PSC及WHO胰胆管细胞学报告系统在胰腺肿物诊断中的应用

目的探讨Papanicolaou细胞病理学会(PSC)及世界卫生组织(WHO)胰胆管细胞学报告系统在胰腺肿物诊断中的应用。方法回顾411例胰腺超声内镜引导下细针穿刺细胞学(EUS-FNAC),根据PSC及WHO进行分级,并与组织病理对比分析。结果根据PSC,18例(4.4%)诊断为Ⅰ级;155例(37.7%)诊断为Ⅱ级;32例(7.8%)诊断为Ⅲ级;64例(15.6%)诊断为Ⅳ级(其中ⅣA级14例,ⅣB级50例);51例(12.4%)诊断为Ⅴ级;91例(22.1%)诊断为Ⅵ级。根据WHO:Ⅰ-Ⅲ级病变分类与PSC分类一致;14例(3.4%)诊断为Ⅳ级;39例(9.4%)诊断为Ⅴ级;51例(12.4%)诊断为Ⅵ级;102例(24.9%)诊断为Ⅶ级。FNAC对胰腺肿瘤诊断准确率为95.7%(376/393),敏感性为96.5%(196/203),特异性为94.7%(180/190)。结论PSC和WHO胰胆管细胞学报告可以与临床医生进行有效的交流。

Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter

This paper theoretically studies the axisymmetric frictionless indentation of a transversely isotropic piezoelectric semiconductor(PSC)half-space subject to a rigid flatended cylindrical indenter.The contact area and other surface of the PSC half-space are assumed to be electrically insulating.By the Hankel integral transformation,the problem is reduced to the Fredholm integral equation of the second kind.This equation is solved numerically to obtain the indentation behaviors of the PSC half-space,mainly including the indentation force-depth relation and the electric potential-depth relation.The results show that the effect of the semiconductor property on the indentation responses is limited within a certain range of variation of the steady carrier concentration.The dependence of indentation behavior on material properties is also analyzed by two different kinds of PSCs.Finite element simulations are conducted to verify the results calculated by the integral equation technique,and good agreement is demonstrated.

基于虚拟现实技术的船舶PSC检查训练仿真系统

针对现有PSCO培训效果差、风险和成本较高的问题,提出并开发了不受时间和场地限制的船舶PSC检查训练仿真系统。以集装箱船为例,运用三维建模技术构建船舶主要区域和仪器设备的模型,使用OCR文字识别技术实现证书文件的有效信息提取,运用反向动力学技术实现虚拟船员在三维场景中的操作模拟,运用模糊综合评判法建立PSC检查训练的评估模型,实现对学员检查过程的评估。仿真结果表明,所开发的系统场景沉浸感良好、满足PSC检查训练的需求,可用于PSCO的教学与培训。

Regulating the dopant clustering in LiZnAs-based diluted magnetic semiconductor

Tuning of the magnetic interaction plays the vital role in reducing the clustering of magnetic dopant in diluted magnetic semiconductors(DMS).Due to the not well understood magnetic mechanism and the interplay between different magnetic mechanisms,no efficient and universal tuning strategy is proposed at present.Here,the magnetic interactions and formation energies of isovalent-doped(Mn) and aliovalent(Cr)-doped LiZnAs are studied based on density functional theory(DFT).It is found that the dopant–dopant distance-dependent magnetic interaction is highly sensitive to the carrier concentration and carrier type and can only be explained by the interplay between two magnetic mechanisms,i.e.,superexchange and Zener’s p–d exchange model.Thus,the magnetic behavior and clustering of magnetic dopant can be tuned by the interplay between two magnetic mechanisms.The insensitivity of the tuning effect to U parameter suggests that our strategy could be universal to other DMS.

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)

Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolutions under external pres-sures are required to analyze the mechanisms.Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells.The materials become ferromagnetic with Curie temperature of 105 K after further 20%K doping.The title material undergoes an isostruc-tural phase transition at around 19 GPa.Below the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying pressures.Accompanied with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase transition.With further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

Magneto-Photo-Thermoelastic Excitation Rotating Semiconductor Medium Based on Moisture Diffusivity

In this research,we focus on the free-surface deformation of a one-dimensional elastic semiconductor medium as a function of magnetic field and moisture diffusivity.The problem aims to analyze the interconnection between plasma and moisture diffusivity processes,as well as thermo-elastic waves.The study examines the photothermoelasticity transport process while considering the impact of moisture diffusivity.By employing Laplace’s transformation technique,we derive the governing equations of the photo-thermo-elastic medium.These equations include the equations for carrier density,elastic waves,moisture transport,heat conduction,and constitutive relationships.Mechanical stresses,thermal conditions,and plasma boundary conditions are used to calculate the fundamental physical parameters in the Laplace domain.By employing numerical techniques,the Laplace transform is inverted to get complete time-domain solutions for the primary physical domains under study.Referencemoisture,thermoelastic,and thermoelectric characteristics are employed in conjunction with a graphical analysis that takes into consideration the effects of applied forces on displacement,moisture concentration,carrier density,stress due to forces,and temperature distribution.

