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Two-photon absorption coefficient dichroism in Ⅱ-Ⅵ semiconductor crystals
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作者 马红 马国宏 +1 位作者 马洪良 唐星海 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第12期3873-3878,共6页
Considering two beams propagate in semiconductor crystal, this paper discusses the polarization dependence of pump beam-induced intensity attenuation of probe beam due to two-photon absorption (TPA). Numerical calcu... Considering two beams propagate in semiconductor crystal, this paper discusses the polarization dependence of pump beam-induced intensity attenuation of probe beam due to two-photon absorption (TPA). Numerical calculation and experimental measurement demonstrate that TPA coefficient is polarization dependent. For homogeneous materials, probe beam attenuation arises from the imaginary part of diagonal and off-diagonal components of third-order nonlinear susceptibilities. 展开更多
关键词 two-photon absorption semiconductor crystals nonlinear susceptibility polarization dependence
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Photodetectors based on small-molecule organic semiconductor crystals 被引量:2
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作者 潘京 邓巍 +3 位作者 徐秀真 姜天昊 张秀娟 揭建胜 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第3期26-39,共14页
Small-molecule organic semiconductor crystals(SMOSCs) combine broadband light absorption(ultraviolet–visible–near infrared) with long exciton diffusion length and high charge carrier mobility. Therefore, they are pr... Small-molecule organic semiconductor crystals(SMOSCs) combine broadband light absorption(ultraviolet–visible–near infrared) with long exciton diffusion length and high charge carrier mobility. Therefore, they are promising candidates for realizing high-performance photodetectors. Here, after a brief resume of photodetector performance parameters and operation mechanisms, we review the recent advancements in application of SMOSCs as photodetectors, including photoconductors, phototransistors, and photodiodes. More importantly, the SMOSC-based photodetectors are further categorized according to their detection regions that cover a wide range from ultraviolet to near infrared. Finally, challenges and outlooks of SMOSC-based photodetectors are provided. 展开更多
关键词 small MOLECULE ORGANIC semiconductor crystalS PHOTODETECTORS
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Controlled 2D growth of organic semiconductor crystals by suppressing “coffee-ring” effect 被引量:2
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作者 Wei Wang Bei Lu +5 位作者 Wei Deng Xiujuan Zhang Zhengjun Lu Di Wu Jiansheng Jie Xiaohong Zhang 《Nano Research》 SCIE EI CAS CSCD 2020年第9期2478-2484,共7页
