Most modern microprocessors have one or two levels of on-chip caches to make things run faster,but this is not always the case.Most of the time,these caches are made of static random access memory cells.They take up a...Most modern microprocessors have one or two levels of on-chip caches to make things run faster,but this is not always the case.Most of the time,these caches are made of static random access memory cells.They take up a lot of space on the chip and use a lot of electricity.A lot of the time,low power is more important than several aspects.This is true for phones and tablets.Cache memory design for single bit architecture consists of six transistors static random access memory cell,a circuit of write driver,and sense amplifiers(such as voltage differential sense amplifier,current differential sense amplifier,charge transfer differential sense amplifier,voltage latch sense amplifier,and current latch sense amplifier,all of which are compared on different resistance values in terms of a number of transistors,delay in sensing and consumption of power.The conclusion arises that single bit six transistor static random access memory cell voltage differential sense amplifier architecture consumes 11.34μW of power which shows that power is reduced up to 83%,77.75%reduction in the case of the current differential sense amplifier,39.62%in case of charge transfer differential sense amplifier and 50%in case of voltage latch sense amplifier when compared to existing latch sense amplifier architecture.Furthermore,power reduction techniques are applied over different blocks of cache memory architecture to optimize energy.The single-bit six transistors static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique consumes 8.078μW of power,i.e.,reduce 28%more power that makes single bit six transistor static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique more energy efficient.展开更多
With the rapid development of integrated circuits [1], low power consumption has become a constant pursuiting goal of the designer in chip design. As the memory almost takes up the area of the chip, reducing memory po...With the rapid development of integrated circuits [1], low power consumption has become a constant pursuiting goal of the designer in chip design. As the memory almost takes up the area of the chip, reducing memory power consumption will significantly reduce the overall power consumption of the chip;according to ISSCC’s 2014 report about technology trends discussions, there two points of the super-low power SRAM design: 1) design a more effective static and dynamic power control circuit for each key module of SRAM;2) ensure that in the case of the very low VDD min, SRAM can operating reliably and stably. This paper makes full use reliable of 8T cell, and the single-port sense amplifier has solved problems in the traditional 8T cell structure, making the new structure of the memory at a greater depth still maintain good performance and lower power consumption. Compared with the designed SRAM the SRAM generated by commercial compiler, as the performance loss at SS corner does not exceed 10%, the whole power consumption could be reduced by 54.2%, which can achieve a very good effect of low-power design.展开更多
A real time multiprocessor chip paradigm is also called a Network-on-Chip (NoC) which offers a promising architecture for future systems-on-chips. Even though a lot of Double Tail Sense Amplifiers (DTSA) are used in a...A real time multiprocessor chip paradigm is also called a Network-on-Chip (NoC) which offers a promising architecture for future systems-on-chips. Even though a lot of Double Tail Sense Amplifiers (DTSA) are used in architectural approach, the conventional DTSA with transceiver exhibits a difficulty of consuming more energy and latency than its intended design during heavy traffic condition. Variable Energy aware sense amplifier Link for Asynchronous NoC (VELAN) is designed in this research to eliminate the difficulty, which is the combination of Variable DTSA circuitry (V-DTSA) and Transceiver. The V-DTSA circuitry has following components such as bootable DTSA (B-DTSA) and bootable clock gating DTSA (BCG-DTSA), Graph theory based Traffic Estimator (GTE) and controller. Depending upon the traffic rate, the controller activates necessary DTSA modules and transfers information to the receiver. The proposed VELAN design is evaluated on TSMC 90 nm technology, showing 6.157 Gb/s data rate, 0.27 w total link power and 354 ps latency for single stage operation.展开更多
