Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline s...Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2. the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3×104Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.展开更多
研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 ...研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 m A条件下满量程输出信号达到100 m V以上,非线性小于0.15%FS,压力迟滞小于0.05%FS。在-55^+150℃温度范围内,零点温度系数小于20μV/℃,灵敏度温度系数小于0.02%FS/℃,零点温度迟滞小于0.1%FS。将芯片样本在150℃环境下进行了短期零点时漂测试验证其稳定性,结果优于0.05%FS。展开更多
在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封...在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封装结构;利用ANSYS软件对敏感芯片进行了力学仿真,对高温敏感芯体进行了热应力分析,完成了无引线封装结构的优化及制作。通过性能测试,该传感器测量范围为0~0.2 MPa,灵敏度为55.0 m V/MPa,非线性误差小于0.2%。展开更多
基金Supported by Science and Technology Development Foundation of Shanghai under Grant (No.98JC14004) partly by National Natural
文摘Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2. the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3×104Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.
文摘研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 m A条件下满量程输出信号达到100 m V以上,非线性小于0.15%FS,压力迟滞小于0.05%FS。在-55^+150℃温度范围内,零点温度系数小于20μV/℃,灵敏度温度系数小于0.02%FS/℃,零点温度迟滞小于0.1%FS。将芯片样本在150℃环境下进行了短期零点时漂测试验证其稳定性,结果优于0.05%FS。
文摘在SOI晶圆材料的基础上,设计了压力敏感结构,提高了传感器的高温稳定性;采用敏感芯片背孔引线技术,将硅敏感芯片的正面和硼玻璃进行气密性阳极键合,通过在硼玻璃对应位置加工电极连接孔,实现芯片电极与外部管脚的电气连接,形成无引线封装结构;利用ANSYS软件对敏感芯片进行了力学仿真,对高温敏感芯体进行了热应力分析,完成了无引线封装结构的优化及制作。通过性能测试,该传感器测量范围为0~0.2 MPa,灵敏度为55.0 m V/MPa,非线性误差小于0.2%。
