Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Poly-Silicon Micromachined Switch

By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.

Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide

We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.

Sub-nanosecond optical switch based on silicon racetrack resonator

We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2 × 10-3 mm^2. Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

A New Type of Fiber-induced Optically Controllable Silicon-loaded Millimeter Waveguide Switch

In this paper,a new type of optically controllable silicon slab loaded E-plane millimeterwave rectangular waveguide switch is presented.It uses SELFOC lens to couple optical puls-es to silicon slab with optical fiber.The on/off ratio reaches 42dB,the front fringe of suchkind swith is less than 0.05μs,and the insertion loss is less than 1dB in the full band of 26.5GHz to 40GHz.

Strictly non-blocking 4×4 silicon electro–optic switch matrix

The first path-independent insertion-loss（PILOSS） strictly non-blocking 4×4 silicon electro–optic switch matrix is reported. The footprint of this switch matrix is only 4.6 mm×1.0 mm. Using single-arm modulation, the crosstalk measured in this test is-13 dB --27 dB. And a maximum crosstalk deterioration of 6d B caused by two-path interference is also found.

Symmetry-broken silicon disk array as an efficient terahertz switch working with ultra-low optical pump power

The advancement of terahertz technology in recent years and its applications in various fields lead to an urgent need for functional terahertz components,among which a terahertz switch is one example of the most importance because it provides an effective interface between terahertz signals and information in another physical quantity.To date many types of terahertz switches have been investigated mainly in the form of metamaterials made from metallic structures and optically-active medium.However,these reported terahertz switches usually suffer from an inferior performance,e.g.,requiring a high pump laser power density due to a low quality factor of the metallic metamaterial resonances.In this paper,we report and numerically investigate a symmetry-broken silicon disk based terahertz resonator array which exhibits one resonance with ultrahigh quality factor for normal incidence of the terahertz radiations.This resonance,which can never be excited for regular circular Si disks,can help to realize a superior terahertz switch with which only an ultra-low optical pump power density is required to modify the free carrier concentration in Si and its refractive index in the terahertz band.Our findings demonstrate that to realize a high terahertz transmittance change from 0 to above 50%,the required optical pump power density is more than 3 orders of magnitude smaller than that required for a split-ring resonator(SRR)based terahertz switch reported in the literature.

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer （MZI） based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator （SOI）. The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a VπLπ figure of merit of 0.145 V.cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

SiC MOSFET开关瞬态解析建模综述

在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)可以应用于更高开关速度,其开关瞬态特性更为复杂,开关瞬态解析建模也更加困难。该文总结现有的针对SiC MOSFET与二极管换流对的开关瞬态解析建模方法,在建模过程中依次引入各种简化假设,按照简化程度由低到高的顺序,梳理解析建模的逐步简化过程。通过对比,评估各模型的优缺点以及适用场合,对其中准确性、实用性都较强的分段线性模型进行详细介绍;之后,对开关瞬态建模中关键参数的建模方法进行总结与评价;最后,指出现有SiC MOSFET开关瞬态解析模型中存在的问题,并对其未来发展给出建议。

一种基于Si/SiC级联H桥逆变器的高性能模型预测控制方法

Si/SiC级联H桥逆变器,能够利用不同器件的开关组合保证低输出电流谐波畸变率(Total Harmonic Distortion,THD)和装置效率,但也带来了Si/SiC子模块开关分配的难题.对此,本论文设计一种变权重的模型预测控制方法(Model Predictive Control,MPC)选择总开关状态并分配子模块开关组合.该方法在选取逆变器总开关状态和Si/SiC子模块开关组合的代价函数中引入基于器件开关损耗的变权重,以改善逆变器的效率和输出电流谐波畸变率.在五电平Si/SiC级联H桥逆变装置上验证了变权重MPC的有效性,相比于固定权重MPC,输出电流THD最多降低2.05%,装置损耗最多降低4.53%.

基于碳化硅电源的双芯智能电能表的可靠性测试研究

基于碳化硅电源的双芯智能电能表是新技术在工程领域特别是电力行业的重要尝试。针对其缺少可靠性检测标准的问题,文中根据现有智能电能表运行环境,同时结合碳化硅开关电源和双芯智能电能表特点,通过对电能表各项应力分析,提出了其可靠性检测方案及相应具体方法。提出的检测方案对于确定基于碳化硅开关电源的双芯智能电能表整机的可靠性指标具有十分重要的指导意义,从而实现提升智能电网技术水平,保障电网安全稳定运行的目的。

SiC MOSFET测试系统设计与开关特性分析

以碳化硅金属-氧化物半导体场效应晶体管(SiC MOSFET)为代表的第3代半导体功率器件因其优异的开关特性,在新能源等领域被广泛应用,但面对高速开关耦合寄生参数所产生的负面效应,使得测试系统难以快速、准确评估其开关瞬态等相关参数。首先,根据改进的双脉冲模型设计了一种高精度测试系统,硬件主要包括功率测试板、集成脉冲发生器的控制板及驱动板,软件主要利用Keil编写控制板程序,LabVIEW进行用户界面设计。其次,还探讨了电压和电流测量技术、连接技术和测量数据的处理,并且结合器件数据手册及仿真结果分析实测结果,表明该系统测量误差小,量程大,抗干扰能力强,可信度高,能为优化第3代半导体器件和驱动电路的设计和应用提供有益支持。