针对根系探地雷达数据重构中计算复杂和准确率低的问题,提出粒子群(PSO)与模拟退火(SA)相结合的正交匹配追踪(OMP)优化算法。首先,由Gabor原子对信号进行稀疏表示,建立求解空间;然后,以匹配函数为适应度,通过PSO算法求出匹配函数的最佳...针对根系探地雷达数据重构中计算复杂和准确率低的问题,提出粒子群(PSO)与模拟退火(SA)相结合的正交匹配追踪(OMP)优化算法。首先,由Gabor原子对信号进行稀疏表示,建立求解空间;然后,以匹配函数为适应度,通过PSO算法求出匹配函数的最佳适应度值,找出可行解原子,再利用SA算法对PSO极值进行退温搜索,得出全局最优原子;最后,利用最优原子完成根系稀疏数据的重构。对A-scan数据和B-scan数据进行实验,结果表明,PSO-SA-OMP算法比传统OMP算法的计算时间减少了10.471 s和20.260 s,均方误差减小了1.225,信噪比提高了5.539 d B。展开更多
存内计算(Computing In Memory,CIM)在人工智能神经网络的卷积运算方面具有巨大的应用潜力。基于忆阻器阵列的多位存内计算由于具备写入速度快、与互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺兼容等特点,...存内计算(Computing In Memory,CIM)在人工智能神经网络的卷积运算方面具有巨大的应用潜力。基于忆阻器阵列的多位存内计算由于具备写入速度快、与互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺兼容等特点,有望成为解决“内存墙”的有效手段。然而,当前多位存内计算电路架构面临输出延时高和能耗大的问题,主要原因为传统感知放大器的性能制约,为此本文提出了一种低延时低能耗多位电流型感知放大器(Low-delay Low-power Multi-bit Current-mode Sense Amplifier,LLM-CSA),通过减少传统CSA电路工作状态数量、简化工作时序来优化功能;采用新型低位检测模块的电路设计思路,来多层次系统性地降低输出延时并优化能耗。使用中芯国际40 nm低漏电逻辑工艺(SMIC40 nm LL),利用Cadence电路设计平台,仿真验证所提LLM-CSA的功能和延时-能耗性能。通过对比分析发现:LLM-CSA比传统CSA输出延时降低1.42倍,能量消耗降低1.56倍。进一步地,以一种4 bit输入、4 bit权重、11 bit输出的忆阻器阵列多位存内计算架构为应用,对比验证所提LLM-CSA的性能:与基于传统CSA的存内计算系统相比,新架构延时降低1.18倍,能耗降低1.03倍。LLM-CSA的提出对促进感知放大器设计思路和忆阻器阵列存内计算架构的发展,具有一定的理论和现实意义。展开更多
In the novel prototype of micro-gyroscope structure,the new configured capacitance sensing scheme for the micro gyroscope was analyzed and the virtual instrument based detection scheme was implemented.The digital lock...In the novel prototype of micro-gyroscope structure,the new configured capacitance sensing scheme for the micro gyroscope was analyzed and the virtual instrument based detection scheme was implemented.The digital lock-in amplifier was employed in the capacitance detection to restrain the noise interference.The capacitance analysis shows that 1 fF capacitance variation corresponds to 0.1 degree of the turn angle.The differential capacitance bridge and the charge integral amplifier were used as the front signal input interface.In the implementation of digital lock-in amplifier,a new routine which warranted the exactly matching of the reference phase to signal phase was proposed.The result of the experiment shows that digital lock-in amplifier can greatly eliminate the noise in the output signal.The non linearity of the turn angle output is 2.3% and the minimum resolution of turn angle is 0.04 degrees.The application of the software demodulation in the signal detection of micro-electro-mechanical-system(MEMS)device is a new attempt,and it shows the prospective for a high-performance application.展开更多
基金Research General Direction funded this research at Universidad Santiago de Cali,Grant Number 01-2021 and APC was funded by 01-2021.
文摘Most modern microprocessors have one or two levels of on-chip caches to make things run faster,but this is not always the case.Most of the time,these caches are made of static random access memory cells.They take up a lot of space on the chip and use a lot of electricity.A lot of the time,low power is more important than several aspects.This is true for phones and tablets.Cache memory design for single bit architecture consists of six transistors static random access memory cell,a circuit of write driver,and sense amplifiers(such as voltage differential sense amplifier,current differential sense amplifier,charge transfer differential sense amplifier,voltage latch sense amplifier,and current latch sense amplifier,all of which are compared on different resistance values in terms of a number of transistors,delay in sensing and consumption of power.The conclusion arises that single bit six transistor static random access memory cell voltage differential sense amplifier architecture consumes 11.34μW of power which shows that power is reduced up to 83%,77.75%reduction in the case of the current differential sense amplifier,39.62%in case of charge transfer differential sense amplifier and 50%in case of voltage latch sense amplifier when compared to existing latch sense amplifier architecture.Furthermore,power reduction techniques are applied over different blocks of cache memory architecture to optimize energy.The single-bit six transistors static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique consumes 8.078μW of power,i.e.,reduce 28%more power that makes single bit six transistor static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique more energy efficient.
