The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the devic...The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.展开更多
A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation...A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.展开更多
We propose and experimentally demonstrate an integrated silicon photonic scheme to generate multi-channel millimeter-wave(MMW) signals for 5 G multi-user applications. The fabricated silicon photonic chip has a footpr...We propose and experimentally demonstrate an integrated silicon photonic scheme to generate multi-channel millimeter-wave(MMW) signals for 5 G multi-user applications. The fabricated silicon photonic chip has a footprint of 1.1 × 2.1 mm^2 and integrates 7 independent channels each having on-chip polarization control and heterodyne mixing functions. 7 channels of4-Gb/s QPSK baseband signals are delivered via a 2-km multi-core fiber(MCF) and coupled into the chip with a local oscillator(LO) light. The polarization state of each signal light is automatically adjusted and aligned with that of the LO light, and then 7 channels of 28-GHz MMW carrying 4-Gb/s QPSK signals are generated by optical heterodyne beating. Automated polarizationcontrol function of each channel is also demonstrated with ～7-ms tuning time and ～27-dB extinction ratio.展开更多
A novel temperature fluctuation synthesis/simultaneous densification process was developed for the preparation of Ti3SiC2 bulk ceramics. In this process. Si is used as an in-situ liquid forming phase and it is favorab...A novel temperature fluctuation synthesis/simultaneous densification process was developed for the preparation of Ti3SiC2 bulk ceramics. In this process. Si is used as an in-situ liquid forming phase and it is favorable for both the solid-liquid synthesis and the densification of Ti3SiC2 rainies. The present work demonstrated that the temperature fluctuation synthesis/simultaneous densification process is one of the most effective and simple methods for the preparation of Ti3SiC2 bulk materials providing relatively low synthesis temperature. short reaction time; and simultaneous synthesis and densification. This work also showed the capability to control the microstructure, e.g., the preferred orientation, of the bulk Ti3SiC2 materials simply by applying the hot pressing pressure at different Stages of the temperature fluctuation process. And textured Ti3SiC2 bulk materials with {002} faces of laminated Ti3SiC2 grains normal to the hot pressing axis were prepared.展开更多
In this paper,a new type of optically controllable silicon slab loaded E-plane millimeterwave rectangular waveguide switch is presented.It uses SELFOC lens to couple optical puls-es to silicon slab with optical fiber....In this paper,a new type of optically controllable silicon slab loaded E-plane millimeterwave rectangular waveguide switch is presented.It uses SELFOC lens to couple optical puls-es to silicon slab with optical fiber.The on/off ratio reaches 42dB,the front fringe of suchkind swith is less than 0.05μs,and the insertion loss is less than 1dB in the full band of 26.5GHz to 40GHz.展开更多
Transverse thickness difference is an important quality index of non-oriented silicon steel strips. In order to fulfill users＇ accuracy requirements on the transverse thickness of silicon steel and improve the produc...Transverse thickness difference is an important quality index of non-oriented silicon steel strips. In order to fulfill users＇ accuracy requirements on the transverse thickness of silicon steel and improve the production yield, the factors influencing transverse thickness difference were analyzed. Then the work roll shape, control strategy and incoming hot-rolled strips were optimized. Since the optimization measures were implemented in the actual production, the thickness difference of non-oriented silicon steel has been reduced greatly and fulfilled the requirements placed by users. These measures have achieved remarkable effects.展开更多
针对2.5D封装用硅通孔(through silicon via,TSV)硅转接基板批量化生产过程中缺乏可靠性评价与优化技术的问题,提出基于统计过程控制(statistical process control,SPC)的评估控制系统,实现在线工艺状态监控及评价,设计硅转接板测试用...针对2.5D封装用硅通孔(through silicon via,TSV)硅转接基板批量化生产过程中缺乏可靠性评价与优化技术的问题,提出基于统计过程控制(statistical process control,SPC)的评估控制系统,实现在线工艺状态监控及评价,设计硅转接板测试用工艺控制检测(process control monitor,PCM)结构,阐述自动光学检测(automated optical inspection,AOI)中常见的缺陷对系统可靠性的影响。提出的SPC系统对硅转接板批量化生产良率提升具有重要意义。展开更多
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4162030)the National Science and Technology Major Project of China(Grant No.2013ZX02303002)
文摘The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
基金Project partially supported by the Zhejiang Provincial Nature Science Fund of China (Nos. Y107055 and Y1080546)the Semiconductor Manufacturing International Corp. (SMIC)
文摘A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.
