Quadrature error and offset error suppression circuitry for silicon micro-gyroscope

The reasons for inducing quadrature error and offset error are analyzed and the expressions of quadrature error and offset error are induced. The open-loop system analysis indicates that, in order to avoid the appearance of harmonic peaks, the frequency difference δf between drive mode and sense mode must be less than 1/（2Qy）. In order to eliminate the effects of the quadrature error and the offset error, as well as the inherent non- linearity in the capacitance-type sensors, a closed-loop feedback control circuit with quadrature correction is designed. The experimental results indicate that the quadrature error and offset error are corrected. By comparing with open-loop detection, the closed-loop feedback control circuit with quadrature correction decreases the non-linearity of the scale factor from 16. 02% to 0. 35 %, widens the maximum rate capability from ± 270 （°）/s to ± 370 （°）/s and increases the stability of zero bias from 155. 2 （°）/h to 60. 6 （°）/h.

Construction and performance test of charged particle detector array for MATE

A charged particle array named MATE-PA,which serves as an auxiliary detector system for a Multi-purpose Active-target Time projection chamber used in nuclear astrophysical and exotic beam Experiments(MATE),was constructed.The array comprised of 20 single-sided strip-silicon detectors covering approximately 10%of the solid angle.The detectors facilitated the detection of reaction-induced charged particles that penetrate the active volume of the MATE.The performance of MATE-PA has been experimentally studied using an alpha source and a 36-MeV 14 N beam injected into the MATE chamber on the radioactive ion beam line in Lanzhou(RIBLL).The chamber was filled with a gas mixture of 95%4 He and 5%CO_(2) at a pressure of 500 mbar.The results indicated good separation of light-charged particles using the forward double-layer silicon detectors of MATE-PA.The energy resolution of the Si detectors was deduced to be approximately 1%(σ)for an energy loss of approximately 10 MeV caused by theαparticles.The inclusion of MATE-PA improves particle identification and increases the dynamic range of the kinetic energy of charged particles,particularly that of theαparticles,up to approximately 15 MeV.

Polarization-Insensitive Silica on Silicon Arrayed Waveguide Grating Design

A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

Silicon detector array for radioactive beam experiments at HIRFL-RIBLL

A new and innovative detector system based on a silicon strip detector dedicated to the study of the reaction induced by lighter radioactive beams is described herein.The detector system consists of five sets of three types of telescopes,which are successfully used to measure the angular distributions of both elastic scattering and breakup simultaneously, on the Radioactive Ion Beam Line in Lanzhou at Heavy Ion Research Facility in Lanzhou. This silicon detector array is used to measure the elastic scattering angular distributions of ^(11) Be on a ^(208) Pb target at E_(lab) = 140 and 209 MeV. A comparison of the Monte Carlo simulations with the experimental results shows a reasonable consistency.

A 32-channel 100 GHz wavelength division multiplexer by interleaving two silicon arrayed waveguide gratings

A 32-channel wavelength division multiplexer with 100 GHz spacing is designed and fabricated by interleaving two silicon arrayed waveguide gratings(AWGs).It has a parallel structure consisting of two silicon 16-channel AWGs with200 GHz spacing and a Mach-Zehnder interferometer(MZI)with 200 GHz free spectral range.The 16 channels of one silicon AWG are interleaved with those of the other AWG in spectrum,but with an identical spacing of 200 GHz.For the composed wavelength division multiplexer,the experiment results reveal 32 wavelength channels in C-band,a wavelength spacing of 100 GHz,and a channel crosstalk lower than-15 dB.

Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

Polycrystalline thick film of zinc oxide （ZnO） is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array （Si-NPA）, by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of -10 μm. The film resistivity of ZnO/SiNPA is measured to be -8.9Ωcm by the standard four probe method. The lengthwise Ⅰ-Ⅴ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.

Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning

Solid-state nanopores with controllable pore size and morphology have huge application potential.However,it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost.In this study,a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations.Through a SVM algorithm,the relationship between the nanopore structures and the fabrication conditions,including the etching solution,etching time,dopant type,and concentration,was modeled and experimentally verified.Based on this,a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained.The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores,nanostructures,and devices.

