Morphology and Structure of SiO_2 Film Using Thermal Oxidation Process on(111)Silicon Crystals in Dry Oxygen Atmosphere

By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.

The Influence of Pico-Second Pulse Electron Irradiation on the Electrical-Physical Properties of Silicon Crystals

The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.

STUDY OF PROPERTIES AND TOXICOLOGY OF MEDICAL ORGANIC SILICON GEL CRYSTALS

The authors perpared artifical crystals from silicon elastomer, which ensured medical purity, studied how to improve the light transmittance and the characteristics of moulding (sulfurization). This material has been applied to many clinical cases.

The Splittings of p_± States in Infrared Spectra of Thermal Donors in Silicon

p -type CZ silicon crystals annealed at 450℃ have been investigated by low temperature infrared spectroscopy with high resolusion. It has been shown that the 2p± and 3p± bands of neutral thermal donors TD~° are all split into two bands, which have not been reported before. In addition, the concentrations ofindi- vidual TD_i and total TD have been derived from the heights of 2po bands, and the boron concentrations de- rived from that of 320 cm^(-1) band. The room temperature resistivities of samples have been evaluated and the comparison with practically measured resistivities have been made.

MICRO/NANO-MACHINING ON SILICON SURFACE WITH A MODIFIED ATOMIC FORCE MICROSCOPE

To understand the deformation and removal mechanism of material on nano-scale at ultralow loads,a systemic study on AFM micro/nano-machining on single crystal ailicon is conducted. The results indicate that AFM nano- machining has a precisely dimensional controllability and a good surface quality on nanometer scale.A SEM is adopted to observe nano-machined region and chips,the results indicate that the material removal mechanisms change with the applied normal load. An XPS is used to analyze the changes of chemical composition inside and outside the nano-machined region respectively.The nano-indentation which is conducted with the same AFM diamond tip on the machined region shows a big discrepancy compared with that on the macro-scale. The calculated results show higher nano-hardness and elastic modulus than normal values .This phenomenon on be regarded as the indentation size effect(ISE).

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

I- VCurve Characterization of n +/p/p+ Silicon Solar Cell

The analysis of solar cell performance has been done by simulating the external I-V characteristics of n +/p/p + single crystal silicon solar cell under high light intensity and 1.5 air mass (AM). This method allows the maximization of solar cell efficiency. To fabricate low-cost n +/p/p + single crystal silicon solar cells, solid source of doped phosphorous and boron was used.

Growth Conditions of Φ100 mm n <111> FZ Silicon Single Crystal

For large diarneter silicon single crystal, the solid-liquid growth interface is necessary to be a coneaveshape with a certain radius range. If the change of the radius of growth interface is not in this limited range,the growth of DF (dislocation free) sinsle crystal is very difficult. The growth of FZ-Si single crystal was stud-ied. It is found that the growth speed ( 2. 5～2. 7 mm/min) as well as the rotation speed (3. 5 r/min) for theΦ100 mm crystal can be smaller . comparing with the Φ76. 2 mm crystal with the same coil. In order to satisfythe demand of large diameter crystal . the size of coil should be large enough, and the shape should satisfy theneed of the growth interface of crystal. With the increasing of diameter , the heating power , the anode voltageand the strength of electric field within the coil should be increased, and Ar pressure in surrounding circum-stance should also be higher , from 1. 96 × 1 0￣4 Pa to 4. 90 × 10￣4 Pa.According to the above growth factors, three rods of Φ100 mm FZ-Si single crystal were grown success-fully , the weights are 8～10 kg. When the diameter of crystal cone is increased to a limited size, “remeltingarca” will occur in the surface of the crystal , which cause a failure of growing DF crystal , this reason may bethat the recrystalliztion direction has been chansed , as it does.

Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

Single-crystal silicon carbide(SiC)has been widely applied in the military and civil fields because of its excellent physical and chemical properties.However,as is typical in hard-to-machine materials,the good mechanical properties result in surface defects and subsurface damage during precision or ultraprecision machining.In this study,single-and double-varied-load nanoscratch tests were systematically performed on single-crystal 4H-SiC using a nanoindenter system with a Berkovich indenter.The material removal characteristics and cracks under different planes,indenter directions,normal loading rates,and scratch intervals were analyzed using SEM,FIB,and a 3D profilometer,and the mechanisms of material removal and crack propagation were studied.The results showed that the Si-plane of the single-crystal 4H-SiC and edge forward indenter direction are most suitable for material removal and machining.The normal loading rate had little effect on the scratch depth,but a lower loading rate increased the ductile region and critical depth of transition.Additionally,the crack interaction and fluctuation of the depth-distance curves of the second scratch weakened with an increase in the scratch interval,the status of scratches and chips changed,and the comprehensive effects of the propagation and interaction of the three cracks resulted in material fractures and chip accumulation.The calculated and experimental values of the median crack depth also showed good consistency and relativity.Therefore,this study provides an important reference for the high-efficiency and precision machining of single-crystal SiC to ensure high accuracy and a long service life.

Measurement Method of Compressibility and Thermal Expansion Coefficients for Density Standard Liquid at 2329 kg/m^3 based on Hydrostatic Suspension Principle

The accurate measurement on the compressibility and thermal expansion coefficients of density standard liquid at 2329kg/m3（DSL-2329） plays an important role in the quality control for silicon single crystal manufacturing. A new method is developed based on hydrostatic suspension principle in order to determine the two coefficients with high measurement accuracy. Two silicon single crystal samples with known density are immersed into a sealed vessel full of DSL-2329. The density of liquid is adjusted with varying liquid temperature and static pressure, so that the hydrostatic suspension of two silicon single crystal samples is achieved. The compression and thermal expansion coefficients are then calculated by using the data of temperature and static pressure at the suspension state. One silicon single crystal sample can be suspended at different state, as long as the liquid temperature and static pressure function linearly according to a certain mathematical relationship. A hydrostatic suspension experimental system is devised with the maximal temperature control error ±50 μK; Silicon single crystal samples can be suspended by adapting the pressure following the PID method. By using the method based on hydrostatic suspension principle, the two key coefficients can be measured at the same time, and measurement precision can be improved due to avoiding the influence of liquid surface tension. This method was further validated experimentally, where the mixture of 1, 2, 3-tribromopropane and 1,2-dibromoethane is used as DSL-2329. The compressibility and thermal expansion coefficients were measured, as 8.5′10–4 K–1 and 5.4′10–10 Pa–1, respectively.

Effect of Tool Geometry in Nanometric Cutting

With the development of science and technology, the ultra-precision manufacturing of the brittle and hard materials with superior quality have become a new attractive subject. Brittle materials (such as engineering ceramics, optical glass, semiconductor and so on) are widely used in electronics, optics, aeronautics and other high technology fields, so there are important theory significance and practical value to systematically study its machining mechanism and technology. Single crystal silicon is one of the typical brittle materials. Single crystal silicon wafer is a basic component of large and ultralarge integrated the circuit, its surface roughness and flatness are the key factor of improving its integration. With the successfully producing of the large diameter single crystal silicon wafer, its manufacturing technology became attractive subject again. This paper carries out computer simulation of nanometer cutting on single crystal silicon. Molecular Dynamics method which is different from continuous mechanics is employed to investigate the features of grinding energy dissipation, grinding force, stress state and grinding temperature, constructs the atom model of tool and work piece, and explains the microscale mechanism of material remove and surface generation of nanometer(subnanometer) manufacturing. This paper also investigates the variation of cutting force, thrust force, specific energy and surface deformation with different tool edge radius, different depth of cut.

Fourier hologram method using Gerchberg-Saxton algorithm for parallel femtosecond laser processing

In order to improve femtosecond laser throughput,a parallel processing system consisting of liquid crystal on silicon(LCOS)device as spatial light modulator is put forward.A method is described for displaying Fourier hologram on LCOS,and a high uniformity of several diffraction peaks in the computer reconstruction is achieved.Application of this method to the parallel femtosecond laser processing is also demonstrated,and two intersecting rings and three tangent rings are fabricated respectively by one time in the photoresist.

Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm Czochralski silicon crystal growth

Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been sufficiently reported.In this paper,it was focused on the preparation of 400-mm silicon（100） crystal lightly doped with boron from 28-in.hot zones.Resistivity uniformity and oxygen concentration of the silicon crystal were investigated by direct-current（DC） four-point probes method and Fourier transform infrared spectroscopy（FTIR）,respectively.The global heat transfer,melt flow and oxygen distribution were calculated by finite element method（FEM）.The results show that 28-in.hot zones can replace conventional 32 in.ones to grow 400-mm-diameter silicon single crystals.The change in crucible diameter can save energy,reduce cost and improve efficiency.The trend of oxygen distribution obtained in calculations is in good agreement with experimental values.The present model can well predict the 400-mm-diameter silicon crystal growth and is essential for the optimization of furnace design and process condition.

Fundamentals of phase-only liquid crystal on silicon (LCOS) devices

This paper describes the fundamentals of phase-only liquid crystal on silicon(LCOS)technology,which have not been previously discussed in detail.This technology is widely utilized in high efficiency applications for real-time holography and diffractive optics.The paper begins with a brief introduction on the developmental trajectory of phase-only LCOS technology,followed by the correct selection of liquid crystal(LC)materials and corresponding electro-optic effects in such devices.Attention is focused on the essential requirements of the physical aspects of the LC layer as well as the indispensable parameters for the response time of the device.Furthermore,the basic functionalities embedded in the complementary metal oxide semiconductor(CMOS)silicon backplane for phase-only LCOS devices are illustrated,including two typical addressing schemes.Finally,the application of phase-only LCOS devices in real-time holography will be introduced in association with the use of cutting-edge computer-generated holograms.

Superhydrophobic Surfaces Produced by Applying a Self- Assembled Monolayer to Silicon Micro/Nano-Textured Surfaces

A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer(SAM)to silicon micro/nano-textured surfaces is presented in this paper.The micro/nano-textured surfaces on silicon substrates were generated by the aluminum-induced crystallization(AIC)of amorphous silicon(a-Si)technique.Octadecyltrichlorosilane(OTS)SAMs were then applied to the textured surfaces by dip coating.The topography and wetting properties of the resulting surfaces were characterized using scanning electron microscopy(SEM)and a video-based contact angle measurement system.The results show that by introducing OTS SAMs on the silicon micro/nano-textured surfaces,superhydrophobic surfaces with water contact angles(WCAs)of 155°were obtained,as compared to the WCAs of OTS-modified smooth silicon surfaces of about 112°.Surface topography was found to directly influence the WCA as predicted by the Cassie-Baxter model.

Compact, submilliwatt, 2 × 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities

We propose and experimentally demonstrate a 2×2 thermo-optic(TO) crossbar switch implemented by dual photonic crystal nanobeam(PCN)cavities within a silicon-on-insulator(SOI)platform.By thermally tuning the refractive index of silicon,the resonance wavelength of the PCN cavities can be red-shifted.With the help of the ultrasmall mode volumes of the PCN cavities,only～0.16 mW power is needed to change the switching state.With a spectral passband of 0.09 nm at the 1583.75 nm operation wavelength,the insertion loss(IL)and crosstalk(CT)performances were measured as IL(bar)=-0.2 dB,CT(bar)=-15 dB,IL(cross)=-1.5 dB,and CT(cross)=-15 dB.Furthermore,the thermal tuning efficiency of the fabricated device is as high as1.23 nm/mW.

Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO_(2) Film:A Molecular Dynamics Study

Long-lasting constant loading commonly exists in silicon-based microelectronic contact,as well as the chemical mechanical polishing area.In this work,the stress relaxation analysis of single crystal silicon coated with an amorphous SiO_(2) film is performed by varying the maximum indentation depth using molecular dynamics simulation.It is found that during holding,the applied indentation force declines sharply at the beginning and then steadily towards the end of the holding period.The stress relaxation amount of bilayer composites increases as the maximum indentation depth increases.It is also found that the deformation features of SiO_(2) film and silicon substrate during holding are inherited from the loading process.The SiO_(2) film during holding is further densified when the maximum indentation depth is equal to or less than a certain value(5.5 nm for the 0.8-nm film).The amount of generated phases and phase distributions of silicon substrate during holding are affected by the plastic deformation of silicon during loading.

