期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Dopant atoms as quantum components in silicon nanoscale devices
1
作者 Xiaosong Zhao Weihua Han +5 位作者 Hao Wang Liuhong Ma Xiaoming Li Wang Zhang Wei Yan Fuhua Yang 《Journal of Semiconductors》 EI CAS CSCD 2018年第6期43-50,共8页
Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a sing... Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. 展开更多
关键词 silicon nanoscale devices dopant atoms ionization energy dopant-induced quantum dots quantum transport
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部