Fabrication and properties of silicene and silicene–graphene layered structures on Ir(111)

Silicene, a two-dimensional(2D) honeycomb structure similar to graphene, has been successfully fabricated on various substrates. This work will mainly review the syntheses and the corresponding prope√rties o√f silicene and√ silice√ne–graphene layered structures on Ir(111) substrates. For silicene on Ir(111), the buckled(3 ×3) silicene/(7 ×7)Ir(111) configuration and its electronic structure are fully discussed. For silicene–graphene layered structures, silicene layer can be constructed underneath graphene layer by an intercalation method. These results indicate the possibility of integrating silicene with graphene and may link up with potential applications in nanoelectronics and related areas.

Bimodal growth of Fe islands on graphene

Magnetic metals deposited on graphene hold the key to applications in spintronics. Here, we present the results of Fe islands grown on graphene/Si C(0001) by molecular beam epitaxy, which are investigated by scanning tunneling microscopy. The two types of islands distinguished by flat or round tops are revealed, indicating bimodal growth of Fe. The atomic structures on the top surfaces of flat islands are also clearly resolved. Our results may improve the understanding of the mechanisms of metals deposited on graphene and pave the way for future spintronic applications of Fe/graphene systems.

Molecular Beam Epitaxy Growth and Scanning Tunneling Microscopy Study of Pyrite CuSe2 Films on SrTiO3

We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide （CuSe2 ） films on SrTiO3 （001）. Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov （layer-plus-island） mode with a preferential orientation of （111）. Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.

Er intercalation and its impact on transport properties of epitaxial graphene

Intercalation of atomic species is a practicable method for epitaxial graphene to adjust the electronic band structure and to tune the coupling between graphene and Si C substrate. In this work, atomically flat epitaxial graphene is prepared on 4H-SiC(0001) using the flash heating method in an ultrahigh vacuum system. Scanning tunneling microscopy, Raman spectroscopy and electrical transport measurements are utilized to investigate surface morphological structures and transport properties of pristine and Er-intercalated epitaxial graphene. It is found that Er atoms are intercalated underneath the graphene layer after annealing at 900℃, and the intercalation sites of Er atoms are located mainly at the bufferlayer/monolayer-graphene interface in monolayer domains. We also report the different behaviors of Er intercalation in monolayer and bilayer regions, and the experimental results show that the diffusion barrier for Er intercalated atoms in the buffer-layer/monolayer interface is at least 0.2 eV higher than that in the first/second graphene-layer interface. The appearance of Er atoms is found to have distinct impacts on the electronic transports of epitaxial graphene on SiC(0001).

Construction of twisted graphene–silicene heterostructures

Van der Waals stacking of two-dimensional crystals with rotation or mismatch in lattice constants gives rise to rich physical phenomena that are closely related to the strong correlations and band topology.Twisted graphene and silicene heterobilayers have been theoretically predicted to host a tunable transport gap due to the mismatch of Dirac cones in the graphene and silicene layers.However,experimental realization of such twisted structure is challenging.Here,we report the formation of twisted graphene/silicene bilayers on Ru(0001)crystal via intercalation.Different moirépatterns form as single-crystalline graphene grows over different grains of the Ru surface.After silicon intercalation,graphene/silicene bilayers are observed with different twisting angles on top of different grains of the Ru substrate.Our work provides a new pathway towards construction of graphene based twisted heterobilayers.

Scanning Tunneling Microscope Observations of Non-AB Stacking of Graphene on Ni Films

Microscopic features of graphene segregated on Ni films prior to chemical transfer--including atomic structures of monolayers and bilayers, Moire patterns due to non-AB stacking, as well as wrinkles and ripples caused by strain effects-have been characterized in detail by high-resolution scanning tunneling microscopy （STM）. We found that the stacking geometry of the bilayer graphene usually deviates from the traditional Bernal stacking （or so-called AB stacking）, resulting in the formation of a variety of Moir6 patterns. The relative rotations inside the bilayer were then qualitatively deduced from the relationship between Moir6 patterns and carbon lattices. Moreover, we found that typical defects such as wrinkles and ripples tend to evolve around multi-step boundaries of Ni, thus reflecting strong perturbations from substrate corrugations. These investigations of the morphology and the mechanism of formation of wrinkles and ripples are fundamental topics in graphene research. This work is expected to contribute to the exploration of electronic and transport properties of wrinkles and ripples.

