Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconduc...Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems.展开更多
Electrically pumped high power terahertz （THz） emitters that operated above room temperature in a pulse mode were fabricated from nitrogen-doped n-type 6H-SiC. The emission spectra had peaks centered on 5 THz and 12...Electrically pumped high power terahertz （THz） emitters that operated above room temperature in a pulse mode were fabricated from nitrogen-doped n-type 6H-SiC. The emission spectra had peaks centered on 5 THz and 12 THz （20 meV and 50 meV） that were attributed to radiative transitions of excitons bound to nitrogen donor impurities. Due to the relatively deep binding energies of the nitrogen donors, above 100 meV, and the high thermal conductivity of the SiC substrates, the THz output power and operating temperature were significantly higher than previous dopant based emitters. With peak applied currents of a few amperes, and a top surface area of 1 mm2, the device emitted up to 0.5 mW at liquid nitrogen temperature （77 K）, and tens of microwatts up to 333 K. This result is the highest temperature of THz emission reported from impurity-based emitters.展开更多
To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the vario...To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the various materials inves-tigated for the fabrication of synaptic devices,silicon carbide(SiC)has emerged as a preferred choices due to its high electron mobility,superior thermal conductivity,and excellent thermal stability,which exhibits promising potential for neuromorphic applications in harsh environments.In this review,the recent progress in SiC-based synaptic devices is summarized.Firstly,an in-depth discussion is conducted regarding the categories,working mechanisms,and structural designs of these devices.Subse-quently,several application scenarios for SiC-based synaptic devices are presented.Finally,a few perspectives and directions for their future development are outlined.展开更多
文摘Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems.
基金supported by the NSF Award No.DMR-0601920ONR Contract No.N0001-4-00-1-0834
文摘Electrically pumped high power terahertz （THz） emitters that operated above room temperature in a pulse mode were fabricated from nitrogen-doped n-type 6H-SiC. The emission spectra had peaks centered on 5 THz and 12 THz （20 meV and 50 meV） that were attributed to radiative transitions of excitons bound to nitrogen donor impurities. Due to the relatively deep binding energies of the nitrogen donors, above 100 meV, and the high thermal conductivity of the SiC substrates, the THz output power and operating temperature were significantly higher than previous dopant based emitters. With peak applied currents of a few amperes, and a top surface area of 1 mm2, the device emitted up to 0.5 mW at liquid nitrogen temperature （77 K）, and tens of microwatts up to 333 K. This result is the highest temperature of THz emission reported from impurity-based emitters.
基金supported by the Natural Science Foundation of Zhejiang Province(Grant No.LQ24F040007)the National Natural Science Foundation of China(Grant No.U22A2075)the Opening Project of State Key Laboratory of Polymer Materials Engineering(Sichuan University)(Grant No.sklpme2024-1-21).
文摘To address the increasing demand for massive data storage and processing,brain-inspired neuromorphic comput-ing systems based on artificial synaptic devices have been actively developed in recent years.Among the various materials inves-tigated for the fabrication of synaptic devices,silicon carbide(SiC)has emerged as a preferred choices due to its high electron mobility,superior thermal conductivity,and excellent thermal stability,which exhibits promising potential for neuromorphic applications in harsh environments.In this review,the recent progress in SiC-based synaptic devices is summarized.Firstly,an in-depth discussion is conducted regarding the categories,working mechanisms,and structural designs of these devices.Subse-quently,several application scenarios for SiC-based synaptic devices are presented.Finally,a few perspectives and directions for their future development are outlined.