Owing to enhanced charge transport efficiency arising from the ultrathin nature,two-dimensional(2D)organic semiconductor single crystals(OSSCs)are emerging as a fascinating platform for high-performance organic field-... Owing to enhanced charge transport efficiency arising from the ultrathin nature,two-dimensional(2D)organic semiconductor single crystals(OSSCs)are emerging as a fascinating platform for high-performance organic field-effect transistors(OFETs).However,ucoffee-ring"effect induced by an evaporation-induced convective flow near the contact line hinders the large-area growth of 2D OSSCs through a solution process.Here,we develop a new strategy of suppressing the"coffee-ring"effect by using an organic semiconductor:polymer blend solution.With the high-viscosity polymer in the organic solution,the evaporation-induced flow is remarkably weakened,ensuring the uniform molecule spreading for the 2D growth of the OSSCs.As an example,wafer-scale growth of crystalline film consisting of few-layered 2,7-didecylbenzothienobenzothiophene(C10-BTBT)crystals was successfully accomplished via blade coating.OFETs based on the crystalline film exhibited a maximum hole mobility up to 12.6 cm^2·V^-1·s^-1,along with an average hole mobility as high as 8.2 cm^2·V^-1·s^-1.Our work provides a promising strategy for the large-area growth of 2D OSSCs toward high-performance organic electronics. 展开更多
关键词 two-dimensional(2D)organic semiconductor single crystals two-dimensional(2D)growth mode coffee-ring effect organic field-effect transistors
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Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor 被引量:2
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作者 薛钦文 王晓华 +1 位作者 刘成林 刘友文 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第3期122-128,共7页
The tunable terahertz(THz) filter has been designed and studied, which is composed of 1D photonic crystal(PC) containing a defect layer of semiconductor Ga As. The analytical solution of 1D defective PC(1DDPC) i... The tunable terahertz(THz) filter has been designed and studied, which is composed of 1D photonic crystal(PC) containing a defect layer of semiconductor Ga As. The analytical solution of 1D defective PC(1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO_2)~N/GaAs/(SiO_2/Si)~N/air is far higher than in asymmetric structure of air/(Si/SiO_2)~N/GaAs/(Si/SiO_2)~N/air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor. 展开更多
关键词 photonic crystal semiconductor THZ FILTER
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Semiconductor photonic crystal laser
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作者 郑婉华 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第11期167-175,共9页
By combing artificial micro–nano structures, photonic crystals(PCs), with traditional semiconductor laser material to realize the dynamic collaborative control of photonic states and confined electrons, the band en... By combing artificial micro–nano structures, photonic crystals(PCs), with traditional semiconductor laser material to realize the dynamic collaborative control of photonic states and confined electrons, the band engineering of the PC has been confirmed. This brings new development space for the semiconductor laser, such as for low threshold and high efficiency.Based on a series of works by Zheng's group, this paper has reviewed kinds of PC lasers including electrical injection PC vertical cavity and lateral cavity surface-emitting lasers, and PC high beam quality lasers, to show that the PC is vital for promoting the continuous improvement of semiconductor laser performance at present and in the future. 展开更多