The potentially crucial role of quasi-particle interferences for the growth of silicene on graphite

A comprehensive picture of the initial stages of silicene growth on graphite is drawn.Evidence is shown that quasiparticle interferences play a crucial role in the formation of the observed silicene configurations.We propose,on one hand,that the charge modulations caused by those quantum interferences serve as templates and guide the incoming Si atoms to self-assemble to the unique(√3 x√3)R30°honeycomb atomic arrangement.On the other hand,their limited extension limits the growth to about 150 Si atoms under our present deposition conditions.The here proposed electrostatic interaction finally explains the unexpected stability of the observed silicene islands over time and with temperature.Despite the robust guiding nature of those quantum interferences during the early growth phase,we demonstrate that the window of experimental conditions for silicene growth is quite narrow,making it an extremely challenging experimental task.Finally,it is shown that the experimentally observed threedimensional silicon clusters might very well be the simple result of the end of the silicene growth resulting from the limited extent of the quasi-particle interferences.

Epitaxial Ge Growth on Si(111) Covered with Ultrathin SiO₂Films

The epitaxial growth of Ge on Si(111) covered with the 0.3 nm thick SiO2 film is studied by scanning tunneling microscopy. Nanoareas of bare Si in the SiO2 film are prepared by Ge deposition at a temperature in the range of 570℃-650℃ due to the formation of volatile SiO and GeO molecules. The surface morphology of Ge layers grown further at 360℃-500℃ is composed of facets and large flat areas with the Ge(111)-c(2 × 8) reconstruction which is typical of unstrained Ge. Orientations of the facets, which depend on the growth temperature, are identified. The growth at 250℃-300℃ produces continuous epitaxial Ge layers on Si(111). A comparison of the surface morphology of Ge layers grown on bare and SiO2-film covered Si(111) surfaces shows a significantly lower Ge-Si intermixing in the latter case due to a reduction in the lattice strain. The found approach to reduce the strain suggests the opportunity of the thin continuous epitaxial Ge layer formation on Si(111).

Morphological features and nanostructures generated during SiC graphitization process

Surface morphological features and nanostructures generated during SiC graphitization process can significantly affect fabrication of high-quality epitaxial graphene on semiconductor substrates.In this work,we investigate the surface morphologies and atomic structures during graphitization process of 4H-SiC(0001) using scanning tunneling microscopy.Our high-magnified scanning-tunneling-microscope images exhibit the appearance and gradual developments of SiC(1 × 1)nanostructures after 1100℃ cleaning treatments,irregularly distributed among carbon nanocaps and(√3×√3) reconstruction domains.A model for the formation and growth progression of SiC(1 × 1) nanostructures has been proposed.When post-annealing temperature reaches 1300 ℃,the nanoholes and nanoislands can be observed on the surface,and multilayer graphene is often detected lying on the top surface of those nanoislands.These results provide profound insights into the complex evolution process of surface morphology during SiC thermal decomposition and will shed light on fabrication of SiC nanostructures and graphene nanoflakes.

Phase transition-induced superstructures ofβ-Sn films with atomic-scale thickness

The ultrathinβ-Sn(001)films have attracted tremendous attention owing to its topological superconductivity(TSC),which hosts Majorana bound state(MBSs)for quantum computation.Recently,β-Sn(001)thin films have been successfully fabricated via phase transition engineering.However,the understanding of structural phase transition ofβ-Sn(001)thin films is still elusive.Here,we report the direct growth of ultrathinβ-Sn(001)films epitaxially on the highly oriented pyrolytic graphite(HOPG)substrate and the characterization of intricate structural-transition-induced superstructures.The morphology was obtained by using atomic force microscopy(AFM)and low-temperature scanning tunneling microscopy(STM),indicating a structure-related bilayer-by-bilayer growth mode.The ultrathinβ-Sn film was made of multiple domains with various superstructures.Both high-symmetric and distorted superstructures were observed in the atomic-resolution STM images of these domains.The formation mechanism of these superstructures was further discussed based on the structural phase transition ofβtoα-Sn at the atomic-scale thickness.Our work not only brings a deep understanding of the structural phase transition of Sn film at the two-dimensional limit,but also paves a way to investigate their structure-sensitive topological properties.