基金supported by the National Key R&D Pro-gram of China under Grant 2016YFB0402501in part by the Natural Science Foundation of China under grant 61605112Open Fund of IPOC under grant BUPT
文摘We propose and experimentally demonstrate an integrated silicon photonic scheme to generate multi-channel millimeter-wave(MMW) signals for 5 G multi-user applications. The fabricated silicon photonic chip has a footprint of 1.1 × 2.1 mm^2 and integrates 7 independent channels each having on-chip polarization control and heterodyne mixing functions. 7 channels of4-Gb/s QPSK baseband signals are delivered via a 2-km multi-core fiber(MCF) and coupled into the chip with a local oscillator(LO) light. The polarization state of each signal light is automatically adjusted and aligned with that of the LO light, and then 7 channels of 28-GHz MMW carrying 4-Gb/s QPSK signals are generated by optical heterodyne beating. Automated polarizationcontrol function of each channel is also demonstrated with ～7-ms tuning time and ～27-dB extinction ratio.
基金the National Outstanding YOung Scientist Foundation Under Grant !No.59925208 the National Natural Science Foundation of China
文摘A novel temperature fluctuation synthesis/simultaneous densification process was developed for the preparation of Ti3SiC2 bulk ceramics. In this process. Si is used as an in-situ liquid forming phase and it is favorable for both the solid-liquid synthesis and the densification of Ti3SiC2 rainies. The present work demonstrated that the temperature fluctuation synthesis/simultaneous densification process is one of the most effective and simple methods for the preparation of Ti3SiC2 bulk materials providing relatively low synthesis temperature. short reaction time; and simultaneous synthesis and densification. This work also showed the capability to control the microstructure, e.g., the preferred orientation, of the bulk Ti3SiC2 materials simply by applying the hot pressing pressure at different Stages of the temperature fluctuation process. And textured Ti3SiC2 bulk materials with {002} faces of laminated Ti3SiC2 grains normal to the hot pressing axis were prepared.
文摘In this paper,a new type of optically controllable silicon slab loaded E-plane millimeterwave rectangular waveguide switch is presented.It uses SELFOC lens to couple optical puls-es to silicon slab with optical fiber.The on/off ratio reaches 42dB,the front fringe of suchkind swith is less than 0.05μs,and the insertion loss is less than 1dB in the full band of 26.5GHz to 40GHz.
文摘Transverse thickness difference is an important quality index of non-oriented silicon steel strips. In order to fulfill users＇ accuracy requirements on the transverse thickness of silicon steel and improve the production yield, the factors influencing transverse thickness difference were analyzed. Then the work roll shape, control strategy and incoming hot-rolled strips were optimized. Since the optimization measures were implemented in the actual production, the thickness difference of non-oriented silicon steel has been reduced greatly and fulfilled the requirements placed by users. These measures have achieved remarkable effects.
文摘针对2.5D封装用硅通孔(through silicon via,TSV)硅转接基板批量化生产过程中缺乏可靠性评价与优化技术的问题,提出基于统计过程控制(statistical process control,SPC)的评估控制系统,实现在线工艺状态监控及评价,设计硅转接板测试用工艺控制检测(process control monitor,PCM)结构,阐述自动光学检测(automated optical inspection,AOI)中常见的缺陷对系统可靠性的影响。提出的SPC系统对硅转接板批量化生产良率提升具有重要意义。
