For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacemen...For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.展开更多
By combining a silicon-based lithium niobate modulator and a silicon-based Si3N4resonator with silicon-based photonics technology,a highly systematic design of a hybrid integrated optical gyroscope with enhanced recip...By combining a silicon-based lithium niobate modulator and a silicon-based Si3N4resonator with silicon-based photonics technology,a highly systematic design of a hybrid integrated optical gyroscope with enhanced reciprocity sensitivity and a dual micro-ring structure is proposed for the first time in this paper.The relationship between the device's structural parameters and optical performance is also analyzed by constructing a complete simulation link,which provides a theoretical design reference to improve the system's sensitivity.When the wavelength is 1550 nm,the conversion frequency of the dual-ring optical path is 50 MHz,the coupling coefficient is 0.2,and the radius R is 1000μm,the quality factor of the silicon-based Si_(3)N_(4)resonator is 2.58×10^(5),which is 1.58 times that of the silicon-on-insulator resonator.Moreover,the effective number of times the light travels around the ring before leaving the micro-ring is 5.93,which is 1.62 times that of the silicon-on-insulator resonator.The work fits the gyro dynamic output diagram,and solves the problem of low sensitivity at low speed by setting the phase offset.This results provide a basis for the further optimization of design and chip processing of the integrated optical gyroscope.展开更多
In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types...In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.展开更多
Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moo...Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era.Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed,less power dissipation,and lower cost in IC industry,because their COMS compatibility,fast response,and high monolithic integration capability.Particularly,compared with other on-chip resonators(e.g.microrings,2D photonic crystal cavities)silicon-on-insulator(SOI)-based photonic crystal nanobeam cavity(PCNC)has emerged as a promising platform for on-chip integration,due to their attractive properties of ultra-high Q/V,ultra-compact footprints and convenient integration with silicon bus-waveguides.In this paper,we present a comprehensive review on recent progress of on-chip PCNC devices for lasing,modulation,switching/filting and label-free sensing,etc.展开更多
Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical ...Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.展开更多
Due to the indirect bandgap nature,the widely used silicon CMOS is very inefficient at light emitting.The integration of silicon lasers is deemed as the‘Mount Everest’for the full take-up of Si photonics.The major c...Due to the indirect bandgap nature,the widely used silicon CMOS is very inefficient at light emitting.The integration of silicon lasers is deemed as the‘Mount Everest’for the full take-up of Si photonics.The major challenge has been the materials dissimilarity caused impaired device performance.We present a brief overview of the recent advances of integratedⅢ-Ⅴlaser on Si.We will then focus on the heterogeneous direct/adhesive bonding enabling methods and associated light coupling structures.A selected review of recent representative novel heterogeneously integrated Si lasers for emerging applications like spectroscopy,sensing,metrology and microwave photonics will be presented,including DFB laser array,ultra-dense comb lasers and nanolasers.Finally,the challenges and opportunities of heterogeneous integration approach are discussed.展开更多
The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received dig...The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers (RDLs), TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient ($11) and signal transmission coefficient ($21) are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance (RLGC) elements of the TSV channel are iterated from scattering (S)-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure (HFSS) simulation software by Ansoft.展开更多
Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwav...Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwave waveform synthesis,signal processing,and communications.Several techniques exist to generate optical frequency combs,such as mode-locked lasers,Kerr micro-resonators,and electro-optic modulation.Important characteristics of optical frequency combs include the number of comb lines,their spacing,spectral shape and/or flatness,and intensity noise.While mode-locked lasers and Kerr micro-resonators can be used to obtain a large number of comb lines compared to electro-optic modulation,the latter provides increased flexibility in tuning the comb spacing.For some applications in optical communications and microwave photonics,a high degree of integration may be more desirable over a very large number of comb lines.In this paper,we review recent progress on integrated electro-optic frequency comb generators,including those based on indium phosphide,lithium niobate,and silicon photonics.展开更多
Chip-scale programmable optical signal processors are often used to flexibly manipulate the optical signals for satisfying the demands in various applications,such as lidar,radar,and artificial intelligence.Silicon ph...Chip-scale programmable optical signal processors are often used to flexibly manipulate the optical signals for satisfying the demands in various applications,such as lidar,radar,and artificial intelligence.Silicon photonics has unique advantages of ultra-high integration density as well as CMOS compatibility,and thus makes it possible to develop large-scale programmable optical signal processors.The challenge is the high silicon waveguides propagation losses and the high calibration complexity for all tuning elements due to the random phase errors.In this paper,we propose and demonstrate a programmable silicon photonic processor for the first time by introducing low-loss multimode photonic waveguide spirals and low-random-phase-error Mach-Zehnder switches.The present chip-scale programmable silicon photonic processor comprises a 1×4 variable power splitter based on cascaded Mach-Zehnder couplers(MZCs),four Ge/Si photodetectors,four channels of thermally-tunable optical delaylines.Each channel consists of a continuously-tuning phase shifter based on a waveguide spiral with a micro-heater and a digitally-tuning delayline realized with cascaded waveguide-spiral delaylines and MZSs for 5.68 ps time-delay step.Particularly,these waveguide spirals used here are designed to be as wide as 2μm,enabling an ultralow propagation loss of 0.28 dB/cm.Meanwhile,these MZCs and MZSs are designed with 2-μm-wide arm waveguides,and thus the random phase errors in the MZC/MZS arms are negligible,in which case the calibration for these MZSs/MZCs becomes easy and furthermore the power consumption for compensating the phase errors can be reduced greatly.Finally,this programmable silicon photonic processor is demonstrated successfully to verify a number of distinctively different functionalities,including tunable time-delay,microwave photonic beamforming,arbitrary optical signal filtering,and arbitrary waveform generation.展开更多
SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同...SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同母线电压下的Si C MOSFET短路故障,文中提出一种基于漏源电压积分的自适应快速短路保护方法(drain-sourcevoltageintegration-basedadaptivefast short-circuit protection method,DSVI-AFSCPM),研究所提出的DSVI-AFSCPM在硬开关短路(hardswitchingfault,HSF)和负载短路(fault under load,FUL)条件下的保护性能,进而研究不同母线电压对DSVI-AFSCPM的作用机理。同时,探究Si CMOSFET工作温度对其响应速度的影响。最后,搭建实验平台,对所提出的DSVI-AFSCPM在发生硬开关短路和负载短路时不同母线电压、不同工作温度下的保护性能进行实验测试。实验结果表明,所提出的DSVI-AFSCPM在不同母线电压下具有良好的保护速度自适应性,即母线电压越高,短路保护速度越快,并且其响应速度受Si CMOSFET工作温度影响较小,两种短路工况下工作温度从25℃变化到125℃,短路保护时间变化不超过90 ns。因此,该文为Si CMOSFET在不同母线电压下的可靠使用提供一定技术支撑。展开更多
In recent years,optical phased arrays(OPAs)have attracted great interest for their potential applications in light detection and ranging(Li DAR),free-space optical communications(FSOs),holography,and so on.Photonic in...In recent years,optical phased arrays(OPAs)have attracted great interest for their potential applications in light detection and ranging(Li DAR),free-space optical communications(FSOs),holography,and so on.Photonic integrated circuits(PICs)provide solutions for further reducing the size,weight,power,and cost of OPAs.In this paper,we review the recent development of photonic integrated OPAs.We summarize the typical architecture of the integrated OPAs and their performance.We analyze the key components of OPAs and evaluate the figure of merit for OPAs.Various applications in Li DAR,FSO,imaging,biomedical sensing,and specialized beam generation are introduced.展开更多
基金Funded by the High Technology Research and Development Programme of China (2007AA04Z315)
文摘For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.