Surface bonding on silicon surfaces as probed by tip-enhanced Raman spectroscopy

Tip-enhanced Raman spectroscopy (TERS) has been used to obtain the Raman signal of surface species on silicon single crystal surfaces without the necessity for surface enhancement by addition of Ag nanoparticles. By illuminating the hydrogen terminated silicon surface covered with a droplet of 4-vinylpyridine with UV light, a 4-ethylpyridine modified silicon surface can be easily obtained. By bringing a scanning tunneling microscope (STM) Au tip with a nanoscale tip apex to a distance of ca. 1 nm from the modified silicon surface, enhanced Raman signals of the silicon phonon vibrations and the surface-bonded 4-ethylpyridine were obtained. The Raman enhancement factor was estimated to be close to 107. By comparing the surface enhanced Raman scattering (SERS) signal obtained after surface enhancement with Ag nanoparticles and the TERS signal of the surface, the advantage of TERS over SERS for characterizing the surface species on substrates becomes apparent: TERS readily affords vibrational information about the system without disturbing it by surface enhancement. In this sense, TERS can be considered a truly non-invasive tool which is ideal for characterizing the actual surface species on substrates.

Application of atmospheric pressure plasma polishing method in machining of silicon ultra-smooth surfaces

The modern optics industry demands rigorous surface quality with minimum defects,which presents challenges to optics machining technologies.There are always certain defects on the final surfaces of the compo-nents formed in conventional contacting machining proc-esses,such as micro-cracks,lattice disturbances,etc.It is especially serious for hard-brittle functional materials,such as crystals,glass and ceramics because of their special characteristics.To solve these problems,the atmospheric pressure plasma polishing(APPP)method is developed.It utilizes chemical reactions between reactive plasma and surface atoms to perform atom-scale material removal.Since the machining process is chemical in nature,APPP avoids the surface/subsurface defects mentioned above.As the key component,a capacitance coupled radio-fre-quency plasma torch is first introduced.In initial opera-tions,silicon wafers were machined as samples.Before applying operations,both the temperature distribution on the work-piece surface and the spatial gas diffusion in the machining process were studied qualitatively by finite element analysis.Then the following temperature measurement experiments demonstrate the formation of the temperature gradient on the wafer surface predicted by the theoretical analysis and indicated a peak temper-ature about 90uC in the center.By using commercialized form talysurf,the machined surface was detected and the result shows regular removal profile that corresponds well to the flow field model.Moreover,the removal profile also indicates a 32 mm^(3)/min removal rate.By using atomic force microscopy(AFM),the surface roughness was also measured and the result demonstrates an Ra 0.6 nm surface roughness.Then the element composition of the machined surface was detected and analyzed by X-ray photoelectron spectroscopy(XPS)technology.The results also demonstrate the occurrence of the anticipated main reactions.All the experiments have proved that this atmospheric pressure plasma polishing method has the potential to achieve the manufacture of high quality optical surfaces.

Hybrid silicon slotted photonic crystal waveguides:how does third order nonlinear performance scale with slow light?

We investigate in this paper the influence of slow light on the balance between the Kerr and two-photon absorption(TPA) processes in silicon slotted hybrid nonlinear waveguides. Three typical silicon photonic waveguide geometries are studied to estimate the influence of the light slow-down factor on the mode field overlap with the silicon region, as well as on the complex effective nonlinear susceptibility. It is found that slotted photonic crystal modes tend to focalize in their hollow core with increasing group index(n_G) values. Considering a hybrid integration of nonlinear polymers in such slotted waveguides, a relative decrease of the TPA process by more factor of 2 is predicted from n_G=10 to n_G=50. As a whole, this work shows that the relative influence of TPA decreases for slotted waveguides operating in the slow light regime, making them a suitable platform for third-order nonlinear optics.