A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density rea...A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.展开更多
Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-Si...Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.展开更多
文摘A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.
文摘Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.
