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短波长In_xGa_(1-x)As_yP_(1-y)材料的LP-MOVPE生长 被引量:1
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作者 安海岩 杨树人 +2 位作者 秦福文 王本忠 刘式墉 《吉林大学自然科学学报》 CAS CSCD 1994年第3期62-66,共5页
本文研究了用低压金属有机化学气相外延(LP-MOVPE)技术,以三申基镓(TMGa)、三甲基铟(TMIn)为Ⅲ族源,AsH_3和PH_3为Ⅴ族源,在(100)方向掺S的n ̄+InP衬底上生长短波长In_xGa_(1-... 本文研究了用低压金属有机化学气相外延(LP-MOVPE)技术,以三申基镓(TMGa)、三甲基铟(TMIn)为Ⅲ族源,AsH_3和PH_3为Ⅴ族源,在(100)方向掺S的n ̄+InP衬底上生长短波长In_xGa_(1-x)As_yP_(1-y)材料的生长条件,并用双晶X射线衍射(DCD)和光荧光(PL)对不同条件下生长的短波长In_xGa_(1-x)As_yP_(1-y)材料进行了表征。 展开更多
关键词 量子阱 激光器 垒材料 LP-MOVPE
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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes 被引量:1
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作者 梁德春 安琪 +4 位作者 金鹏 李新坤 魏恒 吴巨 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第10期486-490,共5页
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full widt... This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quan- tum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices. 展开更多
关键词 InAiGaAs quantum dot superluminescent diode optical coherence tomography shortwavelength
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Ge/Si_(x)Ge_(1-x)衬底620 nm半导体激光器的特性
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作者 林涛 解佳男 +5 位作者 穆妍 李亚宁 孙婉君 张霞霞 杨莎 米帅 《激光与光电子学进展》 CSCD 北大核心 2022年第19期227-233,共7页
短波长红光激光是激光显示、生物医学等应用领域急需开发的一种新波段光源。基于Ge/Si_(x)Ge_(1-x)衬底设计并模拟分析了一种波长为620 nm的红光半导体激光器。该激光器使用Ge衬底以及Si_(x)Ge_(1-x)基体层,通过改变Si_(x)Ge_(1-x)层中... 短波长红光激光是激光显示、生物医学等应用领域急需开发的一种新波段光源。基于Ge/Si_(x)Ge_(1-x)衬底设计并模拟分析了一种波长为620 nm的红光半导体激光器。该激光器使用Ge衬底以及Si_(x)Ge_(1-x)基体层,通过改变Si_(x)Ge_(1-x)层中的Si摩尔分数调整激光器结构中每层AlGaInP系材料的晶格常数,从而实现高Ga摩尔分数的GaInP量子阱并将GaInP量子阱的激光波长缩短至620 nm。通过计算SiGe、AlGaInP系材料的物理参数,研究了GaInP量子阱有源区结构和Si_(x)Ge_(1-x)基体层组分对输出特性的影响规律,优化了激光器的结构参数。模拟结果表明,298 K温度下设计的激光器输出波长为620 nm,阈值电流为0.58 A,输出功率为1.20 W,转换效率为38.3%。 展开更多
关键词 激光器 半导体激光器 短波长红光激光 晶格调制 Ge/Si_(x)Ge_(1-x)衬底
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Short-wavelength static optical recording properties of subphthalocyanine thin films 被引量:2
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作者 Yang Wang Fuxi Gan 《Chinese Science Bulletin》 SCIE EI CAS 2001年第23期2013-2015,共3页
The static optical recording properties of novel bromoboron trinitro-subphthalocyanine (BTN-SubPc) thin films were studied using a self-developed short-wavelength optical disk tester with high NA objective lens. High ... The static optical recording properties of novel bromoboron trinitro-subphthalocyanine (BTN-SubPc) thin films were studied using a self-developed short-wavelength optical disk tester with high NA objective lens. High reflectivity contrast (】30%) was obtained at low writing power (8 mW) and short writing pulsewidth (200 ns) using the Ar+ laser (514.5 nm) irradiation. These results demonstrate thatsubphthalocyanine is not only qualified for red-light recording but also a promising candidate for the recording medium of a green-light DVD-R. The leading edge, just like the falling edge, of the dye’s absorption band can also be used to realize optical disk storage if an appropriate reflector was used. It provides a new clew for double-wavelength writing/reading and choosing short-wavelength recording materials. 展开更多
关键词 bromoboron trinitro-subphthalocyanine THIN film short- WAVELENGTH HIGH-DENSITY optical recording.
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