Using the measured capacitance–voltage and current–voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors（HFETs） with the side-Ohmic contacts, it was found that the polarizatio...Using the measured capacitance–voltage and current–voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors（HFETs） with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the AlN/GaN HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in AlN/GaN HFETs than in Al GaN/AlN/GaN and In0：17Al0：83N/AlN/GaN HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the AlN/GaN heterostructure.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11174182,61306113)the Specialized Research Fund for the Doctoral Program of Higher Education(No.20110131110005)
文摘Using the measured capacitance–voltage and current–voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors（HFETs） with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the AlN/GaN HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in AlN/GaN HFETs than in Al GaN/AlN/GaN and In0：17Al0：83N/AlN/GaN HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the AlN/GaN heterostructure.