Plasma jet array treatment to improve the hydrophobicity of contaminated HTV silicone rubber

An atmospheric-pressure plasma jet array specially designed for HTV silicone rubber treatment is reported in this paper. Stable plasma containing highly energetic active particles was uniformly generated in the plasma jet array. The discharge pattern was affected by the applied voltage. The divergence phenomenon was observed at low gas flow rate and abated when the flow rate increased.Temperature of the plasma plume is close to room temperature which makes it feasible for temperature-sensitive material treatment. Hydrophobicity of contaminated HTV silicone rubber was significantly improved after quick exposure of the plasma jet array, and the effective treatment area reached 120 mm？×？50 mm（length？×？width）. Reactive particles in the plasma accelerate accumulation of the hydrophobic molecules, namely low molecular weight silicone chains, on the contaminated surface, which result in a hydrophobicity improvement of the HTV silicone rubber.

Improved Performance of a Wavelength-Tunable Arrayed Waveguide Grating in Silicon on Insulator

The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated, including the crosstalk, insertion loss and the wavelength tuning efficiency. A reduced impact of the fabrication process on the AWG is achieved by the design of bi-level tapers. The wavelength tuning of the AWG is achieved according to the thermo-optic effect of silicon, and uniform heating of the silicon waveguide layer is achieved by optimizing the heater design. The fabricated AWG shows a minimum crosstalk of 16 dB, a maximum insertion loss of 3.91 dB and a wavelength tuning efficiency of 8.92 nm/W, exhibiting a ～8 dB improvement of crosstalk, ～2.1 dB improvement of insertion loss and ～5 nm/W improvement of wavelength tuning efficiency, compared to our previous reported results.

Ordered silicon nanorod arrays with controllable geometry and robust hydrophobicity

Highly ordered silicon nanorod（Si NR） arrays with controllable geometry are fabricated via nanosphere lithography and metal-assisted chemical etching. It is demonstrated that the key to achieving a high-quality metal mask is to construct a non-close-packed template that can be removed with negligible damage to the mask. Hydrophobicity of Si NR arrays of different geometries is also studied. It is shown that the nanorod structures are effectively quasi-hydrophobic with a contact angle as high as 142°, which would be useful in self-cleaning nanorod-based device applications.

Time-Resolved Photoluminescence Study of Silicon Nanoporous Pillar Array

A silicon nanoporous pillar array （Si-NPA） is thought to be a promising functional substrate for constructing a variety of Si-based optoelectronic nanodevices, due to its unique hierarchical structure and enhanced physical properties. This makes the in-depth understanding of the photoluminescence （PL） of Si-NPA crucial for both scientific research and practical applications. In this work, the PL properties of Si-NPA are studied by measuring both the steady-state and time-resolved PL spectrum. Based on the experimental data, the three PL bands of Si-NPA, i.e., the ultraviolet band, the purple-blue plateau and the red band are assigned to the oxygen-excess defects in Si oxide or silanol groups at the surface of Si nanocrystallites （nc-Si）, oxygen deficiency defects in Si oxide, and band-to-band transition of nc-Si under the frame of quantum confinement combining with the surface states like Si=O and Si-O^i bonds at the surface of nc-Si, respectively. These results may provide some novel insight into the PL process of Si-NPA and may be helpful for clarifying the PL mechanism.

Design of MEMS C-Band Microstrip Antenna Array Based on High-Resistance Silicon for Intelligent Ammunition

In recent years, microstrip antennas have been more widely applied in satellite communications, mobile phones, unmanned aerial vehicle （UAV）, and weapons. A micro-electro-mechanical systems-based （MEMS-based） high-resistance silicon C-band microstrip antenna array has been designed for the intelligent ammunition. The center frequency is 4.5 GHz. A cavity has been designed in substrate to reduce the dielectric constant of silicon and high-resistance silicon has been used as the material of substrate to improve the gain of antenna. It is very easy to be manufactured by using MEMS technology because of the improved structure of the antenna. The results show that the gain of the antenna is 8 dB and voltage standing wave ratio （VSWR） is less than 2 by the analysis and simulation in high freauencv structure simulator （HFSS）.

Fabrication of Silicon Microlens Arrays Using Ion Beam Milling

A spherical mask for the fabrication of microlens arrays was prepared by melting photoresist, and the spherical photoresist shape was transferred into a silicon substrate using ion beam milling. The ion beam milling process was computer simulated using the Sigmund ion beam sputtering theory of collision cascades. The experiment results show that microlens arrays can be effectively formed at low substrate temperature of less than 200 ℃.Shapes and dimensions of photoresist masks and silicon microlens arrays were examined by the scanning electron microscope and tested by the surface stylus measurement.