Epitaxial fabrication of AgTe monolayer on Ag(111)and the sequential growth of Te film

Transition-metal chalcogenides(TMCs)materials have attracted increasing interest both for fundamental research and industrial applications.Among all these materials,two-dimensional(2D)compounds with honeycomb-like structure possess exotic electronic structures.Here,we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111)and annealing.Few intrinsic defects are observed and studied by scanning tunneling microscopy,indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary.Then,the monolayer AgTe can serve as the template for the following growth of Te film.Meanwhile,some Te atoms are observed in the form of chains on the top of the bottom Te film.Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.

碳化硅衬底上外延双层石墨烯的电输运性质

石墨烯是低维材料领域研究的热点,在这一体系中研究发现了诸多新奇的量子现象,深入理解石墨烯的电输运性质对于其在未来电子学器件中的应用具有重要的意义.本文通过热分解的方法在SiC单晶衬底上获得外延的双层石墨烯,并系统研究了其电输运性质.在小磁场范围内观测到弱局域化效应,并在较大的磁场区间发现了不饱和线性磁阻.通过角度依赖的磁阻测量,发现该线性磁阻现象符合二维体系的磁输运特征.还在平行场下观测到了负磁阻效应,可能是由双层石墨烯的转角莫尔条纹导致的局部晶格起伏导致的.本文工作加深了对于外延生长的层间具有一定转角的双层石墨烯的电输运性质的认识.

Epitaxially grown monolayer VSe2： an air-stable magnetic two-dimensional material with low work function at edges

Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer twodimensional(2 D) materials, which makes fabrication of new magnetic 2 D materials a fascinating issue.Here, we report the growth of monolayer VSe_2 by molecular beam epitaxy(MBE) method. Electronic properties measurements by scanning tunneling spectroscopy(STS) method revealed that the asgrown monolayer VSe_2 has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe_2. This high-quality monolayer VSe_2, a very air-inert 2 D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.

一种新型二维材料:硼烯

硼烯是硼元素的二维同素异形体,其结构和物理特性一直受到研究者的强烈关注。但由于现实中缺乏天然存在的硼烯,该领域的研究只能停留在理论上的描述。最近,作者所在研究组成功地制备出了单层硼烯薄膜,实现了学术界期待已久的突破,并对其原子结构和电子性质进行了深入的研究,为未来研制基于硼烯的电子器件提供了潜在可能。文章将从硼烯的理论研究开始讲起,着重介绍该新型二维材料的结构模型、实验制备过程及其电子结构表征等研究。

有机半导体外延生长的扫描隧道显微镜研究

有机半导体薄膜的光、电等性质取决于有机分子的取向以及长程有序性.研究有机半导体的生长机理以及内在驱动力是一个重要环节.文章通过两个典型生长体系,perylene在Ru(0001)表面上的生长和tetracene在Ag(110)表面上生长过程的介绍,给出了形成有机半导体晶化薄膜的可能性以及决定其有序生长的内在驱动力.对于perylene在Ru(0001)表面上的生长,决定其过程的主要驱动力是分子间的相互排斥作用,在单分子层时,由于这种相互作用导致形成Ru(0001)-12×12-8 perylene有序超结构.而对于tetracene/Ag(110)体系,决定生长的驱动力主要表现为相互吸引作用,因此,在小于单分子层时,tetracene呈有序的岛状生长;而当tetracene膜的厚度大于单分子层时,呈逐层生长模式,并形成具有正交晶系结构的晶化薄膜.

硅烯表面的氢吸附

硅烯是类似于石墨烯的单原子层硅薄膜.作为硅的一种新型同素异形体,其拥有奇特的狄拉克电子态,可带来新奇的物理性质,近年来引起人们的广泛关注.由于硅烯中硅原子的化学键未饱和,可以用来吸附外来原子,从而实现对硅烯的化学修饰以及电子态的调控.本文主要介绍了不同原子在硅烯上吸附的一些理论进展,以及最近在实验上对Ag(111)上的单层硅烯进行氢化的重要研究结果.