关键词 semiconductor laser photonic crystal complex cavity
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Express Methods for Measurement of Electroconductivity of Semiconductor Layered Crystal
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作者 FILIPPOV V. V. VLASOV A. N. 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期114-117,共4页
We describe theoretically the grounded method of measuring the conductivity of anisotropic layered semiconductor materials. The suggested method implies the use of a four-probe testing device with a linear arrangement... We describe theoretically the grounded method of measuring the conductivity of anisotropic layered semiconductor materials. The suggested method implies the use of a four-probe testing device with a linear arrangement of probes. The final expressions for identifying the electrical conductivity are presented in the form of a series of analytic functions. The suggested method is experimentally verified, and practical recommendations of how to apply it are also provided. 展开更多
关键词 Express Methods for Measurement of Electroconductivity of semiconductor Layered crystal
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Application of Photonic Crystals in Semiconductor Lasers
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作者 LIU Guang-yu ZHANG Yan +7 位作者 PENG Biao SUN Yan-fang LI Te CUI Jin-jiang NING Yong-qiang QIN Li LIU Yun WANG Li-jun 《光机电信息》 2007年第5期31-32,37-40,共6页
Photonic crystals(PCs) have attracted much considerable research attention in the past two decades. They are artificially fabricated periodic dielectric structures. The periodic dielectric structures have photonic ban... Photonic crystals(PCs) have attracted much considerable research attention in the past two decades. They are artificially fabricated periodic dielectric structures. The periodic dielectric structures have photonic band gap(PBG) and are referred to as photonic band gap materials. This paper mainly introduces one-dimensional (1-D) and 2D PCs applied in the semiconductor lasers. 展开更多
关键词 光子晶体 半导体激光器 应用 周期性介电结构
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GaSb单晶研究进展
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作者 刘京明 杨俊 +3 位作者 赵有文 杨成奥 蒋洞微 牛智川 《人工晶体学报》 北大核心 2024年第1期1-11,共11页
近年来,锑化物红外技术发展迅速,成为半导体技术的重要发展方向之一。锑化镓(GaSb)作为典型的Ⅲ-Ⅴ族化合物半导体,凭借优异的性能成为锑化物红外光电器件的关键衬底材料。随着锑化物红外技术逐步成熟和应用逐渐开展,人们对GaSb单晶片... 近年来,锑化物红外技术发展迅速,成为半导体技术的重要发展方向之一。锑化镓(GaSb)作为典型的Ⅲ-Ⅴ族化合物半导体,凭借优异的性能成为锑化物红外光电器件的关键衬底材料。随着锑化物红外技术逐步成熟和应用逐渐开展,人们对GaSb单晶片的需求日益剧增的同时也对其质量提出更高的要求。GaSb单晶片质量直接影响着外延材料和器件性能,这就要求GaSb单晶片具有大尺寸、更低的缺陷密度、更好的表面质量和一致性。本文就GaSb晶体材料的性质、制备方法、国内外机构的研究进展及其应用情况进行了综述,并对其发展前景和趋势进行了展望。 展开更多
关键词 锑化镓 化合物半导体 锑化物 晶体 红外光电器件
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VGF法磷化铟单晶炉加热器对炉内热场分布影响的研究
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作者 艾家辛 万洪平 +1 位作者 钱俊兵 韦华 《人工晶体学报》 CAS 北大核心 2024年第5期781-791,共11页