文摘With the rapid development of integrated circuits [1], low power consumption has become a constant pursuiting goal of the designer in chip design. As the memory almost takes up the area of the chip, reducing memory power consumption will significantly reduce the overall power consumption of the chip;according to ISSCC’s 2014 report about technology trends discussions, there two points of the super-low power SRAM design: 1) design a more effective static and dynamic power control circuit for each key module of SRAM;2) ensure that in the case of the very low VDD min, SRAM can operating reliably and stably. This paper makes full use reliable of 8T cell, and the single-port sense amplifier has solved problems in the traditional 8T cell structure, making the new structure of the memory at a greater depth still maintain good performance and lower power consumption. Compared with the designed SRAM the SRAM generated by commercial compiler, as the performance loss at SS corner does not exceed 10%, the whole power consumption could be reduced by 54.2%, which can achieve a very good effect of low-power design.
文摘A real time multiprocessor chip paradigm is also called a Network-on-Chip (NoC) which offers a promising architecture for future systems-on-chips. Even though a lot of Double Tail Sense Amplifiers (DTSA) are used in architectural approach, the conventional DTSA with transceiver exhibits a difficulty of consuming more energy and latency than its intended design during heavy traffic condition. Variable Energy aware sense amplifier Link for Asynchronous NoC (VELAN) is designed in this research to eliminate the difficulty, which is the combination of Variable DTSA circuitry (V-DTSA) and Transceiver. The V-DTSA circuitry has following components such as bootable DTSA (B-DTSA) and bootable clock gating DTSA (BCG-DTSA), Graph theory based Traffic Estimator (GTE) and controller. Depending upon the traffic rate, the controller activates necessary DTSA modules and transfers information to the receiver. The proposed VELAN design is evaluated on TSMC 90 nm technology, showing 6.157 Gb/s data rate, 0.27 w total link power and 354 ps latency for single stage operation.
文摘针对根系探地雷达数据重构中计算复杂和准确率低的问题,提出粒子群(PSO)与模拟退火(SA)相结合的正交匹配追踪(OMP)优化算法。首先,由Gabor原子对信号进行稀疏表示,建立求解空间;然后,以匹配函数为适应度,通过PSO算法求出匹配函数的最佳适应度值,找出可行解原子,再利用SA算法对PSO极值进行退温搜索,得出全局最优原子;最后,利用最优原子完成根系稀疏数据的重构。对A-scan数据和B-scan数据进行实验,结果表明,PSO-SA-OMP算法比传统OMP算法的计算时间减少了10.471 s和20.260 s,均方误差减小了1.225,信噪比提高了5.539 d B。
基金The National Natural Science Foundation ofChina(No.60402003)The National High Technology Research and Development Pro-gram of China(863Program)(No.2002AA745120)
文摘In the novel prototype of micro-gyroscope structure,the new configured capacitance sensing scheme for the micro gyroscope was analyzed and the virtual instrument based detection scheme was implemented.The digital lock-in amplifier was employed in the capacitance detection to restrain the noise interference.The capacitance analysis shows that 1 fF capacitance variation corresponds to 0.1 degree of the turn angle.The differential capacitance bridge and the charge integral amplifier were used as the front signal input interface.In the implementation of digital lock-in amplifier,a new routine which warranted the exactly matching of the reference phase to signal phase was proposed.The result of the experiment shows that digital lock-in amplifier can greatly eliminate the noise in the output signal.The non linearity of the turn angle output is 2.3% and the minimum resolution of turn angle is 0.04 degrees.The application of the software demodulation in the signal detection of micro-electro-mechanical-system(MEMS)device is a new attempt,and it shows the prospective for a high-performance application.
