A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and perfor...A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10^（-1） W^（-1） at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.展开更多
Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal（MSM） ultraviolet photodetector is established with the simulation package ISE-TCAD.A device with 3μm electrode width（W） and 3μm e...Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal（MSM） ultraviolet photodetector is established with the simulation package ISE-TCAD.A device with 3μm electrode width（W） and 3μm electrode spacing（L） is simulated.The findings show that the MSM photodetector has quite a low dark current of 15 pA at 10V bias and the photocurrent is two orders of magnitude higher than the dark current.The influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device parameters.Simulation results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5.3 nA and 327 with device parameters of W=6μm,L=3μm and W =3μm,L=6μm,respectively.展开更多
基金Project supported by the Pre-Research Foundation from the National Ministries and Commissions of China(Nos.51323040118. 513080302)
文摘A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10^（-1） W^（-1） at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.
基金Project supported by the Pre-Research Foundation from the National Ministries and Commissions,China(Nos.51323040118, 513080302).
文摘Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal（MSM） ultraviolet photodetector is established with the simulation package ISE-TCAD.A device with 3μm electrode width（W） and 3μm electrode spacing（L） is simulated.The findings show that the MSM photodetector has quite a low dark current of 15 pA at 10V bias and the photocurrent is two orders of magnitude higher than the dark current.The influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device parameters.Simulation results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5.3 nA and 327 with device parameters of W=6μm,L=3μm and W =3μm,L=6μm,respectively.
