A Method for Preparation of Ordered Porous Silicon Based on a 2D SiO_2 Template

A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.

A New Method for the Ultra-smooth Machining of the Silicon Based Materials

A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.

Preparation and electrochemical lithium storage performance of porous silicon microsphere composite with metal modification and carbon coating

This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃spheres as a precursor.pSi/Sb⁃Sn@C had a 3D structure with bimetallic(Sb⁃Sn)modified porous silicon micro⁃spheres(pSi/Sb⁃Sn)as the core and carbon coating as the shell.Carbon shells can improve the electronic conductivi⁃ty and mechanical stability of porous silicon microspheres,which is beneficial for obtaining a stable solid electrolyte interface(SEI)film.The 3D porous core promotes the diffusion of lithium ions,increases the intercalation/delithia⁃tion active sites,and buffers the volume expansion during the intercalation process.The introduction of active met⁃als(Sb⁃Sn)can improve the conductivity of the composite and contribute to a certain amount of lithium storage ca⁃pacity.Due to its unique composition and microstructure,pSi/Sb⁃Sn@C showed a reversible capacity of 1247.4 mAh·g^(-1) after 300 charge/discharge cycles at a current density of 1.0 A·g^(-1),demonstrating excellent rate lithium storage performance and enhanced electrochemical cycling stability.

A Single Mode Hybrid Ⅲ-Ⅴ/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection

A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

Simulation of a Silicon LED in Standard CMOS Technology

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.

High Temperature Oxidation Behavior of Nitride Bonded SiC Based Refractories

High temperature oxidation behavior of two kinds of nitride bonded SiC based refractories wtls bwestigated at I 100-1 .500℃ by means of X-ray di[fractometer, scanning electronic microscopy and thermogravimetry. The results show that ： （1） with the temperature im＇reasing, the oxidation mass increment rote of the specimen increases.first and then. decreases, and oxidation passi＇va tion occttrs; （2） the oxidation resistance of SiAION bonded SiC refractories is superior to that of Si3N4 botlded SiC refractories ; （3） high temperature oxidtttion resuits itt the increase of compressive strength at room temperature of SiC based refractoviesiaes comlmred with specimen before oxidatiotl; the compressive strength of SIMON bonded SiC specimens oxidized at high temperatures decreases with the increase of the temperature as a result of formation amt burst of surfhce bubble, while the decrease of compressive strength of Sign4 bonded SiC specimens oxidized at high temperatures is owitng to the bwrease of the consistency of netlike crack assoeiated with cristobalite transfornuttion during cooling.

Effect of Si_3N_4 on Resistance of Magnesia Based Castable

The magnesia based curable specimens with different Si3N4 contents were casted using sintered magnesite （w（MgO）=95%） as starting material, SiO2 micro-powder as binder, 0.3%, 4% and 5% β-Si3N4 powder replacing the equal addition of magnesia powder respectively. The slag resistance test was carried out at 1550℃ for 3h using Baosteel tundish slag and static crucible method. The result indicates that： introducing Si3N4 could obviously improve the slag resistance of MgO based castable, which increased with increasing Si3N4. Dense SiO2 sintered layer formed on the surface of magnesia based castable because of the oxidation of Si3N4 addition, which can prevent the further slag penetration. In the deep inner of castable, the partial-pressure of oxygen was very low, so Si3N4 can exist stably. Meanwhile in reducing atmosphere, Si3N4 was hard to be sintered, which resulted in the loose interior structure of MgO based castable.

Photoluminescence Properties of Er-doped SiC Thin Film

Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.

Compact, submilliwatt, 2 × 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities

We propose and experimentally demonstrate a 2×2 thermo-optic(TO) crossbar switch implemented by dual photonic crystal nanobeam(PCN)cavities within a silicon-on-insulator(SOI)platform.By thermally tuning the refractive index of silicon,the resonance wavelength of the PCN cavities can be red-shifted.With the help of the ultrasmall mode volumes of the PCN cavities,only～0.16 mW power is needed to change the switching state.With a spectral passband of 0.09 nm at the 1583.75 nm operation wavelength,the insertion loss(IL)and crosstalk(CT)performances were measured as IL(bar)=-0.2 dB,CT(bar)=-15 dB,IL(cross)=-1.5 dB,and CT(cross)=-15 dB.Furthermore,the thermal tuning efficiency of the fabricated device is as high as1.23 nm/mW.

