A new and innovative detector system based on a silicon strip detector dedicated to the study of the reaction induced by lighter radioactive beams is described herein.The detector system consists of five sets of three...A new and innovative detector system based on a silicon strip detector dedicated to the study of the reaction induced by lighter radioactive beams is described herein.The detector system consists of five sets of three types of telescopes,which are successfully used to measure the angular distributions of both elastic scattering and breakup simultaneously, on the Radioactive Ion Beam Line in Lanzhou at Heavy Ion Research Facility in Lanzhou. This silicon detector array is used to measure the elastic scattering angular distributions of ^(11) Be on a ^(208) Pb target at E_(lab) = 140 and 209 MeV. A comparison of the Monte Carlo simulations with the experimental results shows a reasonable consistency.展开更多
In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and perfo...In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.展开更多
The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufac...The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area.The leakage current under the full depletion bias voltage of-16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region.Such an event is only about 0.6% of all events and can be neglected in an actual application.展开更多
A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC （VA140...A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC （VA140） from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.展开更多
A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0...A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both sides.Good energy resolutions have been achieved with0.65-0.80% for the junction strips and 0.85-1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments.展开更多
The readout electronics for a prototype soft X-ray spectrometer based on silicon drift detector(SDD),for precisely measuring the energy and arrival time of X-ray photons is presented in this paper.The system mainly co...The readout electronics for a prototype soft X-ray spectrometer based on silicon drift detector(SDD),for precisely measuring the energy and arrival time of X-ray photons is presented in this paper.The system mainly consists of two parts,i.e.,an analog electronics section(including a pre-amplifier,a signal shaper and filter,a constant fraction timing circuit,and a peak hold circuit)and a digital electronics section(including an ADC and a TDC).Test results with X-ray sources show that an energy dynamic range of 1-10 keV with an integral nonlinearity of less than 0.1%can be achieved,and the energy resolution is better than 160 eV @ 5.9 keV FWHM.Using a waveform generator,test results also indicate that time resolution of the electronics system is about 3.7 ns,which is much less than the transit time spread of SDD(<100 ns)and satisfies the requirements of future applications.展开更多
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-...Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.展开更多
A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration i...A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration is high up to 7.8 × 10-12. The calibration curve of boron concentration in high-purity silicon has been obtained, from which the experimental value of calibration factor of boron concentration in silicon is demonstrated to be 1.15 × 1013 cm-1.展开更多
Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has dras...Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.展开更多
Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proto...Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proton recoil detector was simulated, which consists of hydrogenous converter, i.e., high-density polyethylene(HDPE) for generating recoil protons by means of neutron elastic scattering(n, p) reaction and semiconductor material SiC, for generating a detectable electrical signal upon transport of recoil protons through it. SiC is considered in order to overcome the various factors associated with conventional Si-based devices such as operability in a harsh radiation environment, as often encountered in nuclear facilities. Converter layer thickness is optimized by considering 10~9 neutron events of different monoenergetic neutron sources as well as ^(241)Am-Be neutron spectrum. It is found that the optimized thickness for neutron energy range of 1–10 MeV is ~400 μm. However, the efficiency of fast neutron detection is estimated to be only 0.112%,which is considered very low for meaningful and reliable detection of neutrons. To overcome this problem, a stacked juxtaposition of converter layer between SiC layers has been analyzed in order to achieve high efficiency. It is noted that a tenfold efficiency improvement has been obtained—1.04% for 10 layers stacked configuration vis-à-vis 0.112% of single converter layer detector. Further simulation of the stacked detector with respect to variable converter thickness has been performed to achieve the efficiency as high as ~3.85% with up to 50 stacks.展开更多
Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upg...Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upgrade. The detailed modeling shows that the electric field in irradiated silicon detectors can easily be manipulated by the filling state of two deep defect levels at cryogenic temperature. Advanced radiation hard detectors using charge or current injection and the current injected detectors(CID) were developed by RD39. The results show that CID detectors can be operated at the temperature of 100?200 K with much improved charge collection efficiency(CCE) as compared with RT operation. Future studies are developing ultra-hard cryogenic silicon detectors for the LHC upgrade, where the radiation hardness is required up to 1016 neq/cm2, at which trapping will limit the charge collection depth to the range of 20 to 50 μm regardless of the depletion depth. The key of our approach is to use freeze-out trapping to affect CCE.展开更多
基金supported by the National Natural Science Foundation of China(Nos.U1432247,11575256,and U1632138)the CAS program of Light of West China Program under Grant(No.Y601030XB0)the National key R&D Program of China(No.2018YFA0404403)
文摘A new and innovative detector system based on a silicon strip detector dedicated to the study of the reaction induced by lighter radioactive beams is described herein.The detector system consists of five sets of three types of telescopes,which are successfully used to measure the angular distributions of both elastic scattering and breakup simultaneously, on the Radioactive Ion Beam Line in Lanzhou at Heavy Ion Research Facility in Lanzhou. This silicon detector array is used to measure the elastic scattering angular distributions of ^(11) Be on a ^(208) Pb target at E_(lab) = 140 and 209 MeV. A comparison of the Monte Carlo simulations with the experimental results shows a reasonable consistency.