Functional Confirmation Using a Medical X-Ray System of a Semiconductor Survey Meter

In recent years, semiconductor survey meters have been developed and are in increasing demand worldwide. This study determined if it is possible to use the X-ray system installed in each medical facility to calculate the time constant of a semiconductor survey meter and confirm the meter’s function. An additional filter was attached to the medical X-ray system to satisfy the standards of N-60 to N-120, more copper plates were added as needed, and the first and second half-value layers were calculated to enable comparisons of the facility’s X-ray system quality with the N-60 to N-120 quality values. Next, we used a medical X-ray system to measure the leakage dose and calculate the time constant of the survey meter. The functionality of the meter was then checked and compared with the energy characteristics of the meter. The experimental results showed that it was possible to use a medical X-ray system to reproduce the N-60 to N-120 radiation quality values and to calculate the time constant from the measured results, assuming actual leakage dosimetry for that radiation quality. We also found that the calibration factor was equivalent to that of the energy characteristics of the survey meter.

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

(Ga,Fe)Sb is a promising magnetic semiconductor(MS)for spintronic applications because its Curie temperature(T_(C))is above 300 K when the Fe concentration is higher than 20%.However,the anisotropy constant Ku of(Ga,Fe)Sb is below 7.6×10^(3)erg/cm^(3)when Fe concentration is lower than 30%,which is one order of magnitude lower than that of(Ga,Mn)As.To address this issue,we grew Ga_(1-x-y)Fe_(x)Ni_(y)Sb films with almost the same x(≈24%)and different y to characterize their magnetic and electrical transport properties.We found that the magnetic anisotropy of Ga_(0.76-y)Fe_(0.24)Ni_(y)Sb can be enhanced by increasing y,in which Ku is negligible at y=1.7%but increases to 3.8×10^(5)erg/cm^(3)at y=6.1%(T_(C)=354 K).In addition,the hole mobility(μ)of Ga_(1-x-y)Fe_(x)Ni_(y)Sb reaches 31.3 cm^(2)/(V∙s)at x=23.7%,y=1.7%(T_(C)=319 K),which is much higher than the mobility of Ga_(1-x)Fe_(x)Sb at x=25.2%(μ=6.2 cm^(2)/(V∙s)).Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of(Ga,Fe)Sb by using Ni co-doping.

Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo-MXene/Mo-Metal Sulfides for Electromagnetic Response

The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave(EMW)absorption materials.However,the loss mechanism in traditional heterostructures is relatively simple,guided by empirical observations,and is not monotonous.In this work,we presented a novel semiconductor-semiconductor-metal heterostructure sys-tem,Mo-MXene/Mo-metal sulfides(metal=Sn,Fe,Mn,Co,Ni,Zn,and Cu),including semiconductor junctions and Mott-Schottky junctions.By skillfully combining these distinct functional components(Mo-MXene,MoS_(2),metal sulfides),we can engineer a multiple heterogeneous interface with superior absorption capabilities,broad effective absorption bandwidths,and ultrathin matching thickness.The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer,as confirmed by density functional theory,which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption.We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces.The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide,which achieved remarkable reflection loss values of-70.6 dB at a matching thickness of only 1.885 mm.Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology.This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.

Semitransparent organic photovoltaics enabled by transparent p-type inorganic semiconductor and near-infrared acceptor

Semitransparent organic photovoltaics(STOPVs)have gained wide attention owing to their promising applications in building-integrated photovoltaics,agrivoltaics,and floating photovoltaics.Organic semiconductors with high charge carrier mobility usually have planar and conjugated structures,thereby showing strong absorption in visible region.In this work,a new concept of incorporating transparent inorganic semiconductors is proposed for high-performance STOPVs.Copper(I)thiocyanate(CuSCN)is a visible-transparent inorganic semiconductor with an ionization potential of 5.45 eV and high hole mobility.The transparency of CuSCN benefits high average visible transmittance(AVT)of STOPVs.The energy levels of CuSCN as donor match those of near-infrared small molecule acceptor BTP-eC9,and the formed heterojunction exhibits an ability of exciton dissociation.High mobility of CuSCN contributes to a more favorable charge transport channel and suppresses charge recombination.The control STOPVs based on PM6/BTP-eC9 exhibit an AVT of 19.0%with a power conversion efficiency(PCE)of 12.7%.Partial replacement of PM6 with CuSCN leads to a 63%increase in transmittance,resulting in a higher AVT of 30.9%and a comparable PCE of 10.8%.

