Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo-MXene/Mo-Metal Sulfides for Electromagnetic Response

The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave(EMW)absorption materials.However,the loss mechanism in traditional heterostructures is relatively simple,guided by empirical observations,and is not monotonous.In this work,we presented a novel semiconductor-semiconductor-metal heterostructure sys-tem,Mo-MXene/Mo-metal sulfides(metal=Sn,Fe,Mn,Co,Ni,Zn,and Cu),including semiconductor junctions and Mott-Schottky junctions.By skillfully combining these distinct functional components(Mo-MXene,MoS_(2),metal sulfides),we can engineer a multiple heterogeneous interface with superior absorption capabilities,broad effective absorption bandwidths,and ultrathin matching thickness.The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer,as confirmed by density functional theory,which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption.We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces.The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide,which achieved remarkable reflection loss values of-70.6 dB at a matching thickness of only 1.885 mm.Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology.This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.

Anomalous Direct-Current Josephson Effect in Semiconductor Nanowire Junctions

We investigate the dc Josephson effect in one-dimensional junctions where a ring conductor is sandwiched between two semiconductor nanowires with proximity-induced superconductivity. Peculiar features of the Josephson effect arise due to the interplay of spin-orbit interaction and external Zeenmn field. By tuning the Zeeman field orientation, the device can vary from 0 to π junction. Afore importantly, nonzero ,losephson current is possible at zero phase difference across the junction. Although this anomalous Josephson current is not relevant to the topological phase transition, its magnitude can be significantly enhanced whe, n the nanowire, s become topological superconductors where Majorana bound states emerge. Distinct modulation patterns are obtained for the semiconductor nanowires in the topologically trivial and non-trivial phases. These results are useful to probe the topological phase transition in semiconductor nanowire junctions via the dc Josephson effect.

Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling

We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase（or decrease） with the decrease（or increase） of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.

Characterization of sputtering CoFe-ITO junction for spin injection

The combination of ferromagnetic metal(FM)and semiconductor(SC)for spin injection was studied and demonstrated with FM-SC-FM junction.The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO).Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited.The ITO single-layer film was n-type with a small resistance of about 100Ω/Square.I-V curves and Magnetoresistance(MR)effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K.Results show that the CoFe forms an ohmic contact to ITO film.But at low temperature,the I-V curves show a Schottky-like characteristic,which is strongly affect by applied magnetic field.The MR effect was measured to be 1%at 77 K,which indicates a spin injection into semiconductor to be realized in this sandwich junction.

Enhancing water splitting via weakening H_(2) and O_(2) adsorption on NiCo-LDH@CdS due to interstitial nitrogen doping: A close look at the mechanism of electron transfer

This paper is a report on the development of a convenient approach to fabricating a very efficient hybrid photoelectrocatalyst for water splitting.This photoelectrocatalyst consists of nickel-cobalt layered double hydroxide as the core,cadmium sulfide as the shell,and nitrogen,hence NiCo-LDH@CdS-N.For the electrocatalytic activity to be improved,the H_(2) and O_(2) binding energy needs to be weakened.The interstitial nitrogen doping on NiCo-LDH@CdS can increase electrocatalytic activity to a great extent.NiCoLDH@CdS nanoparticles are obtained by subjecting to nitriding the NiCo-LDH@CdS electrode coated with polyvinylpyrrolidone nanosheets.This electrode has a large specific surface area,allows fast transfer of electrons,and exhibits long-term stability.The experimental results presented in this paper reveal that interstitial nitrogen doping largely reduces H_(2) and O_(2) binding energy and lowers the activation barrier for the formation and splitting of water.

Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

A novel photosensitive hybrid field-effect transistor （FET） which consists of a multiple-shell of organic porphyrin film/oxide/silicon nanowires is presented. Due to the oxide shell around the nanowires, photoswitching of the current in the hybrid nanodevices is guided by the electric field effect, induced by charge redistribution within the organic film. This principle is an alternative to a photoinduced electron injection, valid for devices relying on direct junctions between organic molecules and metals or semiconductors. The switching dynamics of the hybrid nanodevices upon violet light illumination is investigated and a strong dependence on the thickness of the porphyrin film wrapping the nanowires is found. Furthermore, the thickness of the organic films is found to be a crucial parameter also for the switching efficiency of the nanowire FET, represented by the ratio of currents under light illumination （ON） and in dark conditions （OFF）. We suggest a simple model of porphyrin film charging to explain the optoelectronic behavior of nanowire FETs mediated by organic film/oxide/semiconductor junctions.

Function-switchable metal/semiconductor junction enables efficient photocatalytic overall water splitting with selective water oxidation products

A novel metal/semiconductor photocatalyst,Cu nanoparticles(NPs)modified TiO2 hollow spheres(Cu/TiO2),was designed for efficient photocatalytic overall water splitting(POWS)under both ultraviolet(UV)and visible(Vis)light.This Cu/TiO2 photocatalyst possesses excellent POWS performance under Vis light at the highest level among the reported TiO2-based photocatalysts.Interestingly,the metal/semiconductor junction formed between Cu and TiO2 enables controlled water-oxidation product selectivity(H2O2 or O2)via different reaction pathways regulated by irradiation wavelengths.Under UV light,the electrons excited in TiO2 are captured by Cu NPs through the Cu/TiO2 Schottky interface for H2 production,with the photoholes in TiO2 producing H2O2 through a two-electron process;whilst under Vis light,Cu NPs act as plasmon to inject hot electrons to TiO2 for H2 production,while O2 is produced by hot holes on Cu NPs via a four-electron process.This rational design of function-switchable metal/semiconductor junction may be helpful to understand the mechanisms for POWS with desired gas/liquid water-oxidation products.

Design and fabrication of 1-D semiconductor nanomaterials for high-performance photovoltaics

To date, the cost-effective utilization of solar energy by photovoltaics for large-scale deployment remains challenging. Further cost minimization and efficiency maximization, through reduction of material consumption, simplification of device fabrication as well as optimization of device structure and geometry, are required. The usage of 1D nanomaterials is attractive due to the outstanding light coupling effect, the ease of fabrication, and integration with one-dimensional(1-D) semiconductor materials. The light absorption efficiency can be enhanced significantly, and the corresponding light-toelectricity conversion efficiency can be as high as their bulk counterparts. Also, the amount of active materials used can be reduced. This review summarizes the recent development of 1-D nanomaterials for photovoltaic applications, including the anti-reflection, the light absorption,the minority diffusion, and the semiconductor junction properties. With solid progress and prospect shown in the past 10 years, 1-D semiconductor nanomaterials are attractive and promising for the realization of high-efficiency and low-cost solar cells.

Concept and design of super junction devices

The super junction（SJ） has been recognized as the ＂milestone＂ of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer（VSL）. The basic structure of the SJ is a typical junction-type VSL（J-VSL） with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL（R-VSL） with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the JVSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional＂silicon limit＂ relationship of R_（on）∝V_B^（2.5）, showing a quasi-linear relationship of R_（on）∝V_B^（1.03）.

High performance of hot-carrier generation,transport and injection in TiN/TiO_(2)junction

Improving the performance of generation,transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications.However,the conversion efficiency of hot carriers in the commonly used noble metals(e.g.,Au)is extremely low.Herein,through a systematic study by first-principles calculation and Monte Carlo simulation,we show that TiN might be a promising plasmonic material for high-efficiency hot-carrier applications.Compared with Au,TiN shows obvious advantages in the generation(high density of low-energy hot electrons)and transport(long lifetime and mean free path)of hot carriers.We further performed a device-oriented study,which reveals that high hotcarrier injection efficiency can be achieved in core/shell cylindrical TiN/TiO_(2)junctions.Our findings provide a deep insight into the intrinsic processes of hot-carrier generation,transport and injection,which is helpful for the development of hot-carrier devices and applications.

A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy （MBE）. The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GalnP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing Ⅲ-V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.