基金supported by the National Natural Science Foundation of China(Nos.11875274 and U1232202)。
文摘In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.
基金Supported by National Basic Research Program of China(2013CB834404)National Natural Science Foundation of China(10727505,10735100,11375268)
文摘The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area.The leakage current under the full depletion bias voltage of-16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region.Such an event is only about 0.6% of all events and can be neglected in an actual application.
基金the DAMPE project of the Chinese Strategic Priority Research Program in Space Science
文摘A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC （VA140） from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.
基金supported by the National Natural Science Foundation of China(Nos.U1432246,U1632136,U1432127,11375268,11635015,and 11475263)the National Basic Research Program of China(No.2013CB834404)
文摘A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both sides.Good energy resolutions have been achieved with0.65-0.80% for the junction strips and 0.85-1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments.
基金supported by the National Natural Science Foundation of China(Grant No.11205154)
文摘The readout electronics for a prototype soft X-ray spectrometer based on silicon drift detector(SDD),for precisely measuring the energy and arrival time of X-ray photons is presented in this paper.The system mainly consists of two parts,i.e.,an analog electronics section(including a pre-amplifier,a signal shaper and filter,a constant fraction timing circuit,and a peak hold circuit)and a digital electronics section(including an ADC and a TDC).Test results with X-ray sources show that an energy dynamic range of 1-10 keV with an integral nonlinearity of less than 0.1%can be achieved,and the energy resolution is better than 160 eV @ 5.9 keV FWHM.Using a waveform generator,test results also indicate that time resolution of the electronics system is about 3.7 ns,which is much less than the transit time spread of SDD(<100 ns)and satisfies the requirements of future applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)the Natural Science Foundation of Beijing Municipality of China(Grant No.4192064)+1 种基金the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the JKW Project of China(Grant No.31512060106)。
文摘Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.
文摘A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration is high up to 7.8 × 10-12. The calibration curve of boron concentration in high-purity silicon has been obtained, from which the experimental value of calibration factor of boron concentration in silicon is demonstrated to be 1.15 × 1013 cm-1.
文摘Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.
基金supported by the grant of a research fellowship from Indira Gandhi Centre for Atomic Research,Department of Atomic Energy,India
文摘Geant4 based Monte Carlo study has been carried out to assess the improvement in efficiency of the planar structure of Silicon Carbide(SiC)-based semiconductor fast neutron detector with the stacked structure. A proton recoil detector was simulated, which consists of hydrogenous converter, i.e., high-density polyethylene(HDPE) for generating recoil protons by means of neutron elastic scattering(n, p) reaction and semiconductor material SiC, for generating a detectable electrical signal upon transport of recoil protons through it. SiC is considered in order to overcome the various factors associated with conventional Si-based devices such as operability in a harsh radiation environment, as often encountered in nuclear facilities. Converter layer thickness is optimized by considering 10~9 neutron events of different monoenergetic neutron sources as well as ^(241)Am-Be neutron spectrum. It is found that the optimized thickness for neutron energy range of 1–10 MeV is ~400 μm. However, the efficiency of fast neutron detection is estimated to be only 0.112%,which is considered very low for meaningful and reliable detection of neutrons. To overcome this problem, a stacked juxtaposition of converter layer between SiC layers has been analyzed in order to achieve high efficiency. It is noted that a tenfold efficiency improvement has been obtained—1.04% for 10 layers stacked configuration vis-à-vis 0.112% of single converter layer detector. Further simulation of the stacked detector with respect to variable converter thickness has been performed to achieve the efficiency as high as ~3.85% with up to 50 stacks.
文摘Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upgrade. The detailed modeling shows that the electric field in irradiated silicon detectors can easily be manipulated by the filling state of two deep defect levels at cryogenic temperature. Advanced radiation hard detectors using charge or current injection and the current injected detectors(CID) were developed by RD39. The results show that CID detectors can be operated at the temperature of 100?200 K with much improved charge collection efficiency(CCE) as compared with RT operation. Future studies are developing ultra-hard cryogenic silicon detectors for the LHC upgrade, where the radiation hardness is required up to 1016 neq/cm2, at which trapping will limit the charge collection depth to the range of 20 to 50 μm regardless of the depletion depth. The key of our approach is to use freeze-out trapping to affect CCE.