Broadband on-chip integrator based on silicon photonic phase-shifted Bragg grating

All-optical integrators are key devices for the realization of ultra-fast passive photonic networks, and, despite their broad applicability range(e.g., photonic bit counting, optical memory units, analogue computing, etc.), their realization in an integrated form is still a challenge. In this work, an all-optical integrator based on a silicon photonic phase-shifted Bragg grating is proposed and experimentally demonstrated, which shows a wide operation bandwidth of 750 GHz and integration time window of 9 ps. The integral operation for single pulse, inphase pulses, and π-shifted pulses with different delays has been successfully achieved.

Compact on-chip 1×2 wavelength selective switch based on silicon microring resonator with nested pairs of subrings

We propose and experimentally demonstrate compact on-chip 1×2 wavelength selective switches(WSSs) based on silicon microring resonators(MRRs) with nested pairs of subrings(NPSs). Owing to the resonance splitting induced by the inner NPSs, the proposed devices are capable of performing selective channel routing at certain resonance wavelengths of the outer MRRs. System demonstration of dynamic channel routing using fabricated devices with one and two NPSs is carried out for 10 Gb∕s non-return-to-zero signal. The experimental results verify the effectiveness of the fabricated devices as compact on-chip WSSs.

Numerical investigations of an optical switch based on a silicon stripe waveguide embedded with vanadium dioxide layers

A novel scheme for the design of an ultra-compact and high-performance optical switch is proposed and investigated numerically. Based on a standard silicon(Si) photonic stripe waveguide, a section of hyperbolic metamaterials(HMM) consisting of 20-pair alternating vanadium dioxide (VO_2)∕Si thin layers is inserted to realize the switching of fundamental TE mode propagation. Finite-element-method simulation results show that, with the help of an HMM with a size of 400 nm × 220 nm × 200 nm(width × height × length), the ON/OFF switching for fundamental TE mode propagation in an Si waveguide can be characterized by modulation depth(MD) of5.6 d B and insertion loss(IL) of 1.25 dB. It also allows for a relatively wide operating bandwidth of 215 nm maintaining MD > 5 dB and IL < 1.25 dB. Furthermore, we discuss that the tungsten-doped VO_2 layers could be useful for reducing metal-insulator-transition temperature and thus improving switching performance. In general, our findings may provide some useful ideas for optical switch design and application in an on-chip all-optical communication system with a demanding integration level.

Electrical nonlinearity in silicon modulators based on reversed PN junctions

The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators.This effect,however,was inadvertently neglected in previous studies.Considering the electrical nonlinearity in simulation,a 32.2 dB degradation in the CDR3(i.e.,the suppression ratio between the fundamental signal and intermodulation distortion)of the modulator was observed at a modulation speed of 12 GHz,and the spurious free dynamic range was simultaneously degraded by 17.4 dB.It was also found that the linearity of the silicon modulator could be improved by reducing the series resistance of the PN junction.The frequency dependence of the linearity due to the electrical nonlinearity was also investigated.

Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides

Two types of 1×2 multi-mode interference （MMI） splitters with splitting ratios of 85：15 and 72：28 are designed. On the basis of a numerical simulation, an optimal length of the MMI section is obtained. Subsequently, the devices are fabricated and tested. The footprints of the rectangular MMI regions are only 3×18.2 and 3×14.3 （#m）. The minimum excess losses are 1.4 and 1.1 dB. The results of the test on the splitting ratios are consistent with designed values. The devices can be applied in ultra-compact photonic integrated circuits to realize the ＂tap＂ function.

Honeycomb‐like hierarchical porous silicon composites with dual protection for ultrastable Li‐ion battery anodes

Silicon offers a high theoretical specific capacity for anodic lithium storage.However,its applications are hindered by the electrode instability caused by the sharp volume change,and the limited rate performance resulted from the insulating property.Herein,we introduce a facile and fast method of preparing honeycomb‐like silicon‐based anodes(MXene‐Si@C)with porous structure using MXene and carbon‐coated silicon.The dual protection from both the surface coating and as‐formed interlayered vacant spaces ameliorate the volume expansion of the silicon and thus reinforce the mechanical stability of the electrode.In addition,the highly conducting MXene and the surface carbon coating form a hierarchical and consecutive electron‐conducting network with evidently reduced resistance.With this proposed composite,a high average Coulombic efficiency of 99.73%and high capacity retention of 82.4%after 300 cycles at 1 A/g can be achieved even with an areal loading around 1.5 mg/cm^(2).Coupled with an NCM523 cathode,the proof‐of‐concept full cell delivers a high capacity of 164.2mAh/g with an extremely high energy density of 574Wh/kg(based on the mass of the electrode materials)at 0.2 C and an excellent cyclability at 0.5 C of 100 cycles with decent capacity retention(80.28%).