基金Project supported by the science and technology general project of Beijing Municipal Education Commission(Grant No.KM202111232019)Beijing Municipal Natural Science Foundation(Grant No.2214058)+4 种基金the Discipline Innovation Program of Higher Education(Grant No.D17021)the Open Project of the State Key Laboratory of Integrated Optoelectronics(Grant No.IOSKL2020KF22)Beijing Great Wall Scholars Program(Grant No.CIT&TCD20190323)the National Natural Science Foundation of China(Grant No.61875237)Beijing Youth Talent Support Program(Grant No.Z2019042)。
文摘By combining a silicon-based lithium niobate modulator and a silicon-based Si3N4resonator with silicon-based photonics technology,a highly systematic design of a hybrid integrated optical gyroscope with enhanced reciprocity sensitivity and a dual micro-ring structure is proposed for the first time in this paper.The relationship between the device's structural parameters and optical performance is also analyzed by constructing a complete simulation link,which provides a theoretical design reference to improve the system's sensitivity.When the wavelength is 1550 nm,the conversion frequency of the dual-ring optical path is 50 MHz,the coupling coefficient is 0.2,and the radius R is 1000μm,the quality factor of the silicon-based Si_(3)N_(4)resonator is 2.58×10^(5),which is 1.58 times that of the silicon-on-insulator resonator.Moreover,the effective number of times the light travels around the ring before leaving the micro-ring is 5.93,which is 1.62 times that of the silicon-on-insulator resonator.The work fits the gyro dynamic output diagram,and solves the problem of low sensitivity at low speed by setting the phase offset.This results provide a basis for the further optimization of design and chip processing of the integrated optical gyroscope.
基金supported by the National Key R&D Program of China(No.2018YFA0404404)the National Natural Science Foundation of China(Nos.11635015,U1732145,11705285,11805280,U1867212,and 11961131012)the Continuous Basic Scientific Research Project(No.WDJC-2019-13).
文摘In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.
基金This work was supported by the National Key R&D Program of China(Grant No.2016YFA0301302 and No.2018YFB 2200401)the National Natural Science Foundation of China(Grant Nos.11974058,11825402,11654003,61435001)+4 种基金Beijing Academy of Quantum Information Sciences(Grant No.Y18G20)Key R&D Program of Guangdong Province(Grant No.2018B030329001)Beijing Nova Program(Grant No.Z201100006820125)from Beijing Municipal ScienceTechnology Commission,Fundamental Research Funds for the Central Universities(Grant No.2018XKJC05)the High Performance Computing Platform of Peking University.
文摘Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era.Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed,less power dissipation,and lower cost in IC industry,because their COMS compatibility,fast response,and high monolithic integration capability.Particularly,compared with other on-chip resonators(e.g.microrings,2D photonic crystal cavities)silicon-on-insulator(SOI)-based photonic crystal nanobeam cavity(PCNC)has emerged as a promising platform for on-chip integration,due to their attractive properties of ultra-high Q/V,ultra-compact footprints and convenient integration with silicon bus-waveguides.In this paper,we present a comprehensive review on recent progress of on-chip PCNC devices for lasing,modulation,switching/filting and label-free sensing,etc.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
文摘Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.
基金supported by Natural Science Foundation of China (NSFC) under Grant 61805137Natural Science Foundation of Shanghai under Grant 19ZR1475400+1 种基金Shanghai Sailing Program under Grant 18YF1411900the Open Project Program of Wuhan National Laboratory for Optoelectronics No. 2018WNLOKF012
文摘Due to the indirect bandgap nature,the widely used silicon CMOS is very inefficient at light emitting.The integration of silicon lasers is deemed as the‘Mount Everest’for the full take-up of Si photonics.The major challenge has been the materials dissimilarity caused impaired device performance.We present a brief overview of the recent advances of integratedⅢ-Ⅴlaser on Si.We will then focus on the heterogeneous direct/adhesive bonding enabling methods and associated light coupling structures.A selected review of recent representative novel heterogeneously integrated Si lasers for emerging applications like spectroscopy,sensing,metrology and microwave photonics will be presented,including DFB laser array,ultra-dense comb lasers and nanolasers.Finally,the challenges and opportunities of heterogeneous integration approach are discussed.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204044)
文摘The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers (RDLs), TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient ($11) and signal transmission coefficient ($21) are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance (RLGC) elements of the TSV channel are iterated from scattering (S)-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure (HFSS) simulation software by Ansoft.
