A search-free near-field source localization method with exact signal model

Most of the near-field source localization methods are developed with the approximated signal model,because the phases of the received near-field signal are highly non-linear.Nevertheless,the approximated signal model based methods suffer from model mismatch and performance degradation while the exact signal model based estimation methods usually involve parameter searching or multiple decomposition procedures.In this paper,a search-free near-field source localization method is proposed with the exact signal model.Firstly,the approximative estimates of the direction of arrival(DOA)and range are obtained by using the approximated signal model based method through parameter separation and polynomial rooting operations.Then,the approximative estimates are corrected with the exact signal model according to the exact expressions of phase difference in near-field observations.The proposed method avoids spectral searching and parameter pairing and has enhanced estimation performance.Numerical simulations are provided to demonstrate the effectiveness of the proposed method.

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

A Direct Parameter-Extraction Method for GaInP/GaAs Heterojunction Bipolar Transistors Small-Signal Model

An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is proposed for extraction of accessresistance and parasiticinductance. This method differs from previous ones by extracting the c-quivalent circuit parameterswithout using special test structure or global numerical optimization techniques. The mainadvantage of this method is that a unique and physically meaningful set of intrinsic parameters isextracted from impedance and admittance representation of the measured S-pa-rameters in thefrequency range of 1-12 GHz under different bias conditions. The method yields a deviation of lessthan 5% between measured and modeled S-parameters.

Ground moving target signal model and power calculation in forward scattering micro radar

Forward scattering micro radar is used for situation awareness; its operational range is relatively short because of the battery power and local horizon, the free space propagation model is not appropriate. The ground moving targets, such as humans, cars and tanks, have only comparable size with the transmitted signal wavelength; the point target model and the linear change of observation angle are not applicable. In this paper, the signal model of ground moving target is developed based on the case of forward scattering micro radar, considering the two-ray propagation model and area target model, and nonlinear change of observation angle as well as high order phase error. Furthermore, the analytical form of the received power from moving target has been obtained. Using the simulated forward scattering radar cross section, the received power of theoretical calculation is near to that of measured data. In addition, the simulated signal model of ground moving target is perfectly matched with the experimented data. All these results show the correctness of analytical calculation completely.

Performance prediction of switched reluctance generator with time average and small signal models

This paper presents the complete mathematical model and predicts the performance of switched reluctance generator with time average and small signal models. The complete mathematical model is developed in three stages. First, a switching model is developed based on quasi-linear inductance profile. Next, based on the switching behaviour, a time average model is obtained to measure the difference between the excitation and generation time in each switching cycle. Finally, to track control voltage and current wave shapes, a small signal model is designed. The effectiveness of the complete multilevel model combining electrical machine, power converter, load and control with programming language is demonstrated through simulations. A PI controller is used for controlling the voltage of the generator. The results presented show that the controller exhibits accurate tracking control of load voltage under different operating conditions. This demonstrates that the proposed model is able to perform an accurate control of the generated output voltage even in transient situations. The simulation is performed to choose the control parameters and study the performance of switched reluctance generator prior to its actual implementation. Initial experimental results are presented using NI-Data acquisition card to control the output power according to load requirements.

A symbolically defined InP double heterojunction bipolar transistor large-signal model

A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device （SDD） in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.

Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

90-nm T-shaped gate InP-based In_（0.52）Al_（0.48）As/In_（0.6）Ga_（0.4）As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μm.DC,RF and small-signal model characterizations were demonstrated.The maximum saturation current density was measured to be 755 mA/mm biased at V_（gs）=0.6 V and V_（ds）=1.5 V.The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_（ds）=—0.1V and V_（ds）=1.5 V.The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,respectively.The inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 GHz.The smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.

A new small-signal model for asymmetrical AlGaN/GaN HEMTs

A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors（HEMTs） is proposed for accurate prediction of HEMT behavior up to 20 GHz.The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted.All the parameters needed in this process are determined by the device structure rather than optimization methods.This guarantees consistency between the parameter values and the component＇s physical meaning.

ANALYSIS OF THE RETURNED SIGNAL MODEL IN BISTATIC RADAR SYSTEMS

Taking the relativistic effect of high velocity moving target into account, the Doppler shift, polarization deflection, reflection coefficient and phase delay of reflected electric field are analyzed rigorously under the assumptions that incident signal to the target is a plane wave and the target is a perfect conductor plane; and their analytic expressions are obtained. The present results are of practical significance to some extent for the accurate expression of the wideband returned signal of a high velocity moving target in the bistatic radar system and for the understanding of wideband ambiguity functions.

A Verilog-A large signal model for InP DHBT including thermal effects

A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.

Large-signal modeling method for power FETs and diodes

Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices.The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

An improved temperature-dependent large signal model of microwave GaN HEMTs

Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability de- sign and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of-55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.

Notes on M-Estimation in Exponential Signal Models

An M-estimation of the parameters in an undamped exponential signal model was proposed in Wu and Tam(IEEE Trans Signal Process 49(2):373–380,2001),and the estimation was shown to be consistent under mild assumptions.In this paper,the limiting distributions of the M-estimators are investigated.It is shown that they are asymptotically normally distributed under similar conditions as assumed in Wu and Tam(IEEE Trans Signal Process 49(2):373–380,2001).In addition,a recursive algorithm for computing the M-estimators of frequencies is proposed,and the strong consistency of these estimators is established.Monte Carlo simulation studies using Huber’sρfunction are also provided.

A millimeter wave large-signal model of GaAs planar Schottky varactor diodes

A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.

RF CMOS modeling:a novel empirical large-signal model for an RF-MOSFET

A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.

Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in largesignal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract Rg. In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and fT and fmax can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz.

MEXTRAM model based SiGe HBT large-signal modeling

An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model （level 504.5） is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1 × 8 μm^2 emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters （from 50 MHz to 20 GHz）, which shows that the proposed model is accurate and reliable. The model has been implemented in Verilog-A using the ADS circuit simulator.

Array processing for the GD signal model with angular spread

Array processing is to process the signals carried by the propagating waves received at an array of sensors. When the signals propagate through the practical random time-variant medium, their wavefronts can show the progressive losses of coherence with increasing spatial separation. These decorrelations of wavefronts result in an angular spread in the wavenumber spectrum centered about the true signal dircction-of-arrival. This paper puts the emphasis upon the array processing of the angular-spread signal which is called the Generalized Directional (GD) signal and aims to match array processing to this signal model in the energy sense. In this paper, we also present a method of the computer simulation of the generalized directional signal model. Some results of computer simulation experiments and lake-tests in Xinanjiang River are given.

An improved large signal model of InP HEMTs

An improved large signal model for InP HEMTs is proposed in this paper.The channel current and charge model equations are constructed based on the Angelov model equations.Both the equations for channel current and gate charge models were all continuous and high order drivable,and the proposed gate charge model satisfied the charge conservation.For the strong leakage induced barrier reduction effect of InP HEMTs,the Angelov current model equations are improved.The channel current model could fit DC performance of devices.A 2×25μm×70 nm InP HEMT device is used to demonstrate the extraction and validation of the model,in which the model has predicted the DC I–V,C–V and bias related S parameters accurately.