Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries:Overcoming Challenges and Real-World Applications

Silicon(Si)has emerged as a potent anode material for lithium-ion batteries(LIBs),but faces challenges like low electrical conductivity and significant volume changes during lithiation/delithiation,leading to material pulverization and capacity degradation.Recent research on nanostructured Si aims to mitigate volume expansion and enhance electrochemical performance,yet still grapples with issues like pulverization,unstable solid electrolyte interface(SEI)growth,and interparticle resistance.This review delves into innovative strategies for optimizing Si anodes’electrochemical performance via structural engineering,focusing on the synthesis of Si/C composites,engineering multidimensional nanostructures,and applying non-carbonaceous coatings.Forming a stable SEI is vital to prevent electrolyte decomposition and enhance Li^(+)transport,thereby stabilizing the Si anode interface and boosting cycling Coulombic efficiency.We also examine groundbreaking advancements such as self-healing polymers and advanced prelithiation methods to improve initial Coulombic efficiency and combat capacity loss.Our review uniquely provides a detailed examination of these strategies in real-world applications,moving beyond theoretical discussions.It offers a critical analysis of these approaches in terms of performance enhancement,scalability,and commercial feasibility.In conclusion,this review presents a comprehensive view and a forward-looking perspective on designing robust,high-performance Si-based anodes the next generation of LIBs.

Regulation of 2-acetyl-1-pyrroline and grain quality in early-season indica fragrant rice by nitrogen and silicon fertilization under different plantation methods

Fragrant rice has a high market value,and it is a popular rice type among consumers owing to its pleasant flavor.Plantation methods,nitrogen(N)fertilizers,and silicon(Si)fertilizers can affect the grain yield and fragrance of fragrant rice.However,the core commercial rice production attributes,namely the head rice yield(HRY)and 2-acetyl-1-pyrroline(2-AP)content of fragrant rice,under various nitrogen and silicon(N-Si)fertilization levels and different plantation methods remain unknown.The field experiment in this study was performed in the early seasons of 2018 and 2019 with two popular indica fragrant rice cultivars(Yuxiangyouzhan and Xiangyaxiangzhan).They were grown under six N-Si fertilization treatments(combinations of two levels of Si fertilizer,0 kg Si ha^(−1)(Si0)and 150 kg Si ha^(−1)(Si1),and three levels of N fertilizer,0 kg N ha^(−1)(N0),150 kg N ha^(−1)(N1),and 220 kg N ha^(−1)(N2))and three plantation methods(artificial transplanting(AT),mechanical transplanting(MT),and mechanical direct-seeding(MD)).The results showed that the N-Si fertilization treatments and all the plantation methods significantly affected the HRY and 2-AP content and related parameters of the two different fragrant rice cultivars.Compared with the Si0N0 treatment,the N-Si fertilization treatments resulted in higher HRY and 2-AP contents.The rates of brown rice,milled rice,head rice,and chalky rice of the fragrant rice also improved with the N-Si fertilization treatments.The N-Si fertilization treatments increased the activities of N metabolism enzymes and the accumulation of N and Si in various parts of the fragrant rice,and affected their antioxidant response parameters.The key parameters for the HRY and 2-AP content were assessed by redundancy analysis.Furthermore,the structural equation model revealed that the Si and N accumulation levels indirectly affected the HRY by affecting the N metabolism enzyme activity,N use efficiency,and grain quality of fragrant rice.Moreover,high N and Si accumulation directly promoted the 2-AP content or affected the antioxidant response parameters and indirectly regulated 2-AP synthesis.The interactions of the MT method with the N-Si fertilization treatments varied in the fragrant rice cultivars in terms of the HRY and 2-AP content,whereas the MD method was beneficial to the 2-AP content in both fragrant rice cultivars under the N-Si fertilization treatments.

Higher-order topological Anderson insulator on the Sierpiński lattice

Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.

