Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).

Effective Qubit Emerging from the Nanoheterointerface Two-Dimensional Electron Gas Photodynamics

An “Eigenstate Adjustment Autonomy” Model, permeated by the Nanosystem’s Fermi Level Pinning along with its rigid Conduction Band Discontinuity, compatible with pertinent Experimental Measurements, is being employed for studying how the Functional Eigenstate of the Two-Dimensional Electron Gas (2DEG) dwelling within the Quantum Well of a typical Semiconductor Nanoheterointerface evolves versus (cryptographically) selectable consecutive Cumulative Photon Dose values. Thus, it is ultimately discussed that the experimentally observed (after a Critical Cumulative Photon Dose) Phenomenon of 2DEG Negative Differential Mobility allows for the Nanosystem to exhibit an Effective Qubit Specific Functionality potentially conducive to (Telecommunication) Quantum Information Registering.

Theoretical investigation of sulfur defects on structural, electronic,and elastic properties of ZnSe semiconductor

The structural, electronic, and elastic properties of ZnSe1-xSx for the zinc blende structures have been studied by using the density functional theory. The calculations were performed using the plane wave pseudopotential method, as implemented in Quantum ESPRESSO. The exchange-correlation potential is treated with the local density approximation pz-LDA for these properties. Moreover, LDA＋U approximation is employed to treat the ＂d＂ orbital electrons properly. A comparative study of the band gap calculated within both LDA and LDA＋U schemes is presented. The analysis of results show considerable improvement in the calculation of band gap. The inclusion of compositional disorder increases the values of all elastic constants. In this study, it is found that elastic constants C11, C12, and C44 are mainly influenced by the compositional disorder. The obtained results are in good agreement with literature.

Formulae for secondary electron yield from insulators and semiconductors

The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield(δ_m) at W_(pOm)≤ 800 eV and the secondary electron yield from insulators and semiconductors δ at the primary incident energy of 2 keV≤ W_(pO) < 10 keV(δ_(2-10)) and10 keV ≤ W_(pO)≤100 keV(δ_(10-100)) were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced formulae can be used to calculate δ_(2-100)at W_(pOm)≤ 800 eV.

First principles study on the structural, electronic and optical properties of diluted magnetic semiconductors Zn1-xCoxX （X=S, Se, Te）

The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant （about 0.6%-0.9%）. This is mainly due to the shortened Co-X bond length. The （partial） density of states （DOS） is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.

Refractive Index and Electronic Polarizability of Ternary Chalcopyrite Semiconductors

Simple models are proposed for the calculation of refractive index n and electronic polarizability α of AⅠBⅢC2Ⅵ and AⅡBⅣC2Ⅴ compounds of groups of chalcopyrite semiconductors from their energy gap data. The values family and 12 compounds of AⅡBⅣC2Ⅴ family are calculated for the work. The proposed models are applicable for the whole range of energy gap materials. The calculated values are compared with the available experimental and reported values. A fairly good agreement between them is obtained.

First-Principles Studies the Lattice Constants and the Electronic Structures of Diluted Magnetic Semiconductors (In,Mn)As

Lattice constants and electronic structures of diluted magnetic semiconductors （ In, Mn ） As were investigated using the first principles LMTO-ASA band calculation by assuming supercell structures. Three concentrations of the 3 d impurities were studied （ x = 1/2, 1/4, 1/8）. The effect of varying Mn coucentrations on the lattice constants and the electronic structures are shown.

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals,such as quantum dots and wires,which often contain tens of thousands of atoms.The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments.We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape.Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbA10 MIS-HEMT, smaller current collapse is found thorough study of the gate-drain conductance dispersion especially when the gate static voltage is -8 V. Through a it is found that the growth of NbA10 can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAIO gate dielectric can not only decrease gate leakage current but also passivate the A1GaN surface effectively, and weaken the current collapse effect accordingly.

Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.

Effects of Nonparabolicity on Electron Thermopower of Size-Quantized Semiconductor Films

Effects of nonparabolicity of energy band on thermopower, in-plane effective mass and Fermi energy are inves- tigated in size-quantized semiconductor films in a strong while non-quantized magnetic field. We obtain the expressions of these quantities as functions of thickness, concentration and nonparabolicity parameter. The influence of nonparabolicity is studied for degenerate and non-degenerate electron gases, and it is shown that nonparabolicity changes the character of thickness and the concentration dependence of thermopower, in-plane effective mass and Fermi energy. Moreover, the magnitudes of these quantities significantly increase with respect to the nonparabolicity parameter in the case of strong nonparabolicity in nano-films. The concentration depen- dence is also studied, and it is shown that thermopower increases when the concentration decreases. These results are in agreement with the experimental data.