磷化铟(InP)是一种重要的化合物半导体,在通信、航空航天和人工智能等领域具有广泛的应用。InP单晶生长质量的优劣取决于其生长炉内热场的稳定与温控。InP晶体工业生产中广泛采用的垂直梯度凝固(VGF)法是在磷化铟单晶生长炉中构建高温... 磷化铟(InP)是一种重要的化合物半导体,在通信、航空航天和人工智能等领域具有广泛的应用。InP单晶生长质量的优劣取决于其生长炉内热场的稳定与温控。InP晶体工业生产中广泛采用的垂直梯度凝固(VGF)法是在磷化铟单晶生长炉中构建高温、封闭、稳定及可控的热场,但因炉内缺乏直接观测和完整的参数监测手段,利用计算机数值仿真对炉内晶体生长的温度场进行科学分析,以获取最佳的生长温控条件,俨然成为有效且重要的方法。本文基于ANSYS有限元软件及炉内元件实测参数,建立了InP单晶生长系统热场三维物理和数学模型,基于磷化铟单晶生长过程中的温度离散数据,对所建模型对比和验证,获得了与实际生产温度数据吻合良好的效果(温度偏差控制在3%以内),验证了所建模型的有效性。基于此模型,本文对生产条件下四段加热器温度波动对热场分布影响进行了探讨,并对炉内四段加热器的温度波动对炉内低温区、高温区及料管中心温度影响规律进行了研究,所得结论对揭示工业生产过程中InP单晶炉热场的分布规律及调节方法具有一定的指导意义。 展开更多
关键词 磷化铟单晶 垂直梯度凝固法 热场 数值模拟 半导体 晶体生长
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微腔真空场对辐射过程的调控及应用(特邀)
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作者 程晓天 汪玲芳 +5 位作者 于家望 丁舒宁 倪之博 王宏斌 周晓青 金潮渊 《光子学报》 EI CAS CSCD 北大核心 2024年第5期57-79,共23页
真空电磁模式与辐射源之间的相互耦合决定了辐射源的辐射特性。光学微腔能够对真空光子态密度进行有效调控,进而影响辐射源的辐射过程。微腔内真空电磁场的局域分布可以通过微纳结构来改变,从而调节辐射源与光子的相互作用,为微纳激光... 真空电磁模式与辐射源之间的相互耦合决定了辐射源的辐射特性。光学微腔能够对真空光子态密度进行有效调控,进而影响辐射源的辐射过程。微腔内真空电磁场的局域分布可以通过微纳结构来改变,从而调节辐射源与光子的相互作用,为微纳激光、量子光源、片上光学网络等应用领域提供新颖的功能性器件。然而,真空场的静态调控方法存在其固有限制,即一旦完成制备无法更改其性能,因此微腔光子器件迫切需要动态或者准动态的调控技术来实现相应的功能。本文综述了基于材料性质、环境参数和耦合效应的多种调控手段,以期实现对器件真空场分布的后端调控。总结了国内外在半导体微腔真空场调控方面的研究进展,并提出了未来的研究展望。主动后端调控手段有望在集成微纳光学和量子信息处理等领域得到广泛的应用。 展开更多
关键词 半导体微腔 辐射过程 纳米光子学及光子晶体 半导体激光器件
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基于溶液法制备卤化铅钙钛矿的直接型辐射探测器研究进展
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作者 秦峰 吴金杰 +4 位作者 邓宁勤 焦志伟 朱伟峰 汤显强 赵瑞 《人工晶体学报》 CAS 北大核心 2024年第4期554-571,共18页
X射线和γ射线探测在医学成像、安防检查、国土安全、无损检测等各个领域得到广泛应用,钙钛矿材料具有高辐射吸收系数、高载流子迁移率-寿命乘积、特殊的缺陷容忍特性而成为辐射探测器件优异的候选材料。溶液法在制备钙钛矿材料方面具... X射线和γ射线探测在医学成像、安防检查、国土安全、无损检测等各个领域得到广泛应用,钙钛矿材料具有高辐射吸收系数、高载流子迁移率-寿命乘积、特殊的缺陷容忍特性而成为辐射探测器件优异的候选材料。溶液法在制备钙钛矿材料方面具有显著的优势,溶液法的成本较低,能在低温或环境条件下制备,更易推行工业化生产,是未来优化材料体系,制备高质量、大尺寸晶体材料的关键技术。本文从溶液法制备卤化铅钙钛矿材料的角度出发,分析晶体生长及材料组成对辐射探测性能的影响,重点介绍从优化晶体生长质量和器件结构设计等方面提升辐射探测性能,最后总结钙钛矿材料在辐射探测领域面临的挑战,并展望了未来研究的发展方向,期望为钙钛矿材料在辐射探测领域走向工业化提供参考。 展开更多
关键词 晶体生长 卤化铅钙钛矿 溶液法 半导体器件 辐射探测器
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1,1’-磺酰基双(2-甲基-1H-咪唑)对宽带隙钙钛矿太阳电池性能的影响
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作者 戴峣 王鹏阳 +1 位作者 赵颖 张晓丹 《太阳能学报》 EI CAS CSCD 北大核心 2024年第4期43-50,共8页
对倒置结构,带隙为1.68 eV的钙钛矿太阳电池光吸收层掺杂1,1’-磺酰基双(2-甲基-1H-咪唑),以改善钙钛矿薄膜质量,提高太阳电池性能。空间电荷限制电流(SCLC)测试结果表明,掺杂后的钙钛矿薄膜的缺陷密度明显降低;稳态光致发光光谱(PL)结... 对倒置结构,带隙为1.68 eV的钙钛矿太阳电池光吸收层掺杂1,1’-磺酰基双(2-甲基-1H-咪唑),以改善钙钛矿薄膜质量,提高太阳电池性能。空间电荷限制电流(SCLC)测试结果表明,掺杂后的钙钛矿薄膜的缺陷密度明显降低;稳态光致发光光谱(PL)结果表明,掺杂后的钙钛矿薄膜的非辐射复合被显著抑制;最终太阳电池的开路电压达到1.17 V,光电转换效率达到21.42%,在氮气环境下储存1000 h后,未封装的太阳电池仍能保持初始效率的96%,稳定性显著提高。 展开更多
关键词 钙钛矿太阳电池 晶体生长 宽带隙半导体 钝化 1 1’-磺酰基双(2-甲基-1H-咪唑)
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基于图像预处理的光学元件表面粗糙度测量系统
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作者 沈红伟 付苗苗 《激光杂志》 CAS 北大核心 2024年第5期252-256,共5页
在测量光学元件表面粗糙度时,测量结果往往比较片面,为此设计基于图像预处理技术的光学元件表面粗糙度测量系统。获取原始元件表面粗糙度干涉图像,通过对表面形貌图像实施图像去噪处理与倾斜校正处理获取滤波结果,通过自适应中值滤波算... 在测量光学元件表面粗糙度时,测量结果往往比较片面,为此设计基于图像预处理技术的光学元件表面粗糙度测量系统。获取原始元件表面粗糙度干涉图像,通过对表面形貌图像实施图像去噪处理与倾斜校正处理获取滤波结果,通过自适应中值滤波算法实施图像的去噪处理。在粗糙度参数评定模块中,根据取样长度对评定长度下定义,实施光学元件表面粗糙度的全面评定。利用设计系统测量三种光学元件的表面粗糙度。实验结果表明:通过设计系统能够获取高成像质量的表面粗糙度干涉图像,实现多种元件表面粗糙度的全面测量,具有一定应用价值。 展开更多