The Various Complications Associated with Use of Silicone Oil in Rhegmatogenous Retinal Detachment (RRD) Surgery via Three-Port Vitrectomy (3PV): A Retrospective Study at the Ophthalmology Center of Abass Ndao Hospital

Introduction: RRD (Rhegmatogenous Retinal Detachment) is a separation between the neuroepithelium and the pigment epithelium due to the passage of fluid through a retinal dehiscence. It constitutes a major ophthalmologic emergency. Its management is primarily surgical, either through external or internal approaches, with tamponade using gas or silicone oil. The purpose of this study was to report the various complications associated with the use of silicone oil in vitreoretinal surgery. Patients et methods: We conducted a retrospective, descriptive, and analytical study from October 1, 2020, to October 31, 2023, which included all patients who underwent surgery for RRD using three-port vitrectomy (3PV) with tamponade using 1000 centistoke silicone oil (Group 1) and 5000 centistoke silicone oil (Group 2). All patients underwent a complete ophthalmologic examination and were operated on by the same surgeon. Data analysis was performed using Excel software. Results: Overall, 31 patient files representing 33 eyes were collected, with a mean age of 48.83 years and a sex ratio of 4.16. Group 1 consisted of 16 eyes (48.48%), and Group 2 consisted of 17 eyes (51.51%). The different complications observed were cataracts in all phakic subjects, accounting for 57.57%;ocular hypertonia in 69.69% (27.27% in Group 1;42.42% in Group 2);anterior chamber silicone oil migration in 24.24% (9.09% in Group 1;15.15% in Group 2);recurrence of retinal detachment in 21.21% (6.06% in Group 1;15.15% in Group 2);and silicone oil emulsification in 24.24% (15.15% in Group 1;9.09% in Group 2). Additionally, there was one case of corneal degeneration in Group 1. Conclusion: Silicone oil is an effective tamponade agent used in the treatment of retinal detachments. Close patient follow-up is necessary due to the complications associated with its use, which can occur either early or late after surgery.

Sol-gel synthesis of nanometer silicon/silicon suboxide/carbon anode material

A stacked Si/SiO_(x)/C composite anode material with carbon-coated structure was prepared by sol-gel method combined with carbothermal reduction using organic silicon.The results of X-ray diffractometry, scanning electron microscopy, and elemental analysis show that the Si/SiO_(x)/C material is a secondary particle with a porous micronanostructure, and the presence of nanometer silicon does not affect the carbothermal reduction and carbon coating.Electrochemical test results indicate that the specific capacity and first coulombic efficiency of SiO_(x)/C composite with nanometer silicon can be increased to 1 946.05 mAh/g and 76.49%,respectively.The reversible specific capacity of Si/SiO_(x)/C material blended with graphite is 749.69 mAh/g after 100 cycles at a current density of 0.1 C,and the capacity retention rate is up to 89.03%.Therefore, the composite has excellent electrochemical cycle stability.

Photosynthetic Gas Exchange and Nitrogen Assimilation in Green Bean Plants Supplied with Two Sources of Silicon

Beans contain a wide range of vitamins,proteins,calcium,and zinc which make them an important food source for many countries.To meet the demand for bean production worldwide,large amounts of fertilizers and pesticides are used.However,the cost of production and environmental impact increases.To produce food sustainably,the use of beneficial nutrients such as silicon as a biostimulant has been proposed.However,information about the effect of different sources of silicon on the metabolism of bean plants is scarce.Bean plants cv.Strike were grown in pots for 60 days and the effect of foliar application of silicon nanoparticles and the silicon-based biostimulant Codasilat 4 concentrations(0,1,2,and 4 mM)on total biomass,yield,photosynthetic pigment concentration,photosynthetic activity,stomatal conductance,transpiration rate,chlorophyll fluorescence,and nitrogen assimilation were evaluated.The results obtained showed that the supply of silicon at a dose of 1 mM functioned as a biostimulant,favoring gas exchange and nitrogen assimilation within the plant,which stimulated growth and yield.The results of this research work allowed a better comprehension of the effects of silicon application through silicon nanoparticles and the biostimulant Codasilon the physiology of green bean plants.

