate the time constant of the survey meter. The functionality of the meter was then checked and compared with the energy characteristics of the meter. The experimental results showed that it was possible to use a medical X-ray system to reproduce the N-60 to N-120 radiation quality values and to calculate the time constant from the measured results, assuming actual leakage dosimetry for that radiation quality. We also found that the calibration factor was equivalent to that of the energy characteristics of the survey meter.

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

(Ga,Fe)Sb is a promising magnetic semiconductor(MS)for spintronic applications because its Curie temperature(T_(C))is above 300 K when the Fe concentration is higher than 20%.However,the anisotropy constant Ku of(Ga,Fe)Sb is below 7.6×10^(3)erg/cm^(3)when Fe concentration is lower than 30%,which is one order of magnitude lower than that of(Ga,Mn)As.To address this issue,we grew Ga_(1-x-y)Fe_(x)Ni_(y)Sb films with almost the same x(≈24%)and different y to characterize their magnetic and electrical transport properties.We found that the magnetic anisotropy of Ga_(0.76-y)Fe_(0.24)Ni_(y)Sb can be enhanced by increasing y,in which Ku is negligible at y=1.7%but increases to 3.8×10^(5)erg/cm^(3)at y=6.1%(T_(C)=354 K).In addition,the hole mobility(μ)of Ga_(1-x-y)Fe_(x)Ni_(y)Sb reaches 31.3 cm^(2)/(V∙s)at x=23.7%,y=1.7%(T_(C)=319 K),which is much higher than the mobility of Ga_(1-x)Fe_(x)Sb at x=25.2%(μ=6.2 cm^(2)/(V∙s)).Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of(Ga,Fe)Sb by using Ni co-doping.

Semitransparent organic photovoltaics enabled by transparent p-type inorganic semiconductor and near-infrared acceptor

Semitransparent organic photovoltaics(STOPVs)have gained wide attention owing to their promising applications in building-integrated photovoltaics,agrivoltaics,and floating photovoltaics.Organic semiconductors with high charge carrier mobility usually have planar and conjugated structures,thereby showing strong absorption in visible region.In this work,a new concept of incorporating transparent inorganic semiconductors is proposed for high-performance STOPVs.Copper(I)thiocyanate(CuSCN)is a visible-transparent inorganic semiconductor with an ionization potential of 5.45 eV and high hole mobility.The transparency of CuSCN benefits high average visible transmittance(AVT)of STOPVs.The energy levels of CuSCN as donor match those of near-infrared small molecule acceptor BTP-eC9,and the formed heterojunction exhibits an ability of exciton dissociation.High mobility of CuSCN contributes to a more favorable charge transport channel and suppresses charge recombination.The control STOPVs based on PM6/BTP-eC9 exhibit an AVT of 19.0%with a power conversion efficiency(PCE)of 12.7%.Partial replacement of PM6 with CuSCN leads to a 63%increase in transmittance,resulting in a higher AVT of 30.9%and a comparable PCE of 10.8%.

Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo-MXene/Mo-Metal Sulfides for Electromagnetic Response

The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave(EMW)absorption materials.However,the loss mechanism in traditional heterostructures is relatively simple,guided by empirical observations,and is not monotonous.In this work,we presented a novel semiconductor-semiconductor-metal heterostructure sys-tem,Mo-MXene/Mo-metal sulfides(metal=Sn,Fe,Mn,Co,Ni,Zn,and Cu),including semiconductor junctions and Mott-Schottky junctions.By skillfully combining these distinct functional components(Mo-MXene,MoS_(2),metal sulfides),we can engineer a multiple heterogeneous interface with superior absorption capabilities,broad effective absorption bandwidths,and ultrathin matching thickness.The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer,as confirmed by density functional theory,which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption.We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces.The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide,which achieved remarkable reflection loss values of-70.6 dB at a matching thickness of only 1.885 mm.Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology.This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.

Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter

This paper theoretically studies the axisymmetric frictionless indentation of a transversely isotropic piezoelectric semiconductor(PSC)half-space subject to a rigid flatended cylindrical indenter.The contact area and other surface of the PSC half-space are assumed to be electrically insulating.By the Hankel integral transformation,the problem is reduced to the Fredholm integral equation of the second kind.This equation is solved numerically to obtain the indentation behaviors of the PSC half-space,mainly including the indentation force-depth relation and the electric potential-depth relation.The results show that the effect of the semiconductor property on the indentation responses is limited within a certain range of variation of the steady carrier concentration.The dependence of indentation behavior on material properties is also analyzed by two different kinds of PSCs.Finite element simulations are conducted to verify the results calculated by the integral equation technique,and good agreement is demonstrated.

Solar‑Driven Sustainability:Ⅲ–ⅤSemiconductor for Green Energy Production Technologies

Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges.It has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge transfer.This focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic systems.The review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction reactions.In order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge separation.It also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen production.The main purpose is to produce hydrogen through sustainable and ecologically friendly energy conversion.The review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.

Analysis of piezoelectric semiconductor fibers under gradient temperature changes

Piezoelectric semiconductors(PSs)possess both semiconducting properties and piezoelectric coupling effects,making them optimal building blocks for semiconductor devices.PS fiber-like structures have wide applications in multi-functional semiconductor devices.In this paper,a one-dimensional(1D)theoretical model is established to describe the piezotronic responses of a PS fiber under gradient temperature changes.The theoretical model aims to explain the mechanism behind the resistance change caused by such gradient temperature changes.Numerical results demonstrate that a gradient temperature change significantly affects the physical fields within the PS fiber,and can induce changes in its surface resistance.It provides important theoretical guidance on the development of piezotronic devices that are sensitive to temperature effects.

Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.

First-Principle Study on the Electronic Structure and Optical Property of New Diluted Magnetic Semiconductor(Y_(0.75)Ca_(0.25))(Cu_(0.75)Mn_(0.25))SO

The band structure,DOSs,and optical properties of(Y_(0.75)Ca_(0.25))(Cu_(0.75)Mn_(0.25))SO,including dielectric function,absorption function,reflection function,and energy loss spectrum were studied by using the first-principles calculation.The calculation results indicate that(Y_(0.75)Ca_(0.25))(Cu_(0.75)Mn_(0.25))SO is a direct bandgap semiconductor with a bandgap of 1.1 eV.The Fermi surface is asymmetric and exhibits spin splitting phenomenon.The new type of dilute magnetic semiconductor(Y_(0.75)Ca_(0.25))(Cu_(0.75)Mn_(0.25))SO exhibits significant light loss around 70 eV,with light reflection gradually increasing after 30 eV,and light absorption mainly occurring around 8-30 eV.These results also provide a basis for the discovery of more types of 1111 phase new dilute magnetic semiconductors in the future.

Peculiar Photoconduction in Semi-Insulating GaAs Photoconductive Switch Triggered by 1064nm Laser Pulse

The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0 8mJ and the pulse width of 5ns,and operated at biased electric field of 2 0 and 6 0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9 5kV/cm,and the triggered laser is in range of 0 5～1 0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti site defects of semi insulating GaAs and two step single photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect,current-voltage ( I-V ),photoluminescence spectroscopy (PL) and photocurrent spectroscopy(PC)measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration.Fe doping concentration also influences optical properties and defective formation in as-grown SI InP.Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.

A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium

A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ion mass spectroscopy （SIMS） measurements, semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep acceptor level. The presence of different vanadium charge states V^3＋ and V^4＋ is detected by electron paramagnetic resonance and optical absorption measurements,which coincides with the results obtained by SIMS measurements. Both optical absorption and low temperature photoluminescence measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.