基金This research was supported in part by the Natural Sciences and Engineering Research Council of Canada and the Fonds du Québec–Nature et Technologies.
文摘Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwave waveform synthesis,signal processing,and communications.Several techniques exist to generate optical frequency combs,such as mode-locked lasers,Kerr micro-resonators,and electro-optic modulation.Important characteristics of optical frequency combs include the number of comb lines,their spacing,spectral shape and/or flatness,and intensity noise.While mode-locked lasers and Kerr micro-resonators can be used to obtain a large number of comb lines compared to electro-optic modulation,the latter provides increased flexibility in tuning the comb spacing.For some applications in optical communications and microwave photonics,a high degree of integration may be more desirable over a very large number of comb lines.In this paper,we review recent progress on integrated electro-optic frequency comb generators,including those based on indium phosphide,lithium niobate,and silicon photonics.
基金We are grateful for financial supports from National Major Research and Development Program(No.2018YFB2200200)National Science Fund for Distinguished Young Scholars(61725503)+1 种基金Zhejiang Provincial Natural Science Foundation(LZ18F050001,LGF21F050003)National Natural Science Foundation of China(NSFC)(91950205,6191101294,11861121002,61905209,62175214,62111530147).
文摘Chip-scale programmable optical signal processors are often used to flexibly manipulate the optical signals for satisfying the demands in various applications,such as lidar,radar,and artificial intelligence.Silicon photonics has unique advantages of ultra-high integration density as well as CMOS compatibility,and thus makes it possible to develop large-scale programmable optical signal processors.The challenge is the high silicon waveguides propagation losses and the high calibration complexity for all tuning elements due to the random phase errors.In this paper,we propose and demonstrate a programmable silicon photonic processor for the first time by introducing low-loss multimode photonic waveguide spirals and low-random-phase-error Mach-Zehnder switches.The present chip-scale programmable silicon photonic processor comprises a 1×4 variable power splitter based on cascaded Mach-Zehnder couplers(MZCs),four Ge/Si photodetectors,four channels of thermally-tunable optical delaylines.Each channel consists of a continuously-tuning phase shifter based on a waveguide spiral with a micro-heater and a digitally-tuning delayline realized with cascaded waveguide-spiral delaylines and MZSs for 5.68 ps time-delay step.Particularly,these waveguide spirals used here are designed to be as wide as 2μm,enabling an ultralow propagation loss of 0.28 dB/cm.Meanwhile,these MZCs and MZSs are designed with 2-μm-wide arm waveguides,and thus the random phase errors in the MZC/MZS arms are negligible,in which case the calibration for these MZSs/MZCs becomes easy and furthermore the power consumption for compensating the phase errors can be reduced greatly.Finally,this programmable silicon photonic processor is demonstrated successfully to verify a number of distinctively different functionalities,including tunable time-delay,microwave photonic beamforming,arbitrary optical signal filtering,and arbitrary waveform generation.
基金supported by the Key Research and Development Program of Hubei Province(No.2021BAA004)the Innovation Project of Optics Valley Laboratory(Nos.OVL2021BG004 and OVL2023ZD004)+1 种基金the National Natural Science Foundation of China(NSFC)(Nos.62125503,62261160388,and 62105115)the Natural Science Foundation of Hubei Province of China(No.2023AFA028)。
文摘In recent years,optical phased arrays(OPAs)have attracted great interest for their potential applications in light detection and ranging(Li DAR),free-space optical communications(FSOs),holography,and so on.Photonic integrated circuits(PICs)provide solutions for further reducing the size,weight,power,and cost of OPAs.In this paper,we review the recent development of photonic integrated OPAs.We summarize the typical architecture of the integrated OPAs and their performance.We analyze the key components of OPAs and evaluate the figure of merit for OPAs.Various applications in Li DAR,FSO,imaging,biomedical sensing,and specialized beam generation are introduced.