Interface and mechanical degradation mechanisms of the silicon anode in sulfide-based solid-state batteries at high temperatures

Silicon(Si)is a competitive anode material owing to its high theoretical capacity and low electrochemical potential.Recently,the prospect of Si anodes in solid-state batteries(SSBs)has been proposed due to less solid electrolyte interphase(SEI)formation and particle pulverization.However,major challenges arise for Si anodes in SSBs at elevated temperatures.In this work,the failure mechanisms of Si-Li_(6)PS_(5)Cl(LPSC)composite anodes above 80℃are thoroughly investigated from the perspectives of interface stability and(electro)chemo-mechanical effect.The chemistry and growth kinetics of Lix Si|LPSC interphase are demonstrated by combining electrochemical,chemical and computational characterizations.Si and/or Si–P compound formed at Lix Si|LPSC interface prove to be detrimental to interface stability at high temperatures.On the other hand,excessive volume expansion and local stress caused by Si lithiation at high temperatures damage the mechanical structure of Si-LPSC composite anodes.This work elucidates the behavior and failure mechanisms of Si-based anodes in SSBs at high temperatures and provides insights into upgrading Si-based anodes for application in SSBs.

Corrective Effect of the Angle of Incidence of the Magnetic Field Intensity on the Performance (Series and Shunt Resistances) of a Bifacial Silicon Solar Cell

This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.

Textured Perovskite/Silicon Tandem Solar Cells Achieving Over 30% Efficiency Promoted by 4-Fluorobenzylamine Hydroiodide

Monolithic textured perovskite/silicon tandem solar cells(TSCs)are expected to achieve maximum light capture at the lowest cost,potentially exhibiting the best power conversion efficiency.However,it is challenging to fabricate high-quality perovskite films and preferred crystal orientation on commercially textured silicon substrates with micrometersize pyramids.Here,we introduced a bulky organic molecule(4-fluorobenzylamine hydroiodide(F-PMAI))as a perovskite additive.It is found that F-PMAI can retard the crystallization process of perovskite film through hydrogen bond interaction between F^(−)and FA^(+)and reduce(111)facet surface energy due to enhanced adsorption energy of F-PMAI on the(111)facet.Besides,the bulky molecular is extruded to the bottom and top of perovskite film after crystal growth,which can passivate interface defects through strong interaction between F-PMA+and undercoordinated Pb^(2+)/I^(−).As a result,the additive facilitates the formation of large perovskite grains and(111)preferred orientation with a reduced trap-state density,thereby promoting charge carrier transportation,and enhancing device performance and stability.The perovskite/silicon TSCs achieved a champion efficiency of 30.05%based on a silicon thin film tunneling junction.In addition,the devices exhibit excellent longterm thermal and light stability without encapsulation.This work provides an effective strategy for achieving efficient and stable TSCs.

A highly sensitive ratiometric near-infrared nanosensor based on erbium-hyperdoped silicon quantum dots for iron(Ⅲ) detection

Ratiometric fluorescent detection of iron(Ⅲ)(Fe^(3+))offers inherent self-calibration and contactless analytic capabilities.However,realizing a dual-emission near-infrared(NIR)nanosensor with a low limit of detection(LOD)is rather challenging.In this work,we report the synthesis of water-dispersible erbium-hyperdoped silicon quantum dots(Si QDs:Er),which emit NIR light at the wavelengths of 810 and 1540 nm.A dual-emission NIR nanosensor based on water-dispersible Si QDs:Er enables ratiometric Fe^(3+)detection with a very low LOD(0.06μM).The effects of pH,recyclability,and the interplay between static and dynamic quenching mechanisms for Fe^(3+)detection have been systematically studied.In addition,we demonstrate that the nanosensor may be used to construct a sequential logic circuit with memory functions.

Modeling and Simulation of Heterojunction Solar Cell with Mono Crystalline Silicon

The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (Voc) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained VOC in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (VOC), the short circuit current (JSC), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).

Determination of the Series Resistance of a Series Vertical-Junction Silicon (N+/P/P+) Solar Cell under Polychromatic Illumination and Magnetic Field: Effect of Optimum Thickness

By solving the magneto-transport equation for excess minority charge carriers in the base of the series vertical-junction silicon cell, the phenomenological parameters of the cell can be determined from the boundary conditions. Photocurrent density and photovoltage are determined for each value of applied magnetic field and corresponding optimum thickness, to establish the current-voltage characteristic (Jph(Sf, Sb, z, B, Hop)-Vph(Sf, Sb, z, B, Hop) of the silicon cell under polychromatic illumination. This study will make it possible to reduce the material used (by reducing the optimum thickness), which will help to lower prices. It will also enable us to reduce betting effects (lower series resistance), thereby boosting solar cell efficiency.

