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Computationally predicting spin semiconductors and half metals from doped phosphorene monolayers
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作者 Jing-Hua Feng Geng Li +4 位作者 Xiang-Fei Meng Xiao-Dong Jian Zhen-Hong Dai Yin-Chang Zhao Zhen Zhou 《Frontiers of physics》 SCIE CSCD 2019年第4期101-107,共7页
First-principles computations are performed to investigate phosphorene monolayers doped with 30 metal and nonmetal atoms. The binding energies indicate the stability of all doped configurations. Interestingly, the mag... First-principles computations are performed to investigate phosphorene monolayers doped with 30 metal and nonmetal atoms. The binding energies indicate the stability of all doped configurations. Interestingly, the magnetic atom Co doping induces the absence of the magnetism while the magnetism is realized in phosphorene with substitutional doping of nonmagnetic atoms (O, S, Se, Si, Br, and Cl). The magnetic moment of transition metal (TM)-doped systems is suppressed in the range of 1.0-3.97μB.The electronic properties of the doped systems are modulated differently;O, S, Se, Ni, and Ti doped systems become spin semiconductors, while V doping makes the system a half metal. These results demonstrate potential applications of functionalized phosphorene with external atoms, in particular to spintronics and dilute magnetic semiconductors. 展开更多
关键词 phosphorene SPIN semiconductots HALF METALS DENSITY FUNCTIONAL theory
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