关键词 图像预见处理技术 压电陶瓷晶体 半导体激光器 光学元件 表面粗糙度测量
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超宽禁带半导体氧化镓材料的专利分析
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作者 崔颜军 闫春光 +4 位作者 宁平凡 牛萍娟 李明佳 孟宇陆 李雄杰 《河南科技》 2024年第10期134-138,共5页
【目的】氧化镓是一种超宽禁带半导体,具有耐高压、耐高温、功率大、抗辐照等特性,极有可能在未来成为高功率、大电压应用领域的主导者,在全球科研与产业界引起了广泛重视。从专利角度对氧化镓材料进行分析,为相关产业的发展和专利布局... 【目的】氧化镓是一种超宽禁带半导体,具有耐高压、耐高温、功率大、抗辐照等特性,极有可能在未来成为高功率、大电压应用领域的主导者,在全球科研与产业界引起了广泛重视。从专利角度对氧化镓材料进行分析,为相关产业的发展和专利布局提供参考。【方法】基于全球相关专利数据,从专利申请趋势、专利权人排名、技术来源国、技术领域IPC分类等维度对氧化镓材料进行分析。【结结果果】揭示了氧化镓在不同国家/地区的竞争态势、技术实力及我国与国际先进水平的差距。【结论】氧化镓材料的研究主要集中在半导体器件及晶体生长方面,国内相关研究起步晚,但发展迅速。 展开更多
关键词 超宽禁带半导体 专利分析 氧化镓 技术发展 晶体生长
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顶部籽晶溶液法生长碳化硅单晶及其关键问题研究进展
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作者 顾鹏 雷沛 +2 位作者 叶帅 胡晋 吴戈 《人工晶体学报》 CAS 北大核心 2024年第5期741-759,共19页
因其优异的物理特性,第三代半导体碳化硅(SiC)材料在高温、高频、高压及大功率电力电子器件和射频微波器件领域具有非常明确的应用前景。受限于自身技术特点,利用传统的物理气相输运(PVT)法制备SiC晶体仍面临许多技术挑战,难以满足当前... 因其优异的物理特性,第三代半导体碳化硅(SiC)材料在高温、高频、高压及大功率电力电子器件和射频微波器件领域具有非常明确的应用前景。受限于自身技术特点,利用传统的物理气相输运(PVT)法制备SiC晶体仍面临许多技术挑战,难以满足当前电子器件对大尺寸、高质量和低成本SiC单晶衬底的迫切需求。顶部籽晶溶液(TSSG)法可以在更低的温度和近热力学平衡条件下实现SiC晶体制备,能够显著弥补PVT法的不足,正逐渐成为极具竞争力的低成本、高质量SiC单晶衬底创新技术之一。本文首先阐述了TSSG法生长SiC晶体的理论依据,并给出了各工艺环节要点,然后归纳了TSSG法生长SiC晶体的主要技术优势,梳理了国内外在该技术领域的研究现状并重点讨论了TSSG法生长SiC晶体关键技术问题、产生机制,以及可能的解决途径等。最后,对TSSG法生长SiC晶体的未来发展做出展望。 展开更多
关键词 第三代半导体 碳化硅单晶 顶部籽晶溶液法 晶体形貌 台阶聚集 溶剂包裹 人工智能
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Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth 被引量:1
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作者 Rui Yang Wan-qi Jie Hang Liu 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2015年第7期755-761,共7页
Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-ty... Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10^14cm^-3, a mobility of approximately 300 cm^2·V·s^-1, and a resistivity of approximately 10^2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1μm were produced on {100}, {110}, and { 111}zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity. 展开更多
关键词 semiconductor materials crystal growth electrical properties surfaces ETCHING microstructure
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Recent Developments in Functional Crystals in China 被引量:3
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作者 Jiyang Wang Haohai Yu +1 位作者 Yicheng Wu Robert Boughton 《Engineering》 SCIE EI 2015年第2期192-210,共19页
Functional crystals are the basic materials for the development of modern science and technology and are playing key roles in the modern information era. In this paper, we review functional crystals in China, includin... Functional crystals are the basic materials for the development of modern science and technology and are playing key roles in the modern information era. In this paper, we review functional crystals in China, including research history, significant achievements, and important applications by highlighting the most recent progress in research. Challenges for the development of functional materials are discussed and possible directions for development are proposed by focusing on potential strengths of these materials. 展开更多