New digital drive phase control for improving bias stability of silicon MEMS gyroscope

In order to improve the bias stability of the micro-electro mechanical system（MEMS） gyroscope and reduce the impact on the bias from environmental temperature,a digital signal processing method is described for improving the accuracy of the drive phase in the gyroscope drive mode.Through the principle of bias signal generation,it can be concluded that the deviation of the drive phase is the main factor affecting the bias stability.To fulfill the purpose of precise drive phase control,a digital signal processing circuit based on the field-programmable gate array（FPGA） with the phase-lock closed-loop control method is described and a demodulation method for phase error suppression is given.Compared with the analog circuit,the bias drift is largely reduced in the new digital circuit and the bias stability is improved from 60 to 19 °/h.The new digital control method can greatly increase the drive phase accuracy,and thus improve the bias stability.

A novel closed-loop vacuum silicon microgyroscope

A novel closed-loop control strategy of a silicon microgyroscope （SMG） is proposed. The SMG is sealed in metal can package in drive and sense modes and works under the air pressure of 10 Pa. Its quality factor reaches greater than l0 000. Self-oscillating and closed-loop methods based on electrostatic force feedback are adopted in both measure and control circuits. Both single side driving and sensing methods are used to simplify the drive circuit. These dual channel decomposition and reconstruction closed loops are applied in sense modes. The testing results demonstrate that useful signals and guadrature signals do not interact with each other because of the decoupling of their phases. Under the condition of a scale factor of 9. 6 mV/（（°） .s）, in a full measurement range of±300 （°）/s, the zero bias stability reaches 28 （°）/h with a nonlinear coefficient of 400 × 10^-6 and a simulated bandwidth of more than 100 Hz. The overall performance is improved by two orders of magnitude in comparison to that at atmospheric pressure.

Compact 16-channel integrated charge-sensitive preamplifier module for silicon strip detectors

In this study,a compact 16-channel integrated charge-sensitive preamplifier named the smart preamplifier(SPA)was developed to support the large-scale detector array used in modern nuclear physics experiments.Two types of SPA,namely SPA02 and SPA03(with external field effect transistor),have been manufactured to match silicon detectors with small and large capacitances,respectively.The characteristics of the SPA include fast response of typically less than 6 ns for pulse rising time and low equivalent noise of 1.5 keV at zero input capacitance.The energy sensitivity and pulse decay time can be easily adjusted by changing the feedback capacitance Cfand resistance Rfin various applications.A good energy resolution of 24.4 keV for 5.803-MeV alpha particles from 244 Cm was achieved using a small-sized Si-PIN detector;for the silicon strip detectors in the test with the alpha source,a typical energy resolution of 0.6–0.8%was achieved.The integrated SPA has been employed in several experiments of silicon strip detectors with hundreds of channels,and a good performance has been realized.

Research and test of the adaptive quadrature demodulation technology for silicon micro-machined gyroscope

A program of adaptive quadrature demodulation is proposed to supply the gaps in the traditional analog detection technology of a silicon micro-machined gyroscope (SMG). This program is suitable for digital phase locked loop (DPLL) drive technology that proposed in other papers. In addition the program adopts an adaptive filtering algorithm, which selects the in-phase and quadrature components that are outputs of the DPLL of the SMG's drive mode as reference signals to update the amplitude of the in-phase and quadrature components of the input signal by iteratively. An objective of the program is to minimize the mean square error of the accurate amplitudes and the estimated amplitudes of SMG's detection mode. The simulation and test results prove the feasibility of the program that lays the foundation for the further improvement of the SMG's system performance and the implementation of the SMG system's self-calibration and self-demarcation in future.

Silicon photonics for telecom and data‐com applications

In recent decades,silicon photonics has attracted much attention in telecom and data-com areas.Constituted of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared spectrum.The main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low cost.On the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in networks.In practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned above.CMOS-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.

Application of millimeter-sized polymer cylindrical lens array concentrators in solar cells

A unique method is proposed to encapsulate solar cells and improve their power conversion efficiency by using a millimeter-sized cylindrical lens array concentrator. Millimeter-sized epoxy resin polymer（ERP） cylindrical lens array concentrators are fabricated by the soft imprint technique based on polydimethylsiloxane stamps. The photovoltaic measurements show that millimeter-sized ERP cylindrical lens array concentrators can considerably improve the power conversion efficiency of silicon solar cells. The validity of the proposed method is proved by the coupled optical and electrical simulations. The designed solar cell devices with the advantages of high-efficiency and convenient cleaning are very useful in practical applications.

Characteristics of bottom gate a-Si TFT array for AM-OLEDs

The authors have fabricated bottom gate amorphous silicon thin film transistor （a-Si TFT） array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/（V.s）, on/off ratio of 7.5×10^6 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface. The present a-Si TFT array with SiNs insulator could be a significant step towards the commercialization of active matrix organic lighting diode （AM-OLED） technology.