The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating...The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating principle,measuring method and measured results of F<sup>-</sup>-ISFET are given.The measured results show thatthis kind of sensor has higher sensitivity,shorter response time and better linearity.On the basisof experimental results,the factor of influencing the steadiness and repeatability of F<sup>-</sup>-ISFETare conjectured.展开更多
文摘The fluorine ion sensitive field-effect transistor（F<sup>-</sup>-ISFET）is made by depositingvery thin LaF<sub>3</sub> film on grid of field-effect transistor with sputter method.The operating principle,measuring method and measured results of F<sup>-</sup>-ISFET are given.The measured results show thatthis kind of sensor has higher sensitivity,shorter response time and better linearity.On the basisof experimental results,the factor of influencing the steadiness and repeatability of F<sup>-</sup>-ISFETare conjectured.
