Numerical simulation of the effect of the anode magnetic shielding on the magnetic field and ion beam in a cylindrical Hall thruster is presented. The results show that after the anode is shielded by the magnetic shie...Numerical simulation of the effect of the anode magnetic shielding on the magnetic field and ion beam in a cylindrical Hall thruster is presented. The results show that after the anode is shielded by the magnetic shield, the magnetic field lines near the anode surface are obviously convex curved, the ratio of the magnetic mirror is enhanced, the width of the positive magnetic field gradient becomes larger than that without the anode magnetic shielding, the radial magnetic field component is enhanced, and the discharge plasma turbulence is reduced as a result of keeping the original saddle field profile and the important role the other two saddle field profiles play in restricting electrons. The results of the particle in cell （PIC） numerical simulation show that both the ion number and the energy of the ion beam increase after the anode is shielded by the magnetic shield. In other words, the specific impulse of the cylindrical Hall thruster is enhanced.展开更多
A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductiv...A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.展开更多
基金supported by National Natural Science Foundation of China (No. 10675040)College Scientific Research and Development Fund (No. C122009015) of China
文摘Numerical simulation of the effect of the anode magnetic shielding on the magnetic field and ion beam in a cylindrical Hall thruster is presented. The results show that after the anode is shielded by the magnetic shield, the magnetic field lines near the anode surface are obviously convex curved, the ratio of the magnetic mirror is enhanced, the width of the positive magnetic field gradient becomes larger than that without the anode magnetic shielding, the radial magnetic field component is enhanced, and the discharge plasma turbulence is reduced as a result of keeping the original saddle field profile and the important role the other two saddle field profiles play in restricting electrons. The results of the particle in cell （PIC） numerical simulation show that both the ion number and the energy of the ion beam increase after the anode is shielded by the magnetic shield. In other words, the specific impulse of the cylindrical Hall thruster is enhanced.
基金Project supported by the National Natural Science Foundation of China(Nos.60876053,60806025,60976060).
文摘A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.
