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A Possible Relationship between Schottky Barrier Heights andAdhesion Energies of Metal / Semiconductor or Insulator Interfaces
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作者 李建国 《Rare Metals》 SCIE EI CAS CSCD 1994年第1期7-12,共6页
A possible relationship between Schottky barrier heights and adhesion energies of different nonreactivemetal/semiconductor or insulator interfaces is presented .Various experimental evidences further sup-porting such ... A possible relationship between Schottky barrier heights and adhesion energies of different nonreactivemetal/semiconductor or insulator interfaces is presented .Various experimental evidences further sup-porting such a relationship are briefly exploited. The consequence indicated by such a relationship on the understanding of metal / ceramic interfaces is stressed. 展开更多
关键词 Schottky barrier heights Adhesion energies Metal/ semiconductorinterfaces
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