Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent pr...Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot （QD） lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self- organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength （〉 1.3 μm） QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.展开更多
This article covers laser configurations, design and experiments of photonic microelectromechanical systems （MEMS） tunable laser sources. Three different types of MEMS tunable lasers such as MEMS coupled-cavity lase...This article covers laser configurations, design and experiments of photonic microelectromechanical systems （MEMS） tunable laser sources. Three different types of MEMS tunable lasers such as MEMS coupled-cavity lasers, injection-locked laser systems and dual-wavelength tunable lasers are demonstrated as examples of natural synergy of MEMS with photonics. The expansion and penetration of the MEMS technology to silicon optoelectronic creates on-chip optical systems at an unprecedented scale of integration. While producing better integration with robustness and compactness, MEMS improves the functionalities and specifications of laser chips. Additionally, MEMS tunable lasers are featured with small size, high tuning speed, wide tuning range and CMOS compatible integration, which broaden their applications to many fields.展开更多
基金the Defense Advanced Research Projects Agency of the United States under Grant No.W911NF-04-1-0429
文摘Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot （QD） lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self- organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength （〉 1.3 μm） QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.
文摘This article covers laser configurations, design and experiments of photonic microelectromechanical systems （MEMS） tunable laser sources. Three different types of MEMS tunable lasers such as MEMS coupled-cavity lasers, injection-locked laser systems and dual-wavelength tunable lasers are demonstrated as examples of natural synergy of MEMS with photonics. The expansion and penetration of the MEMS technology to silicon optoelectronic creates on-chip optical systems at an unprecedented scale of integration. While producing better integration with robustness and compactness, MEMS improves the functionalities and specifications of laser chips. Additionally, MEMS tunable lasers are featured with small size, high tuning speed, wide tuning range and CMOS compatible integration, which broaden their applications to many fields.