Influence of Carbon Content on Element Diffusion in Silicon Carbide-Based TRISO Composite Fuel

The coating layers of Tri-structural Isotropic Particles(TRISO)serve to protect the kernel and act as barriers to fission products.Sintering aids in the silicon carbide matrix variably react with TRISO coating layers,leading to the destruction of the coating layers.Investigating how carbon content affects element diffusion in silicon carbide-based TRISO composite fuel is of great significance for predicting reactor safety.In this study,silicon carbide-based TRISO composite fuels with different carbon contents were prepared by adding varying amounts of phenolic resin to the silicon carbide matrix.X-ray Diffraction(XRD)and Scanning Electron Microscopy(SEM)were employed to characterize the phase composition,morphology,and microstructure of the composite fuels.The elemental content in each coating layer of TRISO was quantified using Energy-Dispersive X-ray Spectroscopy(EDS).The results demonstrated that the addition of phenolic resin promoted the uniform distribution of sintering aids in the silicon carbide matrix.The atomic percentage(at.%)of aluminum(Al)in the pyrolytic carbon layer of the TRISO particles reached its lowest value of 0.55%when the phenolic resin addition was 1%.This is because the addition of phenolic resin caused the Al and silicon(Si)in the matrix to preferentially react with the carbon in the phenolic resin to form a metastable liquid phase,rather than preferentially consuming the pyrolytic carbon in the outer coating layer of the TRISO particles.The findings suggest that carbon addition through phenolic resin incorporation can effectively mitigate the deleterious reactions between the TRISO coating layers and sintering aids,thereby enhancing the durability and safety of silicon carbide-based TRISO composite fuels.

Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors

The effects of source-drain underlaps on the performance of a top gate silicon nanowire on insulator transistor are studied using a three dimensional(3D) self-consistent Poisson-Schrodinger quantum simulation. Voltage-controlled tunnel barrier is the device transport physics. The off current, the on/off current ratio, and the inverse subthreshold slope are improved while the on current is degraded with underlap. The physics behind this behavior is the modulation of a tunnel barrier with underlap. The underlap primarily affects the tunneling component of drain current. About 50% contribution to the gate capacitance comes from the fringing electric fields emanating from the gate metal to the source and drain. The gate capacitance reduces with underlap, which should reduce the intrinsic switching delay and increase the intrinsic cut-off frequency. However, both the on current and the transconductance reduce with underlap, and the consequence is the increase of delay and the reduction of cut-off frequency.

A new analytical model of high voltage silicon on insulator(SOI) thin film devices

A new analytical model of high voltage silicon on insulator （SOI） thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage （VB,V） are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

In this paper, the effect of floating body effect （FBE） on a single event transient generation mechanism in fully depleted （FD） silicon-on-insulator （SOI） technology is investigated using three-dimensional technology computer-aided design （3D- TCAD） numerical simulation. The results indicate that the main SET generation mechanism is not carder drift/diffusion but floating body effect （FBE） whether for positive or negative channel metal oxide semiconductor （PMOS or NMOS）. Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking （IS） layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.

Design and Fabrication of Ultracompact 3-dB MMI Coupler in Silicon-on-Insulator

An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.Comparing with the conventional straight MMI coupler,the device is ～40% shorter in length.The device exhibits uniformity of 1 3dB and excess loss of 2 5dB.

Preparation, microstructure and dislocation of solar-grade multicrystalline silicon by directional solidification from metallurgical-grade silicon

A vacuum directional solidification with high temperature gradient was performed to prepare low cost solar-grade multicrystalline silicon （mc-Si） directly from metallurgical-grade mc-Si. The microstructure characteristic, grain size, boundary, solid-liquid growth interface, and dislocation structure under different growth conditions were studied. The results show that directionally solidified multicrystalline silicon rods with high density and orientation can be obtained when the solidification rate is below 60 μm/s. The grain size gradually decreases with increasing the solidification rate. The control of obtaining planar solid-liquid interface at high temperature gradient is effective to produce well-aligned columnar grains along the solidification direction. The growth step and twin boundaries are preferred to form in the microstructure due to the faceted growth characteristic of mc-Si. The dislocation distribution is inhomogeneous within crystals and the dislocation density increases with the increase of solidification rate. Furthermore, the crystal growth behavior and dislocation formation mechanism of mc-Si were discussed.

THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM

An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.