关键词 功能晶体 中国 科学技术发展 基础材料 信息时代 功能材料
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Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal 被引量:1
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作者 刘正奇 冯天华 +5 位作者 戴峭峰 吴立军 兰胜 丁才蓉 汪河洲 Gopal Achanta Venu 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第11期441-447,共7页
This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconduct... This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconductor coreshell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated. The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements. The modification of the spontaneous emission rate, which is reflected in the change of spectral shape and PL lifetime, is clearly observed. While an obvious increase in the PL lifetime is found at most wavelengths in the band gap, a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge. Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal. It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously. This finding provides a simple and effective way for improving the performance of light emitting devices. 展开更多
关键词 spontaneous emission colloidal photonic crystal semiconductor quantum dot time-resolved photoluminescence
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Synthesis, Crystal Structure and Property of Cu Pb_2(OH)_2Cl_3 被引量:1
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作者 黄荣荣 张素允 +2 位作者 崔美艳 徐军 何长振 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2015年第4期594-598,共5页
A new copper(1)-lead(Ⅱ) oxyhalide, CuPb2(OH)2Cl3, has been prepared by hydrothermal reaction and structurally characterized by single-crystal X-ray analysis. The compound crystallizes in tetragonal, space group... A new copper(1)-lead(Ⅱ) oxyhalide, CuPb2(OH)2Cl3, has been prepared by hydrothermal reaction and structurally characterized by single-crystal X-ray analysis. The compound crystallizes in tetragonal, space group 14(1)/acd with a = b = 13.77(1), c = 15.38(1) A, V = 2916.2(2), Z = 4, Mr = 618.29, Dc = 5.633 g/cm^3,μ = 49.97(2) mm^-1, F(000) = 4192, the final R = 0.0204 and wR = 0.0452 for 757 observed reflections with I 〉 2σ(I). The structure of CuPb2(OH)2Cl3 contains one-dimensional helical chains built by CuCl4 tetrahedra with comer-sharing along the c-axis, in which the Pb^2+ and OH^- ions are located at the voids between chains. Optical reflectance spectrum measurements indicate that it is a semiconductor with a band-gap of 3.23 eV. 展开更多
关键词 oxyhalide crystal structure hydrothermal reaction semiconductor
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Detached Phenomenon and Its Effect on the Thallium Composition into InSb Bulk Crystal Grown by VDS Technique 被引量:1
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作者 Dattatray Gadkari 《材料科学与工程(中英文A版)》 2012年第9期593-601,共9页
关键词 定向凝固技术 晶体生长 锑化铟 VDS 分离 块状 组成 最佳工艺条件
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