Analysis of piezoelectric semiconductor fibers under gradient temperature changes

Piezoelectric semiconductors(PSs)possess both semiconducting properties and piezoelectric coupling effects,making them optimal building blocks for semiconductor devices.PS fiber-like structures have wide applications in multi-functional semiconductor devices.In this paper,a one-dimensional(1D)theoretical model is established to describe the piezotronic responses of a PS fiber under gradient temperature changes.The theoretical model aims to explain the mechanism behind the resistance change caused by such gradient temperature changes.Numerical results demonstrate that a gradient temperature change significantly affects the physical fields within the PS fiber,and can induce changes in its surface resistance.It provides important theoretical guidance on the development of piezotronic devices that are sensitive to temperature effects.

Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.

PSC与PSC程序

《港口国监督程序2023》于2023年12月经国际海事组织(IMO)第A.1185(33)号决议通过。该程序在《港口国监督程序2021》的基础上进行了修订,修订内容包括中止检查的细化完善和《国际防止船舶造成污染公约》(MARPOL)附则VI检查导则的修订等。虽然是“小修小补”,但变化依然明显。我们不妨从港口国监督(PSC)与港口国监督程序的演进入手,来一探这次修订所涉“中止检查细化内容”“防治空气污染检查扩容”等重点内容的究竟。

PSC程序的历史演进

2023年12月,IMO通过了《港口国监督程序2023》,这次修订显示了未来港口国监督方面的努力方向。《港口国监督程序2023》在2021版的基础上进行了修订,虽然此次的“小修小补”没有带来根本性的变化,但我们仍可以从港口国监督(PSC)及PSC程序的发展演变中,窥探到IMO的努力方向。

矮塔斜拉桥PSC梁预制及架设关键施工技术分析

PSC梁因其具有抗裂性好、自重轻、受压构件稳定性强的优点,在桥梁得到了广泛应用。依托非洲马古富力大桥工程,分析工程PSC梁预制及安装全过程关键技术。结果表明:采用应力和伸长量双控方法进行钢绞线伸长计算较为准确;预制梁张拉过后,可以考虑采用优化混凝土配合比和梁端台座处理的方式,去有效解决梁端混凝土破裂的问题。

2023年中国PSC检查主要数据分析

一、中国PSC检查情况2023年,随着新冠病毒感染调整为“乙类乙管”,中国港口国监督(PSC)逐步恢复正常,全年共进行PSC初次检查7 721艘次,各PSC检查单位共开具缺陷31 767项,滞留船舶727艘次,滞留率为9.42%,单船平均缺陷数量为4.11项。(一)直属海事局检查数量从PSC初次检查数量来看,山东海事局以1 204艘次位列第一,广东海事局以1 000艘次位列第二,上海海事局以864艘次位列第三。从单船平均缺陷数量来看,连云港海事局以5.26项位列第一,山东海事局以4.98项位列第二,辽宁海事局以4.55项位列第三。

亚太地区港口国监督谅解备忘录2023年PSC年报解读

2023年是亚太地区港口国监督谅解备忘录(Tokyo MOU)组织成立30周年。在过去30年中,区域内PSC检查次数增加了4倍,滞留率逐年下降,彰显了亚太地区港口国监督谅解备忘录在确保亚太地区船舶合规性方面的突出贡献。2023年10月30日起,墨西哥正式成为亚太地区港口国监督谅解备忘录的第22个成员国,墨西哥的加入标志着亚太地区港口国监督谅解备忘录持续壮大,成为一个覆盖22个成员国的强大国际组织。亚太地区港口国监督谅解备忘录通过其有效的运作,在打击区域低标准船舶和促进港口国监督程序的统一实施等方面发挥了重要作用。

近期PSC检查发现的船舶防污染操作典型问题

垃圾记录簿和油类记录簿是船舶防污染操作记录的法定文书,近期,广州海事局安检站PSCO检查多艘船舶的垃圾记录簿和油类记录簿时,发现船舶防污染操作记录存在严重问题,深入检查发现,船长、轮机长及大副不熟悉MARPOL公约,不熟悉垃圾管理计划。

基于PSC-PWM的MMC-SAPF中压配电网谐振阻尼技术

中压(medium voltage,MV)配电网中无功补偿电容器易与网侧电感形成并联谐振,放大公共耦合点(point of common coupling,PCC)电压。为了应对两电平并联型有源电力滤波器(shunt active power filter,SAPF)不适用于中压配电网场合,且只抑制谐波不能解决谐波与谐振同时存在的问题,提出了一种基于模块化多电平的并联型有源电力滤波器(modular multilevel converter based SAPF,MMC-SAPF)的谐振阻尼技术。首先分析了MMC-SAPF的工作原理,采用载波移相调制策略(phase shifted carrier PWM,PSC-PWM)以及电容电压平衡控制策略,以实现MMC-SAPF的高等效开关频率。然后分析了MV配电网的谐振机理,指出谐波抑制策略失效的原因,在此基础上,提出将MMC-SAPF控制为谐振频率处的虚拟电阻,提高系统阻尼比以治理谐振。搭建了一台60 V/2 kVA的实验样机,并构建7次谐振环境,实验结果验证了复合控制策略阻尼谐振的有效性。