Corrective Effect of the Angle of Incidence of the Magnetic Field Intensity on the Performance (Series and Shunt Resistances) of a Bifacial Silicon Solar Cell

This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.

Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p-n junction in solar cell

Shunt can drastically decrease the solar cell conversion efficiency and its current measurement result only reflects the overall shunting effect of all shunts in a whole cell.In order to accurately characterize local shunts caused by the penetration of front contacts through the emitter junction, silicon solar cells with a new structure named beam bridge contact were fabricated.The result showed that the region under the emitter was more badly shunted than the other emitter regions.The sample preparation process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience.The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

Measuring Method for Shunt Resistance of Solar Cell

Shunt resistance of solar cell must be monitored for large area solar cell manufactured with conventional process.A measuring method for the shunt resistance is derived from direct-current model.The shunt resistance of solar cell is obtained only by treating a part of I-V data.

Suppressing Leakage Currents and Improving Performance of Indoor Organic Photovoltaic Devices

Organic photovoltaic(OPV) devices hold great promise for indoor light harvesting,offering a theoretical upper limit of power conversion efficiency that surpasses that of other photovoltaic technologies.However,the presence of high leakage currents in OPV devices commonly constrains their effective performance under indoor conditions.In this study,we identified that the origin of the high leakage currents in OPV devices lay in pinhole defects present within the active layer(AL).By integrating an automated spin-coating strategy with sequential deposition processes,we achieved the compactness of the AL and minimized the occurrence of pinhole defects therein.Experimental findings demonstrated that with an increase in the number of deposition cycles,the density of pinhole defects in the AL underwent a marked reduction.Consequently,the leakage current experienced a substantial decrease by several orders of magnitude which achieved through well-calibrated AL deposition procedures.This enabled a twofold enhancement in the power conversion efficiency(PCE) of the OPV devices under conditions of indoor illumination.

Impact of Parasitic Resistances on the Output Power of a Parallel Vertical Junction Silicon Solar Cell

This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt (Rsh) and series (Rs) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.

Determination of the Electrical Parameters of a Solar Cell in Steady State

Photovoltaic solar energy can be obtained by using several types of technologies, including silicon solar cells. The characterization of its solar cells makes it possible to know them better. This article presents, on the one hand, the work that has been carried out on these cells. On the other hand, a theoretical study of the cell under illumination using Lambert’s W function. On the basis of the electrical parameters provided by the manufacturer, the parameters such as the series and shunt resistances and the electrical quantities such as the photocurrent and the photovoltage, are determined and studied according to the ideality factor of the diode. From the results obtained the shunt resistance increases when the ideality factor increases, the series resistance decreases very weakly.

Performance Analysis of a Radial N+/P Silicon Solar Cell in Steady State and Monochromatic Illumination

In this paper, we investigate theoretically a radial n+/p silicon solar cell in steady state and monochromatic illumination. The purpose of this work is to analyze the effect of the cell base radius on its electrical parameters. The continuity equation in cylindrical coordinates is established and solved based on Bessel functions and boundaries conditions;this led us to the photovoltage and photocurrent density in the cell. The open circuit voltage and the short circuit current density are then deduced and analyzed considering the base radius. Based on J-V and P-V curves, series and shunt resistances, fill factor and maximum power point are derived and the conversion efficiency of the cell is deduced. We showed that short circuit current density, maximum power, conversion efficiency and shunt resistance decrease with increasing base radius contrary to the open circuit voltage, the fill factor and the series resistance.

Normalized Area Solar Cell and Potential Applications

Nowadays in laboratories and in industries, distribution of solar cells sizes could be very large, hence;for the first time it is rather difficult to compare photovoltaic parameters which are size dependent (current, serial resistance, shunt resistance...) and performances of these cells. Also, it will be useful for scale effect to extrapolate performances calculated on a unit size solar cell to commercial products, especially in the case of heterogeneous wafers used for the device.

A Simplified Simulation Procedure and Analysis of a Photovoltaic Solar System Using a Single Diode Model

A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (n) and the diode saturation current (Io). For a quick and fast convergence, we have determined the optimal ideality factor (no) and optimal saturation current (Ioopt) as the primary parameters by first assuming the optimal values of Rsh, Rs and Iph at standard test conditions (STC). Further, we evaluated the effects of Iph, Rs and Rsh on I-V and P-V curves by considering the values of n below no. We have evaluated different iterative procedures of determining Rsh and Rs at open-circuit, short-circuit point and the maximum-power points. These procedures have been classified into four approaches that guarantees positive shunt and series resistance for n ≤ no. These approaches have been categorized by deriving the saturation current as a dependent variable at each cardinal point with or without Rs and Rsh pair. The values obtained for the five parameters have been used to simulate the photovoltaic solar module characteristic curves with great precision at different air temperatures and irradiances, considering the effect of Nominal Operating Cell Temperature (NOCT).

Optimization of Electrics Parameters CdS/CdTe Thin Film Solar Cell Using Dielectric Model

Abstract *Corresponding author. In this paper, the electrical properties of heterojunction solar cells thin film n-CdS/p-CdTe from dielectric model have been studied. Based on the expression of the minority, carriers density in the p-CdTe base of solar cell, the photocurrent density and that of the photo voltage are determined according to the cell dimensions, doping levels, the absorption coefficient, the solar irradiance and the temperature, etc. Fitting using Mathcad and Origin Lab software on the photocurrent and the photovoltage of the n-CdS/p-CdTe enabled to determine the series, shunt resistance and the maximum power point. The results obtained, in good agreement with experimental results, allow operating simulations for optimizing maximum outputs parameters (Ip, Vp). Thereafter, it is proposed a type of photovoltaic generator module with a good command of the design parameters for better efficiency.