一种考虑复合电流的SiC LBJT行为模型改进

介绍了一种考虑基区SiC/SiO2界面处复合电流的SiC LBJT改进模型。分析了横向碳化硅双极结型晶体管与其垂直结构之间的区别,将横向BJT的外延层和半绝缘机构等效为衬底电容。再引入一个平行于SiC BJT基极结的附加二极管来描述复合电流,以垂直SiC BJT的SGP模型为基础建立SiC LBJT行为模型。校准了LBJT模型的基区渡越时间,模型与实际器件的开关特性接近吻合。相较于未考虑复合电流的LBJT模型,改进后的模型输出特性曲线与实测数据精度误差较小。该模型可以较精确地描述受复合电流影响的LBJT器件行为。

硅基集成光开关阵列的高速驱动控制电路设计

通过分析光开关单元的物理结构,提出等效电学模型,用于模拟光开关单元的瞬态响应.基于该模型,针对光开关阵列设计高速驱动控制电路,结合仿真探究电压尖峰对光开关单元瞬态响应的影响.系统测试结果表明,驱动电路施加的电压信号的上升/下降时间为1.7/1.6 ns,能够满足高速光开关纳秒级切换速度的需求.在该驱动电路的配合下,光开关阵列的切换时间为2.1~5.9 ns,实现了较先进的高速光交换系统.

SiC光导开关欧姆接触制备与性能研究

Ni/W膜层作为SiC光导开关的欧姆接触膜系,具有接触电阻低、热稳定性好、抗烧蚀能力强等优良性能。通过接触势垒分析、难熔金属选择、欧姆接触膜系优化、热稳定性以及抗烧蚀性能的研究,优选出W膜层作为难熔金属的最佳膜层,此时击穿电压达到了23 kV,Ni/W膜层厚度为100 nm/100 nm~100 nm/150 nm时,比接触电阻率降低到1.6×10^(-4)Ω·cm^(2),且在后续试验验证中,Ni/W膜层表现出良好的高温稳定性及抗大电流烧蚀性能。

Silicon nanophotonics for on-chip light manipulation

The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages,including complementary metal–oxide–semiconductor（CMOS） compatibility and the ability to achieve an ultra-high integration density. In particular, silicon nanophotonic integrated devices for on-chip light manipulation have been developed successfully and have played very import roles in various applications. In this paper, we review the recent progress of silicon nanophotonic devices for on-chip light manipulation, including the static type and the dynamic type. Static onchip light manipulation focuses on polarization/mode manipulation, as well as light nanofocusing, while dynamic on-chip light manipulation focuses on optical modulation/switching. The challenges and prospects of high-performance silicon nanophotonic integrated devices for on-chip light manipulation are discussed.

Silicon photonics for telecom and data‐com applications

In recent decades,silicon photonics has attracted much attention in telecom and data-com areas.Constituted of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared spectrum.The main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low cost.On the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in networks.In practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned above.CMOS-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.

用于SiC MOSFET开关电压测量的非接触式电场耦合电压传感器

准确测量碳化硅(silicon carbide,SiC)金属–氧化物半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)开关电压是评估SiC MOSFET开关特性、计算开关损耗、优化变换器设计的关键。随着SiC MOSFET开关速度、耐压及功率密度的提升,开关电压测量难的问题逐渐凸显,因此对电压传感器的带宽、耐压和侵入性提出了新的要求。该文以SiC MOSFET的开关电压为研究对象,根据目前开关电压的测量需求,提出一种利用电场耦合原理测量开关电压的非接触式电压传感器,并设计混合积分电路对传感器输出信号进行电压重构。在此基础上,通过仿真和计算着重分析电场耦合电压传感器的结构和电路参数的设计依据。传感器带宽范围为5Hz~260MHz,量程为-1000~+1000V,输入电容约为0.73pF,最后利用双脉冲测试,将其与商用示波器探头的测量结果进行对比,验证电场耦合电压传感器的准确性。

10kV高压SiC GTO模块的研制

文中提出一款基于自主设计的尺寸为8mm×8mm的10kV碳化硅(silicon carbide,SiC)门极可关断晶闸管(gate-turn-off thyristor,GTO)单芯片封装的焊接式模块。详细介绍10kV SiC GTO模块的设计与制造工艺,通过对比裸芯片与封装后模块在10.5kV阻断电压下的漏电流,验证模块绝缘设计冗余和封装工艺,对模块的动态、静态、极限过流能力、关断增益等性能进行测试并给出初步测试结果。