The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
We report a method to reduce the detection delay temperature drift for a single-photon detector based on the avalanche photodiode(SPAD). Both the SPAD and the comparator were temperature stabilized, resulting in an ul...We report a method to reduce the detection delay temperature drift for a single-photon detector based on the avalanche photodiode(SPAD). Both the SPAD and the comparator were temperature stabilized, resulting in an ultra-low temperature drift at 0.01 ps/°C. A stable time deviation as 0.15 ps over 1000 s was realized, while the ambient temperature fluctuated rapidly from 24°C to 44°C. To the best of our knowledge, this is the first report on the ultra-stable delay SPAD detector in the case of rapid increase or decrease of ambient temperature. It is helpful to improve the stability of onboard detectors for optical laser time transfer between ground and space.展开更多
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain,high sensitivity,fast response,small vol-ume,and ease of int...Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain,high sensitivity,fast response,small vol-ume,and ease of integration.The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present.Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits.This paper analyzes the latest development and application of these InGaAs/InP photodiodes,then briefly re views other near-infrared single-photon detection technologies based on new materials and new mechanisms.展开更多
The past decade has witnessed a dramatic increase in interest in emerging photodetectors built from two-dimensional(2D)layered materials.A major driver of this trend is the growing demands for lightweight,uncooled,and...The past decade has witnessed a dramatic increase in interest in emerging photodetectors built from two-dimensional(2D)layered materials.A major driver of this trend is the growing demands for lightweight,uncooled,and even flexible photodetection technology.However,2D layered materials always suffer from low light absorption coefficients due to their atomically thin nature.Impact ionization,which can achieve carrier multiplication,is a promising strategy to design 2D photodetectors with high detection efficiency.In this review,typical types of photodetection mechanisms in 2D photodetectors are first summarized.We then discuss the avalanche mechanism induced by impact ionization and avalanche photodetectors based on conventional silicon and III–V compound semiconductors.Finally,a host of emerging avalanche photodetectors based on 2D materials and their van der Waals heterostructures,and their potential applications in the field of photon-counting technologies are detailed.By reviewing the recent progress and discussing challenges faced by 2D avalanche photodetectors,this review aims to provide perspectives on future research directions of 2D material-based ultrasensitive photodetectors such as single-photon detectors.展开更多
Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the pa...Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size,low cost and easy operation.In the past decade,the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques.This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications,and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes.Future perspectives of both the devices and quenching techniques are summarized.展开更多
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
基金supported by the National Key R&D Program of China (No.2016YFB0400904)National Natural Science Foundation of China (Nos.11774095,11804099,and 11621404)+1 种基金Shanghai Basic Research Project (No.18JC1412200)Program of Introducing Talents of Discipline to Universities (No.B12024)。
文摘We report a method to reduce the detection delay temperature drift for a single-photon detector based on the avalanche photodiode(SPAD). Both the SPAD and the comparator were temperature stabilized, resulting in an ultra-low temperature drift at 0.01 ps/°C. A stable time deviation as 0.15 ps over 1000 s was realized, while the ambient temperature fluctuated rapidly from 24°C to 44°C. To the best of our knowledge, this is the first report on the ultra-stable delay SPAD detector in the case of rapid increase or decrease of ambient temperature. It is helpful to improve the stability of onboard detectors for optical laser time transfer between ground and space.
基金supported by the Major Science and Technology Project of Yunnan province(Grant No.2018ZI002)。
文摘Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain,high sensitivity,fast response,small vol-ume,and ease of integration.The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present.Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits.This paper analyzes the latest development and application of these InGaAs/InP photodiodes,then briefly re views other near-infrared single-photon detection technologies based on new materials and new mechanisms.
文摘The past decade has witnessed a dramatic increase in interest in emerging photodetectors built from two-dimensional(2D)layered materials.A major driver of this trend is the growing demands for lightweight,uncooled,and even flexible photodetection technology.However,2D layered materials always suffer from low light absorption coefficients due to their atomically thin nature.Impact ionization,which can achieve carrier multiplication,is a promising strategy to design 2D photodetectors with high detection efficiency.In this review,typical types of photodetection mechanisms in 2D photodetectors are first summarized.We then discuss the avalanche mechanism induced by impact ionization and avalanche photodetectors based on conventional silicon and III–V compound semiconductors.Finally,a host of emerging avalanche photodetectors based on 2D materials and their van der Waals heterostructures,and their potential applications in the field of photon-counting technologies are detailed.By reviewing the recent progress and discussing challenges faced by 2D avalanche photodetectors,this review aims to provide perspectives on future research directions of 2D material-based ultrasensitive photodetectors such as single-photon detectors.
基金We acknowledge Wen-Hao Jiang for technical assistance.This work has been financially supported by the National Basic Research Program of China(Grant No.2013CB336800)the National High-Tech R&D Program(Grant No.2011AA010802)+1 种基金the National Natural Science Foundation of China(Grant No.61275121)the Innovative Cross-disciplinary Team Program of CAS.HZ acknowledges the financial support from the Swiss NCCR QSIT.
文摘Single-photon detectors(SPDs)are the most sensitive instruments for light detection.In the near-infrared range,SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size,low cost and easy operation.In the past decade,the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques.This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications,and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes.Future perspectives of both the devices and quenching techniques are summarized.