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.

基于n型柔性半导体的有机晶体管及其电子-离子双响应特性

为了研究n型有机混合离子电子导体电子-离子双响应特性及分子量对载流子迁移率的影响,采用具有平面刚性的梯形分子链结构的高分子量聚苯并二咪唑苯并菲绕啉二酮制备高性能有机电化学晶体管,并对晶体管紫外可见吸收光谱和晶体管器件电气性能进行表征。结果表明,利用高分子量聚苯并二咪唑苯并菲绕啉二酮制备的n型有机电化学晶体管表现出极高的响应速度(0.034 s)、高载流子迁移率(4.72×10^(-3) cm^(2)/(V·s)),以及在水系电解液中优异的稳定性(稳定运行超过120次脉冲循环)。

半导体材料纳米结构性能研究

研究了半导体材料纳米结构的性能,包括电子传输性能、光学性质和热学性能,对硅和氮化镓纳米结构的电子迁移率、光学吸收与光散射特性及热导率进行测量分析。实验表明,纳米结构的性能受到尺寸效应的显著影响,硅纳米线和氮化镓纳米结构表现出优异的电子传输及光学性质。通过热导率分析发现,硅和氮化镓纳米结构在热学性能方面存在差异,对纳米结构的温度稳定性进行研究,为其在高温中的应用提供参考。

利用数据管控法提高汽车半导体器件的可靠性

本文旨在探讨如何利用数据管控法来提高半导体器件的可靠性,尤其是汽车电子系统的可靠性。本文介绍了《基于集成电路应力测试认证的失效机理(H版)》(AEC–Q100),并探讨了如何基于该标准建立模型和算法,实现对半导体器件的在线监测和故障预警,及时发现潜在隐患,剔除可靠性较低的部分器件,以有效地提高半导体器件的可靠性;最后,用案例进行验证。

制备工艺对微电子器件中CsBi_(3)I_(10)薄膜质量的影响

阐述通过一步溶液法制备微电子器件中有源层CsBi_(3)I_(10)薄膜,初步探索前驱液浓度和旋涂转速对于样品薄膜微结构的影响。实验表明,前驱液的浓度会影响薄膜表面均匀性,在其他实验条件不变的情况下,浓度过低或过高都会导致薄膜致密性较差,但是前驱液浓度对于薄膜的结晶取向和光学带隙影响不大。通过改变旋涂转速会影响溶剂的挥发速率,改变钙钛矿的结晶过程,进而导致薄膜颗粒尺寸和薄膜厚度的变化。

低维拓扑绝缘体的凝聚态之美

低维拓扑绝缘体是凝聚态物理在半导体功率器件和固体材料上的研究方向,物理学家结合凝聚态物理和拓扑学的理论,对于低维度的碲化汞(HgTe)等拓扑绝缘体的固体结构和电子自旋性质进行了探索和研究.量子自旋霍尔效应和拓扑量子双重态是低维拓扑绝缘体的两个关键性质,对于拓扑绝缘体的物质组态和能带结构的预言和发现具有重要作用,并使用强场物理的手段进行了实验的证明.低维拓扑绝缘体是凝聚态物理的前沿理论和材料应用,同时融合了数论拓扑学的理论,具有低维度的凝聚态之美.

Structural and electronic characteristics of pure and doped ZnO varistors

We report here the structural, surface morphology, mechanical, and current voltage characteristics of Zn1-xMxO ceramic samples with various x and M （0.00≤〈 x ≤ 0.20, M = Ni, Cu）. It is found that the considered dopants do not influence the well-known peaks related to the wurtzite structure of ZnO ceramics, while the shapes and the sizes of grains are clearly affected. The average crystalline diameters deduced from the SEM micrographs are between 2.06 μm and 4.8 μm for all samples. The oxygen element ratio is increased by both dopants. Interestingly, the potential barrier can be formed by adding Cu up to 0.20, while it is completely deformed by 0.025 Ni addition. The breakdown field can be enhanced up to 4138 V/cm by 0.025 Cu addition, followed by a decrease with further increase of Cu up to 0.20. On the other hand, a gradual decrease in Vickers microhardness is reported for both dopants, and the values in the Ni samples are higher compared to those in the Cu samples. The electricul conductivity is generally improved by Ni, while the addition of Cu improves it only in the over doped region （≥ 0.10）. These results are discussed in terms of the differences of valency and ferromagnetic ordering.

Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures

The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm^-2 at the donor density of 10×1018 cm^-3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.