在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封...在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封装结构;利用ANSYS软件对敏感芯片进行了力学仿真,对高温敏感芯体进行了热应力分析,完成了无引线封装结构的优化及制作。通过性能测试,该传感器测量范围为0~0.2 MPa,灵敏度为55.0 m V/MPa,非线性误差小于0.2%。展开更多
Utilizing a high-Q microdisk resonator （MDR） on a single silicon-on-insulator （SOI） chip, a compact microwave photonic filter （MPF） with a continuously tunable central frequency is proposed and experimentally de...Utilizing a high-Q microdisk resonator （MDR） on a single silicon-on-insulator （SOI） chip, a compact microwave photonic filter （MPF） with a continuously tunable central frequency is proposed and experimentally demonstrated. Assisted by the optical single side-band （OSSB） modulation, the optical frequency response of the MDR is mapped to the microwave frequency response to form an MPF with a continuously tunable central frequency and a narrow 3-dB bandwidth. In the experiment, using an MDR with a compact size of 20×20 μm^2 and a high Q factor of 1.07×10^5, we obtain a compact MPF with a high rejection ratio of about 40 dB, a 3-dB bandwidth of about 2 GHz, and a frequency tuning range larger than 12 GHz. Our approach may allow the implementation of very compact, low-cost, low-consumption, and integrated notch MPF in a silicon chip.展开更多
文摘在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封装结构;利用ANSYS软件对敏感芯片进行了力学仿真,对高温敏感芯体进行了热应力分析,完成了无引线封装结构的优化及制作。通过性能测试,该传感器测量范围为0~0.2 MPa,灵敏度为55.0 m V/MPa,非线性误差小于0.2%。
基金supported by the National Basic Research Program of China(Grant No.2011CB301704)the Program for New Century Excellent Talents in Ministry of Education of China(Grant No.NCET-11-0168)+1 种基金the Foundation for the Author of National Excellent Doctoral Dissertation of China(Grant No.201139)the National Natural Science Foundation of China(Grant Nos.60901006 and 11174096)
文摘Utilizing a high-Q microdisk resonator （MDR） on a single silicon-on-insulator （SOI） chip, a compact microwave photonic filter （MPF） with a continuously tunable central frequency is proposed and experimentally demonstrated. Assisted by the optical single side-band （OSSB） modulation, the optical frequency response of the MDR is mapped to the microwave frequency response to form an MPF with a continuously tunable central frequency and a narrow 3-dB bandwidth. In the experiment, using an MDR with a compact size of 20×20 μm^2 and a high Q factor of 1.07×10^5, we obtain a compact MPF with a high rejection ratio of about 40 dB, a 3-dB bandwidth of about 2 GHz, and a frequency tuning range larger than 12 GHz. Our approach may allow the implementation of very compact, low-cost, low-consumption, and integrated notch MPF in a silicon chip.
